FR2346861B1 - - Google Patents

Info

Publication number
FR2346861B1
FR2346861B1 FR7709125A FR7709125A FR2346861B1 FR 2346861 B1 FR2346861 B1 FR 2346861B1 FR 7709125 A FR7709125 A FR 7709125A FR 7709125 A FR7709125 A FR 7709125A FR 2346861 B1 FR2346861 B1 FR 2346861B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7709125A
Other languages
French (fr)
Other versions
FR2346861A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of FR2346861A1 publication Critical patent/FR2346861A1/fr
Application granted granted Critical
Publication of FR2346861B1 publication Critical patent/FR2346861B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18—Photovoltaic cells having only Schottky potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
FR7709125A 1976-03-30 1977-03-28 Nouveau capteur photovoltaique et procede pour sa fabrication Granted FR2346861A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/671,866 US4035197A (en) 1976-03-30 1976-03-30 Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture

Publications (2)

Publication Number Publication Date
FR2346861A1 FR2346861A1 (fr) 1977-10-28
FR2346861B1 true FR2346861B1 (enExample) 1978-11-03

Family

ID=24696186

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7709125A Granted FR2346861A1 (fr) 1976-03-30 1977-03-28 Nouveau capteur photovoltaique et procede pour sa fabrication

Country Status (7)

Country Link
US (1) US4035197A (enExample)
JP (1) JPS52119882A (enExample)
AU (1) AU508168B2 (enExample)
CA (1) CA1067609A (enExample)
DE (1) DE2713912A1 (enExample)
FR (1) FR2346861A1 (enExample)
GB (1) GB1576495A (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4139857A (en) * 1975-07-18 1979-02-13 Futaba Denshi Kogyo Kabushiki Kaisha Schottky barrier type solid-state element
US4149907A (en) * 1977-07-07 1979-04-17 Rca Corporation Method of making camera tube target by modifying Schottky barrier heights
GB1605321A (en) * 1978-03-31 1989-07-19 Philips Electronic Associated Thermal radiation imaging devices and systems
US4207119A (en) * 1978-06-02 1980-06-10 Eastman Kodak Company Polycrystalline thin film CdS/CdTe photovoltaic cell
JPS5536950A (en) * 1978-09-05 1980-03-14 Fuji Photo Film Co Ltd Manufacturing of thin film photocell
US4213798A (en) * 1979-04-27 1980-07-22 Rca Corporation Tellurium schottky barrier contact for amorphous silicon solar cells
US4260427A (en) * 1979-06-18 1981-04-07 Ametek, Inc. CdTe Schottky barrier photovoltaic cell
US4345107A (en) * 1979-06-18 1982-08-17 Ametek, Inc. Cadmium telluride photovoltaic cells
GB2207801B (en) * 1979-07-30 1989-05-24 Secr Defence Thermal imaging devices
JPS5685874A (en) * 1979-12-14 1981-07-13 Agency Of Ind Science & Technol Solar battery consisting of cadmium telluride sintered film
US4319258A (en) * 1980-03-07 1982-03-09 General Dynamics, Pomona Division Schottky barrier photovoltaic detector
US4315096A (en) * 1980-07-25 1982-02-09 Eastman Kodak Company Integrated array of photovoltaic cells having minimized shorting losses
US4388483A (en) * 1981-09-08 1983-06-14 Monosolar, Inc. Thin film heterojunction photovoltaic cells and methods of making the same
US4977097A (en) * 1986-10-21 1990-12-11 Ametek, Inc. Method of making heterojunction P-I-N photovoltaic cell
US4710589A (en) * 1986-10-21 1987-12-01 Ametek, Inc. Heterojunction p-i-n photovoltaic cell
US4850864A (en) * 1987-03-30 1989-07-25 Diamond Michael K Bracket placing instrument
US4836012A (en) * 1988-05-26 1989-06-06 Ametek, Inc. Gas sensor
US5501744A (en) * 1992-01-13 1996-03-26 Photon Energy, Inc. Photovoltaic cell having a p-type polycrystalline layer with large crystals
GB2384621B (en) * 2002-01-29 2004-07-07 Univ Sheffield Hallam Thin film photovoltaic devices and methods of making the same
US20080128020A1 (en) * 2006-11-30 2008-06-05 First Solar, Inc. Photovoltaic devices including a metal stack
US20110048493A1 (en) * 2009-09-02 2011-03-03 Electronics And Telecommunications Research Institute Solar cell
US20110272010A1 (en) * 2010-05-10 2011-11-10 International Business Machines Corporation High work function metal interfacial films for improving fill factor in solar cells
WO2012106433A2 (en) * 2011-02-01 2012-08-09 University Of South Florida A partially-sprayed layer organic solar photovoltaic cell using a self-assembled monolayer and method of manufacture
US9608144B2 (en) 2011-06-01 2017-03-28 First Solar, Inc. Photovoltaic devices and method of making
US8912037B2 (en) 2011-07-28 2014-12-16 First Solar, Inc. Method for making photovoltaic devices using oxygenated semiconductor thin film layers
WO2014145609A1 (en) 2013-03-15 2014-09-18 University Of South Florida Mask-stack-shift method to fabricate organic solar array by spray

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3703408A (en) * 1969-05-21 1972-11-21 Texas Instruments Inc Photosensitive semiconductor device
JPS5118155B1 (enExample) * 1970-08-17 1976-06-08
BE789331A (fr) * 1971-09-28 1973-01-15 Communications Satellite Corp Cellule solaire a geometrie fine
US3888697A (en) * 1971-10-23 1975-06-10 Licentia Gmbh Photocell
US3769558A (en) * 1971-12-03 1973-10-30 Communications Satellite Corp Surface inversion solar cell and method of forming same

Also Published As

Publication number Publication date
CA1067609A (en) 1979-12-04
US4035197A (en) 1977-07-12
JPS52119882A (en) 1977-10-07
AU508168B2 (en) 1980-03-13
FR2346861A1 (fr) 1977-10-28
DE2713912A1 (de) 1977-10-13
GB1576495A (en) 1980-10-08
AU2377477A (en) 1978-10-05

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Legal Events

Date Code Title Description
ST Notification of lapse