GB1576495A - Photovoltaic cells - Google Patents
Photovoltaic cells Download PDFInfo
- Publication number
- GB1576495A GB1576495A GB13435/77A GB1343577A GB1576495A GB 1576495 A GB1576495 A GB 1576495A GB 13435/77 A GB13435/77 A GB 13435/77A GB 1343577 A GB1343577 A GB 1343577A GB 1576495 A GB1576495 A GB 1576495A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- cell
- cadmium telluride
- temperature
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010438 heat treatment Methods 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 24
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 19
- 230000004888 barrier function Effects 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 26
- 239000010410 layer Substances 0.000 description 25
- 239000000463 material Substances 0.000 description 25
- 230000001590 oxidative effect Effects 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000003708 ampul Substances 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 3
- 229910052794 bromium Inorganic materials 0.000 description 3
- 238000004320 controlled atmosphere Methods 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- -1 Cd Te Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 238000009388 chemical precipitation Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000007620 mathematical function Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000001706 oxygenating effect Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/18—Photovoltaic cells having only Schottky potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/671,866 US4035197A (en) | 1976-03-30 | 1976-03-30 | Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1576495A true GB1576495A (en) | 1980-10-08 |
Family
ID=24696186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB13435/77A Expired GB1576495A (en) | 1976-03-30 | 1977-03-30 | Photovoltaic cells |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4035197A (enExample) |
| JP (1) | JPS52119882A (enExample) |
| AU (1) | AU508168B2 (enExample) |
| CA (1) | CA1067609A (enExample) |
| DE (1) | DE2713912A1 (enExample) |
| FR (1) | FR2346861A1 (enExample) |
| GB (1) | GB1576495A (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4139857A (en) * | 1975-07-18 | 1979-02-13 | Futaba Denshi Kogyo Kabushiki Kaisha | Schottky barrier type solid-state element |
| US4149907A (en) * | 1977-07-07 | 1979-04-17 | Rca Corporation | Method of making camera tube target by modifying Schottky barrier heights |
| GB1605321A (en) * | 1978-03-31 | 1989-07-19 | Philips Electronic Associated | Thermal radiation imaging devices and systems |
| US4207119A (en) * | 1978-06-02 | 1980-06-10 | Eastman Kodak Company | Polycrystalline thin film CdS/CdTe photovoltaic cell |
| JPS5536950A (en) * | 1978-09-05 | 1980-03-14 | Fuji Photo Film Co Ltd | Manufacturing of thin film photocell |
| US4213798A (en) * | 1979-04-27 | 1980-07-22 | Rca Corporation | Tellurium schottky barrier contact for amorphous silicon solar cells |
| US4260427A (en) * | 1979-06-18 | 1981-04-07 | Ametek, Inc. | CdTe Schottky barrier photovoltaic cell |
| US4345107A (en) * | 1979-06-18 | 1982-08-17 | Ametek, Inc. | Cadmium telluride photovoltaic cells |
| GB2207801B (en) * | 1979-07-30 | 1989-05-24 | Secr Defence | Thermal imaging devices |
| JPS5685874A (en) * | 1979-12-14 | 1981-07-13 | Agency Of Ind Science & Technol | Solar battery consisting of cadmium telluride sintered film |
| US4319258A (en) * | 1980-03-07 | 1982-03-09 | General Dynamics, Pomona Division | Schottky barrier photovoltaic detector |
| US4315096A (en) * | 1980-07-25 | 1982-02-09 | Eastman Kodak Company | Integrated array of photovoltaic cells having minimized shorting losses |
| US4388483A (en) * | 1981-09-08 | 1983-06-14 | Monosolar, Inc. | Thin film heterojunction photovoltaic cells and methods of making the same |
| US4977097A (en) * | 1986-10-21 | 1990-12-11 | Ametek, Inc. | Method of making heterojunction P-I-N photovoltaic cell |
| US4710589A (en) * | 1986-10-21 | 1987-12-01 | Ametek, Inc. | Heterojunction p-i-n photovoltaic cell |
| US4850864A (en) * | 1987-03-30 | 1989-07-25 | Diamond Michael K | Bracket placing instrument |
| US4836012A (en) * | 1988-05-26 | 1989-06-06 | Ametek, Inc. | Gas sensor |
| US5501744A (en) * | 1992-01-13 | 1996-03-26 | Photon Energy, Inc. | Photovoltaic cell having a p-type polycrystalline layer with large crystals |
| GB2384621B (en) * | 2002-01-29 | 2004-07-07 | Univ Sheffield Hallam | Thin film photovoltaic devices and methods of making the same |
| US20080128020A1 (en) * | 2006-11-30 | 2008-06-05 | First Solar, Inc. | Photovoltaic devices including a metal stack |
| US20110048493A1 (en) * | 2009-09-02 | 2011-03-03 | Electronics And Telecommunications Research Institute | Solar cell |
| US20110272010A1 (en) * | 2010-05-10 | 2011-11-10 | International Business Machines Corporation | High work function metal interfacial films for improving fill factor in solar cells |
| WO2012106433A2 (en) * | 2011-02-01 | 2012-08-09 | University Of South Florida | A partially-sprayed layer organic solar photovoltaic cell using a self-assembled monolayer and method of manufacture |
| US9608144B2 (en) | 2011-06-01 | 2017-03-28 | First Solar, Inc. | Photovoltaic devices and method of making |
| US8912037B2 (en) | 2011-07-28 | 2014-12-16 | First Solar, Inc. | Method for making photovoltaic devices using oxygenated semiconductor thin film layers |
| WO2014145609A1 (en) | 2013-03-15 | 2014-09-18 | University Of South Florida | Mask-stack-shift method to fabricate organic solar array by spray |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3703408A (en) * | 1969-05-21 | 1972-11-21 | Texas Instruments Inc | Photosensitive semiconductor device |
| JPS5118155B1 (enExample) * | 1970-08-17 | 1976-06-08 | ||
| BE789331A (fr) * | 1971-09-28 | 1973-01-15 | Communications Satellite Corp | Cellule solaire a geometrie fine |
| US3888697A (en) * | 1971-10-23 | 1975-06-10 | Licentia Gmbh | Photocell |
| US3769558A (en) * | 1971-12-03 | 1973-10-30 | Communications Satellite Corp | Surface inversion solar cell and method of forming same |
-
1976
- 1976-03-30 US US05/671,866 patent/US4035197A/en not_active Expired - Lifetime
- 1976-11-12 CA CA265,508A patent/CA1067609A/en not_active Expired
-
1977
- 1977-03-28 FR FR7709125A patent/FR2346861A1/fr active Granted
- 1977-03-29 DE DE19772713912 patent/DE2713912A1/de not_active Withdrawn
- 1977-03-30 AU AU23774/77A patent/AU508168B2/en not_active Expired
- 1977-03-30 JP JP3480877A patent/JPS52119882A/ja active Pending
- 1977-03-30 GB GB13435/77A patent/GB1576495A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA1067609A (en) | 1979-12-04 |
| US4035197A (en) | 1977-07-12 |
| JPS52119882A (en) | 1977-10-07 |
| AU508168B2 (en) | 1980-03-13 |
| FR2346861A1 (fr) | 1977-10-28 |
| DE2713912A1 (de) | 1977-10-13 |
| FR2346861B1 (enExample) | 1978-11-03 |
| AU2377477A (en) | 1978-10-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |