GB1517251A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1517251A GB1517251A GB5050/76A GB505076A GB1517251A GB 1517251 A GB1517251 A GB 1517251A GB 5050/76 A GB5050/76 A GB 5050/76A GB 505076 A GB505076 A GB 505076A GB 1517251 A GB1517251 A GB 1517251A
- Authority
- GB
- United Kingdom
- Prior art keywords
- regions
- diffused
- openings
- substrate
- isolation region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/559,276 US4005471A (en) | 1975-03-17 | 1975-03-17 | Semiconductor resistor having a high value resistance for use in an integrated circuit semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1517251A true GB1517251A (en) | 1978-07-12 |
Family
ID=24232976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5050/76A Expired GB1517251A (en) | 1975-03-17 | 1976-02-10 | Semiconductor devices |
Country Status (7)
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4229753A (en) * | 1977-08-18 | 1980-10-21 | International Business Machines Corporation | Voltage compensation of temperature coefficient of resistance in an integrated circuit resistor |
| JPS55123157A (en) * | 1979-03-16 | 1980-09-22 | Oki Electric Ind Co Ltd | High-stability ion-injected resistor |
| JPH10512103A (ja) * | 1995-10-20 | 1998-11-17 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 半導体抵抗装置 |
| JP4627822B2 (ja) | 1999-06-23 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US7592980B2 (en) | 2002-06-05 | 2009-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| DE10338689B4 (de) * | 2003-08-22 | 2007-03-29 | Infineon Technologies Ag | Widerstandsbauelement und Verfahren zu dessen Abgleich |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1176088A (en) * | 1951-01-28 | 1970-01-01 | Itt | Temperature Compensated Zener Diode. |
| FR1495766A (US08063081-20111122-C00115.png) * | 1965-12-10 | 1967-12-20 | ||
| US3593069A (en) * | 1969-10-08 | 1971-07-13 | Nat Semiconductor Corp | Integrated circuit resistor and method of making the same |
| US3766446A (en) * | 1969-11-20 | 1973-10-16 | Kogyo Gijutsuin | Integrated circuits comprising lateral transistors and process for fabrication thereof |
| JPS509635B1 (US08063081-20111122-C00115.png) * | 1970-09-07 | 1975-04-14 | ||
| US3729662A (en) * | 1971-03-26 | 1973-04-24 | Ibm | Semiconductor resistor |
| JPS5849997B2 (ja) * | 1972-06-14 | 1983-11-08 | 株式会社島津製作所 | Ｘ センシヤシンサツエイヨウ ホトタイマシキ ｘ センソウチ |
| JPS50103291A (US08063081-20111122-C00115.png) * | 1974-01-11 | 1975-08-15 |
-
1975
- 1975-03-17 US US05/559,276 patent/US4005471A/en not_active Expired - Lifetime
-
1976
- 1976-01-27 FR FR7602502A patent/FR2305027A1/fr active Granted
- 1976-02-10 GB GB5050/76A patent/GB1517251A/en not_active Expired
- 1976-02-20 IT IT20384/76A patent/IT1055398B/it active
- 1976-02-24 JP JP51018562A patent/JPS51114089A/ja active Pending
- 1976-02-28 DE DE19762608214 patent/DE2608214A1/de not_active Ceased
- 1976-03-02 CA CA76247252A patent/CA1048659A/en not_active Expired
-
1980
- 1980-07-10 JP JP9336680A patent/JPS5654060A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US4005471A (en) | 1977-01-25 |
| JPS51114089A (en) | 1976-10-07 |
| JPS5654060A (en) | 1981-05-13 |
| CA1048659A (en) | 1979-02-13 |
| IT1055398B (it) | 1981-12-21 |
| FR2305027A1 (fr) | 1976-10-15 |
| DE2608214A1 (de) | 1976-10-07 |
| FR2305027B1 (US08063081-20111122-C00115.png) | 1978-11-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |