DE2656821A1 - Vorrichtung und verfahren zum auftragen eines filmes auf einem substrat - Google Patents
Vorrichtung und verfahren zum auftragen eines filmes auf einem substratInfo
- Publication number
- DE2656821A1 DE2656821A1 DE19762656821 DE2656821A DE2656821A1 DE 2656821 A1 DE2656821 A1 DE 2656821A1 DE 19762656821 DE19762656821 DE 19762656821 DE 2656821 A DE2656821 A DE 2656821A DE 2656821 A1 DE2656821 A1 DE 2656821A1
- Authority
- DE
- Germany
- Prior art keywords
- gas
- reaction chamber
- substrate
- glow discharge
- silane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims description 43
- 238000000034 method Methods 0.000 title claims description 20
- 239000007789 gas Substances 0.000 claims description 53
- 238000006243 chemical reaction Methods 0.000 claims description 43
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 30
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 21
- 229910000077 silane Inorganic materials 0.000 claims description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910052756 noble gas Inorganic materials 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 230000005284 excitation Effects 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 230000004936 stimulating effect Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 229910014299 N-Si Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- KSEZPRJUTHMFGZ-UHFFFAOYSA-N 1-(3-ethyl-5,5,8,8-tetramethyl-6,7-dihydronaphthalen-2-yl)ethanone Chemical compound CC1(C)CCC(C)(C)C2=C1C=C(C(C)=O)C(CC)=C2 KSEZPRJUTHMFGZ-UHFFFAOYSA-N 0.000 description 1
- 101001034845 Mus musculus Interferon-induced transmembrane protein 3 Proteins 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- -1 hydride ion Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000006276 transfer reaction Methods 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical class [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/641,441 US4066037A (en) | 1975-12-17 | 1975-12-17 | Apparatus for depositing dielectric films using a glow discharge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2656821A1 true DE2656821A1 (de) | 1977-06-30 |
Family
ID=24572394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762656821 Withdrawn DE2656821A1 (de) | 1975-12-17 | 1976-12-15 | Vorrichtung und verfahren zum auftragen eines filmes auf einem substrat |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4066037A (https=) |
| JP (1) | JPS5275983A (https=) |
| DE (1) | DE2656821A1 (https=) |
| GB (1) | GB1533497A (https=) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2411897A2 (fr) * | 1977-12-13 | 1979-07-13 | Alsthom Atlantique | Procede de depot d'une couche mince par decomposition d'un gaz dans un plasma |
| EP0019549A1 (fr) * | 1979-05-18 | 1980-11-26 | Thomson-Csf | Dispositif hyperfréquence pour le dépôt de films minces sur des solides |
| EP0175223A1 (en) * | 1982-09-24 | 1986-03-26 | Energy Conversion Devices, Inc. | Method of making amorphous semiconductor alloys |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4264393A (en) * | 1977-10-31 | 1981-04-28 | Motorola, Inc. | Reactor apparatus for plasma etching or deposition |
| US5187115A (en) | 1977-12-05 | 1993-02-16 | Plasma Physics Corp. | Method of forming semiconducting materials and barriers using a dual enclosure apparatus |
| JPS54160568A (en) * | 1978-06-09 | 1979-12-19 | Anelva Corp | Thin film forming equipment for discharge chemical reaction |
| DE2967538D1 (en) * | 1978-06-14 | 1985-12-05 | Fujitsu Ltd | Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride |
| US4223048A (en) * | 1978-08-07 | 1980-09-16 | Pacific Western Systems | Plasma enhanced chemical vapor processing of semiconductive wafers |
| DE2836911C2 (de) * | 1978-08-23 | 1986-11-06 | Siemens AG, 1000 Berlin und 8000 München | Passivierungsschicht für Halbleiterbauelemente |
| JPS5595334A (en) * | 1979-01-10 | 1980-07-19 | Nec Corp | Preparation of semiconductor device |
| US4282267A (en) * | 1979-09-20 | 1981-08-04 | Western Electric Co., Inc. | Methods and apparatus for generating plasmas |
| US4262631A (en) * | 1979-10-01 | 1981-04-21 | Kubacki Ronald M | Thin film deposition apparatus using an RF glow discharge |
| US4289797A (en) * | 1979-10-11 | 1981-09-15 | Western Electric Co., Incorporated | Method of depositing uniform films of Six Ny or Six Oy in a plasma reactor |
| US4353777A (en) * | 1981-04-20 | 1982-10-12 | Lfe Corporation | Selective plasma polysilicon etching |
| US4609424A (en) * | 1981-05-22 | 1986-09-02 | United Technologies Corporation | Plasma enhanced deposition of semiconductors |
| US4421592A (en) * | 1981-05-22 | 1983-12-20 | United Technologies Corporation | Plasma enhanced deposition of semiconductors |
| US4651673A (en) * | 1982-09-02 | 1987-03-24 | At&T Technologies, Inc. | CVD apparatus |
| US4454835A (en) * | 1982-09-13 | 1984-06-19 | The United States Of America As Represented By The Secretary Of The Navy | Internal photolysis reactor |
| US4455351A (en) * | 1983-06-13 | 1984-06-19 | At&T Bell Laboratories | Preparation of photodiodes |
| JPS60180998A (ja) * | 1984-02-27 | 1985-09-14 | Anelva Corp | 分子線エピタキシヤル成長装置用の基板保持装置 |
| GB8620273D0 (en) * | 1986-08-20 | 1986-10-01 | Gen Electric Co Plc | Deposition of thin films |
| US4997677A (en) * | 1987-08-31 | 1991-03-05 | Massachusetts Institute Of Technology | Vapor phase reactor for making multilayer structures |
| US4918031A (en) * | 1988-12-28 | 1990-04-17 | American Telephone And Telegraph Company,At&T Bell Laboratories | Processes depending on plasma generation using a helical resonator |
| FR2666324B1 (fr) * | 1990-09-03 | 1993-04-09 | Saint Gobain Vitrage Int | Couches minces de nitrure de silicium a proprietes ameliorees. |
| US5824158A (en) * | 1993-06-30 | 1998-10-20 | Kabushiki Kaisha Kobe Seiko Sho | Chemical vapor deposition using inductively coupled plasma and system therefor |
| DE102006036536B3 (de) * | 2006-07-31 | 2008-02-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Plasmabehandeln einer Oberfläche |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB730669A (en) * | 1951-12-28 | 1955-05-25 | Erie Resistor Corp | Gas plating apparatus |
| US2884894A (en) * | 1956-11-02 | 1959-05-05 | Metallgesellschaft Ag | Apparatus for producing hard coatings on workpieces |
| US3460816A (en) * | 1962-01-02 | 1969-08-12 | Gen Electric | Fluxless aluminum brazing furnace |
| NL6703526A (https=) * | 1966-05-02 | 1967-11-03 | ||
| US3424661A (en) * | 1966-09-01 | 1969-01-28 | Bell Telephone Labor Inc | Method of conducting chemical reactions in a glow discharge |
| US3655438A (en) * | 1969-10-20 | 1972-04-11 | Int Standard Electric Corp | Method of forming silicon oxide coatings in an electric discharge |
| US3880112A (en) * | 1971-10-20 | 1975-04-29 | Commissariat Energie Atomique | Device for the preparation of thin films |
| US3757733A (en) * | 1971-10-27 | 1973-09-11 | Texas Instruments Inc | Radial flow reactor |
| US3847652A (en) * | 1972-12-08 | 1974-11-12 | Nasa | Method of preparing water purification membranes |
-
1975
- 1975-12-17 US US05/641,441 patent/US4066037A/en not_active Expired - Lifetime
-
1976
- 1976-12-03 GB GB50471/76A patent/GB1533497A/en not_active Expired
- 1976-12-13 JP JP51148800A patent/JPS5275983A/ja active Granted
- 1976-12-15 DE DE19762656821 patent/DE2656821A1/de not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2411897A2 (fr) * | 1977-12-13 | 1979-07-13 | Alsthom Atlantique | Procede de depot d'une couche mince par decomposition d'un gaz dans un plasma |
| EP0019549A1 (fr) * | 1979-05-18 | 1980-11-26 | Thomson-Csf | Dispositif hyperfréquence pour le dépôt de films minces sur des solides |
| FR2456787A1 (fr) * | 1979-05-18 | 1980-12-12 | Thomson Csf | Dispositif hyperfrequence pour le depot de films minces sur des solides |
| EP0175223A1 (en) * | 1982-09-24 | 1986-03-26 | Energy Conversion Devices, Inc. | Method of making amorphous semiconductor alloys |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1533497A (en) | 1978-11-29 |
| JPS5433956B2 (https=) | 1979-10-24 |
| US4066037A (en) | 1978-01-03 |
| JPS5275983A (en) | 1977-06-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8141 | Disposal/no request for examination |