GB1533497A - Apparatus and method for depositing dielectric films using a glow discharge - Google Patents

Apparatus and method for depositing dielectric films using a glow discharge

Info

Publication number
GB1533497A
GB1533497A GB50471/76A GB5047176A GB1533497A GB 1533497 A GB1533497 A GB 1533497A GB 50471/76 A GB50471/76 A GB 50471/76A GB 5047176 A GB5047176 A GB 5047176A GB 1533497 A GB1533497 A GB 1533497A
Authority
GB
United Kingdom
Prior art keywords
gas
deposited
film
substrate
inorganic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB50471/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LFE Corp
Original Assignee
LFE Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LFE Corp filed Critical LFE Corp
Publication of GB1533497A publication Critical patent/GB1533497A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
GB50471/76A 1975-12-17 1976-12-03 Apparatus and method for depositing dielectric films using a glow discharge Expired GB1533497A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/641,441 US4066037A (en) 1975-12-17 1975-12-17 Apparatus for depositing dielectric films using a glow discharge

Publications (1)

Publication Number Publication Date
GB1533497A true GB1533497A (en) 1978-11-29

Family

ID=24572394

Family Applications (1)

Application Number Title Priority Date Filing Date
GB50471/76A Expired GB1533497A (en) 1975-12-17 1976-12-03 Apparatus and method for depositing dielectric films using a glow discharge

Country Status (4)

Country Link
US (1) US4066037A (https=)
JP (1) JPS5275983A (https=)
DE (1) DE2656821A1 (https=)
GB (1) GB1533497A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2194966A (en) * 1986-08-20 1988-03-23 Gen Electric Plc Deposition of films

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264393A (en) * 1977-10-31 1981-04-28 Motorola, Inc. Reactor apparatus for plasma etching or deposition
US5187115A (en) 1977-12-05 1993-02-16 Plasma Physics Corp. Method of forming semiconducting materials and barriers using a dual enclosure apparatus
FR2411897A2 (fr) * 1977-12-13 1979-07-13 Alsthom Atlantique Procede de depot d'une couche mince par decomposition d'un gaz dans un plasma
JPS54160568A (en) * 1978-06-09 1979-12-19 Anelva Corp Thin film forming equipment for discharge chemical reaction
DE2967538D1 (en) * 1978-06-14 1985-12-05 Fujitsu Ltd Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride
US4223048A (en) * 1978-08-07 1980-09-16 Pacific Western Systems Plasma enhanced chemical vapor processing of semiconductive wafers
DE2836911C2 (de) * 1978-08-23 1986-11-06 Siemens AG, 1000 Berlin und 8000 München Passivierungsschicht für Halbleiterbauelemente
JPS5595334A (en) * 1979-01-10 1980-07-19 Nec Corp Preparation of semiconductor device
FR2456787A1 (fr) * 1979-05-18 1980-12-12 Thomson Csf Dispositif hyperfrequence pour le depot de films minces sur des solides
US4282267A (en) * 1979-09-20 1981-08-04 Western Electric Co., Inc. Methods and apparatus for generating plasmas
US4262631A (en) * 1979-10-01 1981-04-21 Kubacki Ronald M Thin film deposition apparatus using an RF glow discharge
US4289797A (en) * 1979-10-11 1981-09-15 Western Electric Co., Incorporated Method of depositing uniform films of Six Ny or Six Oy in a plasma reactor
US4353777A (en) * 1981-04-20 1982-10-12 Lfe Corporation Selective plasma polysilicon etching
US4609424A (en) * 1981-05-22 1986-09-02 United Technologies Corporation Plasma enhanced deposition of semiconductors
US4421592A (en) * 1981-05-22 1983-12-20 United Technologies Corporation Plasma enhanced deposition of semiconductors
US4651673A (en) * 1982-09-02 1987-03-24 At&T Technologies, Inc. CVD apparatus
US4454835A (en) * 1982-09-13 1984-06-19 The United States Of America As Represented By The Secretary Of The Navy Internal photolysis reactor
US4517223A (en) * 1982-09-24 1985-05-14 Sovonics Solar Systems Method of making amorphous semiconductor alloys and devices using microwave energy
US4455351A (en) * 1983-06-13 1984-06-19 At&T Bell Laboratories Preparation of photodiodes
JPS60180998A (ja) * 1984-02-27 1985-09-14 Anelva Corp 分子線エピタキシヤル成長装置用の基板保持装置
US4997677A (en) * 1987-08-31 1991-03-05 Massachusetts Institute Of Technology Vapor phase reactor for making multilayer structures
US4918031A (en) * 1988-12-28 1990-04-17 American Telephone And Telegraph Company,At&T Bell Laboratories Processes depending on plasma generation using a helical resonator
FR2666324B1 (fr) * 1990-09-03 1993-04-09 Saint Gobain Vitrage Int Couches minces de nitrure de silicium a proprietes ameliorees.
US5824158A (en) * 1993-06-30 1998-10-20 Kabushiki Kaisha Kobe Seiko Sho Chemical vapor deposition using inductively coupled plasma and system therefor
DE102006036536B3 (de) * 2006-07-31 2008-02-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Plasmabehandeln einer Oberfläche

