GB1573826A - Radiation triggered thyristor - Google Patents
Radiation triggered thyristor Download PDFInfo
- Publication number
- GB1573826A GB1573826A GB20994/77A GB2099477A GB1573826A GB 1573826 A GB1573826 A GB 1573826A GB 20994/77 A GB20994/77 A GB 20994/77A GB 2099477 A GB2099477 A GB 2099477A GB 1573826 A GB1573826 A GB 1573826A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor layer
- electrode
- thyristor
- resistor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000001960 triggered effect Effects 0.000 title claims description 14
- 230000005855 radiation Effects 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 90
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000009966 trimming Methods 0.000 description 10
- 238000001465 metallisation Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
- H10F30/263—Photothyristors
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/687,986 US4053922A (en) | 1976-05-19 | 1976-05-19 | Light triggered thyristor having controlled turn on delay |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1573826A true GB1573826A (en) | 1980-08-28 |
Family
ID=24762654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB20994/77A Expired GB1573826A (en) | 1976-05-19 | 1977-05-18 | Radiation triggered thyristor |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4053922A (cg-RX-API-DMAC10.html) |
| JP (2) | JPS52152180A (cg-RX-API-DMAC10.html) |
| AR (1) | AR211964A1 (cg-RX-API-DMAC10.html) |
| BR (1) | BR7703262A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2722517A1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2352405A1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1573826A (cg-RX-API-DMAC10.html) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH622127A5 (cg-RX-API-DMAC10.html) * | 1977-12-21 | 1981-03-13 | Bbc Brown Boveri & Cie | |
| US4318115A (en) * | 1978-07-24 | 1982-03-02 | Sharp Kabushiki Kaisha | Dual junction photoelectric semiconductor device |
| DE2855265A1 (de) * | 1978-12-21 | 1980-07-10 | Bbc Brown Boveri & Cie | Thyristor |
| EP0240690B1 (de) * | 1986-03-05 | 1991-04-10 | Siemens Aktiengesellschaft | Thyristor mit einstellbarem Basis-Emitter-Widerstand |
| US6154477A (en) * | 1997-05-13 | 2000-11-28 | Berkeley Research Associates, Inc. | On-board laser-triggered multi-layer semiconductor power switch |
| US8536617B2 (en) * | 2011-12-16 | 2013-09-17 | General Electric Company | Optically triggered semiconductor device and method for making the same |
| US9142692B2 (en) * | 2012-07-23 | 2015-09-22 | Bae Systems Information And Electronic Systems Integration Inc. | Thyristor-based, dual-polarity blocking photo-conductive semiconductor switch (PCSS) for short pulse switching and methods |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE344386B (cg-RX-API-DMAC10.html) * | 1968-04-17 | 1972-04-10 | Hitachi Ltd | |
| JPS508315B1 (cg-RX-API-DMAC10.html) * | 1970-02-20 | 1975-04-03 | ||
| US3914783A (en) * | 1971-10-01 | 1975-10-21 | Hitachi Ltd | Multi-layer semiconductor device |
| JPS4860589A (cg-RX-API-DMAC10.html) * | 1971-11-29 | 1973-08-24 | ||
| DE2256688B2 (de) * | 1972-11-18 | 1976-05-06 | Robert Bosch Gmbh, 7000 Stuttgart | Verfahren zum auftrennen von leiterbahnen auf integrierten schaltkreisen |
| US3969752A (en) * | 1973-12-03 | 1976-07-13 | Power Hybrids, Inc. | Hybrid transistor |
| US3893153A (en) * | 1974-01-10 | 1975-07-01 | Westinghouse Electric Corp | Light activated thyristor with high di/dt capability |
| US3990092A (en) * | 1974-01-11 | 1976-11-02 | Hitachi, Ltd. | Resistance element for semiconductor integrated circuit |
| US3922708A (en) * | 1974-03-04 | 1975-11-25 | Ibm | Method of producing high value ion implanted resistors |
| US4012761A (en) * | 1976-04-19 | 1977-03-15 | General Electric Company | Self-protected semiconductor device |
-
1976
- 1976-05-19 US US05/687,986 patent/US4053922A/en not_active Expired - Lifetime
-
1977
- 1977-04-22 AR AR267318A patent/AR211964A1/es active
- 1977-05-18 FR FR7715343A patent/FR2352405A1/fr active Granted
- 1977-05-18 DE DE19772722517 patent/DE2722517A1/de active Granted
- 1977-05-18 GB GB20994/77A patent/GB1573826A/en not_active Expired
- 1977-05-18 JP JP5648877A patent/JPS52152180A/ja active Pending
- 1977-05-20 BR BR3262/77A patent/BR7703262A/pt unknown
-
1985
- 1985-05-20 JP JP1985073624U patent/JPS611857U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2352405A1 (fr) | 1977-12-16 |
| DE2722517A1 (de) | 1977-12-08 |
| US4053922A (en) | 1977-10-11 |
| JPS52152180A (en) | 1977-12-17 |
| JPH0220849Y2 (cg-RX-API-DMAC10.html) | 1990-06-06 |
| JPS611857U (ja) | 1986-01-08 |
| DE2722517C2 (cg-RX-API-DMAC10.html) | 1990-12-06 |
| AR211964A1 (es) | 1978-04-14 |
| FR2352405B1 (cg-RX-API-DMAC10.html) | 1982-06-04 |
| BR7703262A (pt) | 1978-02-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4779126A (en) | Optically triggered lateral thyristor with auxiliary region | |
| JP2813869B2 (ja) | ブレークオーバ電圧によりトリガされる２端子半導体モノリシック回路 | |
| US3740621A (en) | Transistor employing variable resistance ballasting means dependent on the magnitude of the emitter current | |
| US3596347A (en) | Method of making insulated gate field effect transistors using ion implantation | |
| US3970843A (en) | Photosensitive junction devices having controllable sensitivity | |
| US3476992A (en) | Geometry of shorted-cathode-emitter for low and high power thyristor | |
| GB1579938A (en) | Semiconductor devices | |
| US4053922A (en) | Light triggered thyristor having controlled turn on delay | |
| US4231059A (en) | Technique for controlling emitter ballast resistance | |
| US3622845A (en) | Scr with amplified emitter gate | |
| US4047219A (en) | Radiation sensitive thyristor structure with isolated detector | |
| US4060825A (en) | High speed high power two terminal solid state switch fired by dV/dt | |
| US4054893A (en) | Semiconductor switching devices utilizing nonohmic current paths across P-N junctions | |
| US3914782A (en) | Reverse conducting thyristor and process for producing the same | |
| US4208669A (en) | Controllable semiconductor rectifier with interference potential compensation | |
| US4195306A (en) | Gate turn-off thyristor | |
| US4262295A (en) | Semiconductor device | |
| US3725753A (en) | Inverse gate semiconductor controlled rectifier | |
| US3746945A (en) | Schottky diode clipper device | |
| US4166224A (en) | Photosensitive zero voltage semiconductor switching device | |
| US4009059A (en) | Reverse conducting thyristor and process for producing the same | |
| JPS5912026B2 (ja) | サイリスタ | |
| US4122480A (en) | Light fired thyristor with faulty firing protection | |
| GB1562509A (en) | Reverse switching rectifier and method for making same | |
| JPH0644624B2 (ja) | なだれ電圧ブレ−クオ−バ区域内に電界抑制層を持つ電圧ブレ−クオ−バ保護型サイリスタ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19950518 |