GB1535201A - Tuned transistor amplifiers - Google Patents

Tuned transistor amplifiers

Info

Publication number
GB1535201A
GB1535201A GB3821575A GB3821575A GB1535201A GB 1535201 A GB1535201 A GB 1535201A GB 3821575 A GB3821575 A GB 3821575A GB 3821575 A GB3821575 A GB 3821575A GB 1535201 A GB1535201 A GB 1535201A
Authority
GB
United Kingdom
Prior art keywords
frequencies
amplifier
frequency
parametric
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3821575A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB3821575A priority Critical patent/GB1535201A/en
Publication of GB1535201A publication Critical patent/GB1535201A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191Tuned amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/165A filter circuit coupled to the input of an amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/171A filter circuit coupled to the output of an amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/222A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/387A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/75Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET

Abstract

1535201 Transistor amplifiers GENERAL ELECTRIC CO Ltd 4 Aug 1976 [17 Sept 1975] 38215/75 Heading H3T The invention is concerned with the prevention of unwanted parametric oscillations due to negative resistance in a tuned transistor amplifier, e.g. for 3 GHz, produced by the pumping action of the signal on a voltage dependent base-emitter capacitance, e.g. of transistor 1. In one embodiment resistors such as 10, 11 are included in any circuit path which includes the said capacitance and which resonates at a possible frequency for parametric oscillation. Such resistors are preferably decoupled at the in-band frequencies of the amplifier, e.g. by band-stop filters 6, 7, to minimize loss of power at signal frequencies. Possible frequencies for parametric oscillation are f 1 , f 2 , related by nf 1 + mf 2 = f p , where n, m are positive integers and f p is the pumping frequency, in particular a frequency of f p /2. Parametric oscillations may alternatively be prevented by eliminating resonances at such frequencies from paths in the amplifier which include negative resistance.
GB3821575A 1976-08-04 1976-08-04 Tuned transistor amplifiers Expired GB1535201A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3821575A GB1535201A (en) 1976-08-04 1976-08-04 Tuned transistor amplifiers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3821575A GB1535201A (en) 1976-08-04 1976-08-04 Tuned transistor amplifiers

Publications (1)

Publication Number Publication Date
GB1535201A true GB1535201A (en) 1978-12-13

Family

ID=10402016

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3821575A Expired GB1535201A (en) 1976-08-04 1976-08-04 Tuned transistor amplifiers

Country Status (1)

Country Link
GB (1) GB1535201A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2225683A (en) * 1988-11-09 1990-06-06 Toshiba Kk High frequency amplifier prevents parametric oscillations

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2225683A (en) * 1988-11-09 1990-06-06 Toshiba Kk High frequency amplifier prevents parametric oscillations
US5051706A (en) * 1988-11-09 1991-09-24 Kabushiki Kaisha Toshiba High frequency power amplifier circuit
GB2225683B (en) * 1988-11-09 1993-06-16 Toshiba Kk High frequency power amplifier circuit

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee