GB1516813A - Method of injecting an electrical signal into a charge transfer register and charge transfer devices using such a method - Google Patents

Method of injecting an electrical signal into a charge transfer register and charge transfer devices using such a method

Info

Publication number
GB1516813A
GB1516813A GB613677A GB613677A GB1516813A GB 1516813 A GB1516813 A GB 1516813A GB 613677 A GB613677 A GB 613677A GB 613677 A GB613677 A GB 613677A GB 1516813 A GB1516813 A GB 1516813A
Authority
GB
United Kingdom
Prior art keywords
charge transfer
input
pulses
injecting
transfer device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB613677A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1516813A publication Critical patent/GB1516813A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Networks Using Active Elements (AREA)

Abstract

1516813 Charge transfer device THOMSONCSF 14 Feb 1977 [17 Feb 1976] 06136/77 Heading H3U A charge transfer device having an input device comprising a diode D e and a gate G e is fed with input signals in the form of pulses which are synchronized with one of the clock signals #, and which are width modulated in accordance with the input data to be transferred through the charge transfer device. The diode D e , gate G e and layer I constitute a field effect transistor, and if the amplitude of the input pulses is sufficient, the current through the transistor is constant and the input charge is accordingly proportional to time, i.e. to the duration of the input pulses. Thus the signal transferred is linearly related to the input signal which width modulates the pulses.
GB613677A 1976-02-17 1977-02-14 Method of injecting an electrical signal into a charge transfer register and charge transfer devices using such a method Expired GB1516813A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7604344A FR2341913A1 (en) 1976-02-17 1976-02-17 METHOD OF INTRODUCING AN ELECTRIC SIGNAL INTO A CHARGE TRANSFER REGISTER, AND DEVICE USING A REGISTER THUS CONTROLLED

Publications (1)

Publication Number Publication Date
GB1516813A true GB1516813A (en) 1978-07-05

Family

ID=9169222

Family Applications (1)

Application Number Title Priority Date Filing Date
GB613677A Expired GB1516813A (en) 1976-02-17 1977-02-14 Method of injecting an electrical signal into a charge transfer register and charge transfer devices using such a method

Country Status (4)

Country Link
JP (1) JPS52116028A (en)
DE (1) DE2706790C3 (en)
FR (1) FR2341913A1 (en)
GB (1) GB1516813A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4247788A (en) * 1978-10-23 1981-01-27 Westinghouse Electric Corp. Charge transfer device with transistor input signal divider

Also Published As

Publication number Publication date
DE2706790B2 (en) 1979-02-01
FR2341913A1 (en) 1977-09-16
FR2341913B1 (en) 1979-07-20
JPS52116028A (en) 1977-09-29
DE2706790A1 (en) 1977-08-18
DE2706790C3 (en) 1979-10-04

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee