GB1523004A - Schottky barrier type semiconductor devices - Google Patents
Schottky barrier type semiconductor devicesInfo
- Publication number
- GB1523004A GB1523004A GB14166/76A GB1416676A GB1523004A GB 1523004 A GB1523004 A GB 1523004A GB 14166/76 A GB14166/76 A GB 14166/76A GB 1416676 A GB1416676 A GB 1416676A GB 1523004 A GB1523004 A GB 1523004A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- barrier
- schottky barrier
- aluminium
- schottky
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/905—Plural dram cells share common contact or common trench
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50050435A JPS51126761A (en) | 1975-04-25 | 1975-04-25 | Schottky barrier type semi-conductor unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1523004A true GB1523004A (en) | 1978-08-31 |
Family
ID=12858774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB14166/76A Expired GB1523004A (en) | 1975-04-25 | 1976-04-07 | Schottky barrier type semiconductor devices |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4062033A (cg-RX-API-DMAC7.html) |
| JP (1) | JPS51126761A (cg-RX-API-DMAC7.html) |
| CA (1) | CA1051124A (cg-RX-API-DMAC7.html) |
| DE (1) | DE2617855A1 (cg-RX-API-DMAC7.html) |
| FR (1) | FR2309042A1 (cg-RX-API-DMAC7.html) |
| GB (1) | GB1523004A (cg-RX-API-DMAC7.html) |
| NL (1) | NL7604388A (cg-RX-API-DMAC7.html) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5414684A (en) * | 1977-07-06 | 1979-02-03 | Fuji Electric Co Ltd | Manufacture of schottky barrier diode |
| JPS55125663A (en) * | 1979-03-22 | 1980-09-27 | Hitachi Ltd | Semiconductor integrated circuit |
| FR2466861A1 (fr) * | 1979-10-05 | 1981-04-10 | Thomson Csf | Structure de diode schottky a faible bruit, et transistor a effet de champ dont la grille possede une telle structure |
| DE3012430A1 (de) * | 1980-03-31 | 1981-10-08 | Siemens AG, 1000 Berlin und 8000 München | Planare halbleiteranordnung mit erhoehter durchbruchsspannung |
| US4433469A (en) | 1980-06-30 | 1984-02-28 | Rca Corporation | Method of forming a self aligned aluminum polycrystalline silicon line |
| US4349408A (en) * | 1981-03-26 | 1982-09-14 | Rca Corporation | Method of depositing a refractory metal on a semiconductor substrate |
| JPH0618276B2 (ja) * | 1988-11-11 | 1994-03-09 | サンケン電気株式会社 | 半導体装置 |
| US5338750A (en) * | 1992-11-27 | 1994-08-16 | Industrial Technology Research Institute | Fabrication method to produce pit-free polysilicon buffer local oxidation isolation |
| US5614755A (en) * | 1993-04-30 | 1997-03-25 | Texas Instruments Incorporated | High voltage Shottky diode |
| DE19616605C2 (de) * | 1996-04-25 | 1998-03-26 | Siemens Ag | Schottkydiodenanordnung und Verfahren zur Herstellung |
| US5930658A (en) * | 1996-11-26 | 1999-07-27 | Advanced Micro Devices, Inc. | Oxidized oxygen-doped amorphous silicon ultrathin gate oxide structures |
| JPH10163468A (ja) * | 1996-12-03 | 1998-06-19 | Kagaku Gijutsu Shinko Jigyodan | 膜状複合構造体 |
| JP3287269B2 (ja) | 1997-06-02 | 2002-06-04 | 富士電機株式会社 | ダイオードとその製造方法 |
| US7115896B2 (en) * | 2002-12-04 | 2006-10-03 | Emcore Corporation | Semiconductor structures for gallium nitride-based devices |
| US7528459B2 (en) * | 2003-05-27 | 2009-05-05 | Nxp B.V. | Punch-through diode and method of processing the same |
| US7820473B2 (en) * | 2005-03-21 | 2010-10-26 | Semiconductor Components Industries, Llc | Schottky diode and method of manufacture |
| US8072791B2 (en) * | 2007-06-25 | 2011-12-06 | Sandisk 3D Llc | Method of making nonvolatile memory device containing carbon or nitrogen doped diode |
| US8102694B2 (en) * | 2007-06-25 | 2012-01-24 | Sandisk 3D Llc | Nonvolatile memory device containing carbon or nitrogen doped diode |
| TWI641152B (zh) * | 2017-03-24 | 2018-11-11 | 王中林 | 電壓增加而電阻值增加的電阻元件 |
| CN115410923B (zh) * | 2022-09-07 | 2026-05-15 | 中国科学技术大学 | 基于高温退火技术的氧化镓器件制备方法及氧化镓器件 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE300472B (cg-RX-API-DMAC7.html) * | 1965-03-31 | 1968-04-29 | Asea Ab | |
| US3586542A (en) * | 1968-11-22 | 1971-06-22 | Bell Telephone Labor Inc | Semiconductor junction devices |
| JPS5314420B2 (cg-RX-API-DMAC7.html) * | 1973-05-14 | 1978-05-17 | ||
| JPS532552B2 (cg-RX-API-DMAC7.html) * | 1974-03-30 | 1978-01-28 |
-
1975
- 1975-04-25 JP JP50050435A patent/JPS51126761A/ja active Pending
-
1976
- 1976-04-06 CA CA249,688A patent/CA1051124A/en not_active Expired
- 1976-04-07 GB GB14166/76A patent/GB1523004A/en not_active Expired
- 1976-04-09 US US05/675,630 patent/US4062033A/en not_active Expired - Lifetime
- 1976-04-23 NL NL7604388A patent/NL7604388A/xx not_active Application Discontinuation
- 1976-04-23 DE DE19762617855 patent/DE2617855A1/de not_active Withdrawn
- 1976-04-26 FR FR7612308A patent/FR2309042A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51126761A (en) | 1976-11-05 |
| FR2309042A1 (fr) | 1976-11-19 |
| US4062033A (en) | 1977-12-06 |
| FR2309042B1 (cg-RX-API-DMAC7.html) | 1980-04-04 |
| NL7604388A (nl) | 1976-10-27 |
| DE2617855A1 (de) | 1976-11-04 |
| CA1051124A (en) | 1979-03-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19930407 |