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB730669A (en) * 1951-12-28 1955-05-25 Erie Resistor Corp Gas plating apparatus
US2884894A (en) * 1956-11-02 1959-05-05 Metallgesellschaft Ag Apparatus for producing hard coatings on workpieces
US3460816A (en) * 1962-01-02 1969-08-12 Gen Electric Fluxless aluminum brazing furnace
NL6703526A (https=) * 1966-05-02 1967-11-03
US3424661A (en) * 1966-09-01 1969-01-28 Bell Telephone Labor Inc Method of conducting chemical reactions in a glow discharge
US3655438A (en) * 1969-10-20 1972-04-11 Int Standard Electric Corp Method of forming silicon oxide coatings in an electric discharge
US3880112A (en) * 1971-10-20 1975-04-29 Commissariat Energie Atomique Device for the preparation of thin films
US3757733A (en) * 1971-10-27 1973-09-11 Texas Instruments Inc Radial flow reactor
US3847652A (en) * 1972-12-08 1974-11-12 Nasa Method of preparing water purification membranes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2194966A (en) * 1986-08-20 1988-03-23 Gen Electric Plc Deposition of films

Also Published As

Publication number Publication date
JPS5433956B2 (https=) 1979-10-24
US4066037A (en) 1978-01-03
JPS5275983A (en) 1977-06-25
DE2656821A1 (de) 1977-06-30

Similar Documents

Publication Publication Date Title
GB1533497A (en) Apparatus and method for depositing dielectric films using a glow discharge
GB1202573A (en) Methods of depositing thin films on substrates by means of gas plasmas
GB1499857A (en) Glow discharge etching
KR950007077A (ko) 박막의 제조방법 및 제조장치
EP0757884A4 (en) METHOD FOR PRODUCING FLUORINATED SILICONE OXIDE LAYERS USING PLASMA CVD
EP0297845A3 (en) Plasma assisted apparatus and method of diamond synthesis
DE3885034D1 (de) Eingangsverteiler und Verfahren zur Steigerung der Gasdissoziation und zur PECVD von dielektrischen Filmen.
EP0174743A3 (en) Process for transition metal nitrides thin film deposition
KR920007116A (ko) 내층 절연막 형성방법
GB1393211A (en) Manufacture of shaped hollow bodies of silicon or silicon carbide
GB1398952A (en) Diffusion of arsenic ito silicon substrates
GB1118757A (en) Method of depositing silicon nitride films
JPS5391665A (en) Plasma cvd device
GB1151746A (en) A method for the Deposition of Silica Films
GB1497457A (en) Semiconductor-liquid phase epitaxial growth method and semiconductor device manufactured using the same
GB1132491A (en) Improvements in or relating to the manufacture of semiconductor systems
JPS6412522A (en) Semiconductor crystal epitaxy method
JPS5471577A (en) Production of semiconductor device
GB1518564A (en) Method for the low pressure pyrolytic deposition of silicon nitride
JPS57192032A (en) Forming method for insulating film
JPS57149776A (en) Formation of high-melting point metal and silicon compound thin film
RU2061281C1 (ru) Способ получения тонких пленок аморфного гидрогенизированного кремния
JPS55149195A (en) Manufacture of silicon carbide substrate
GB1153794A (en) Improvements in and relating to the Deposition of Silicon Nitride Films
JPS56105652A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee