GB1508233A - Frequency converters - Google Patents
Frequency convertersInfo
- Publication number
- GB1508233A GB1508233A GB17559/75A GB1755975A GB1508233A GB 1508233 A GB1508233 A GB 1508233A GB 17559/75 A GB17559/75 A GB 17559/75A GB 1755975 A GB1755975 A GB 1755975A GB 1508233 A GB1508233 A GB 1508233A
- Authority
- GB
- United Kingdom
- Prior art keywords
- regions
- gate
- emitter
- region
- valley
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000003321 amplification Effects 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 238000004804 winding Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
- H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5156974A JPS5712303B2 (US06811534-20041102-M00003.png) | 1974-05-09 | 1974-05-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1508233A true GB1508233A (en) | 1978-04-19 |
Family
ID=12890586
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB17559/75A Expired GB1508233A (en) | 1974-05-09 | 1975-04-28 | Frequency converters |
Country Status (9)
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6265917B1 (en) * | 1999-10-22 | 2001-07-24 | Motorola, Inc. | Circuit and method for altering the frequency of a signal |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL242787A (US06811534-20041102-M00003.png) * | 1958-09-05 | |||
NL274830A (US06811534-20041102-M00003.png) * | 1961-04-12 | |||
US3289009A (en) * | 1963-05-07 | 1966-11-29 | Ibm | Switching circuits employing surface potential controlled semiconductor devices |
US3335290A (en) * | 1964-12-30 | 1967-08-08 | Gen Telephone & Elect | Transistorized frequency multiplier and amplifier circuits |
US3397326A (en) * | 1965-03-30 | 1968-08-13 | Westinghouse Electric Corp | Bipolar transistor with field effect biasing means |
FR1486264A (US06811534-20041102-M00003.png) * | 1965-07-08 | 1967-10-05 | ||
BE755418A (fr) * | 1970-03-27 | 1971-02-01 | Sakai Tadao | Oscillateur de tonalite pour un instrument musical |
US3663869A (en) * | 1971-01-26 | 1972-05-16 | Westinghouse Electric Corp | Bipolar-unipolar transistor structure |
-
1974
- 1974-05-09 JP JP5156974A patent/JPS5712303B2/ja not_active Expired
-
1975
- 1975-04-25 US US05/571,784 patent/US4040075A/en not_active Expired - Lifetime
- 1975-04-28 GB GB17559/75A patent/GB1508233A/en not_active Expired
- 1975-04-30 CA CA225,934A patent/CA1012612A/en not_active Expired
- 1975-05-06 AT AT0346475A patent/AT373727B/de not_active IP Right Cessation
- 1975-05-07 FR FR7514366A patent/FR2270713B1/fr not_active Expired
- 1975-05-07 NL NL7505424A patent/NL7505424A/xx not_active Application Discontinuation
- 1975-05-07 DE DE2520282A patent/DE2520282C2/de not_active Expired
- 1975-05-09 ES ES437552A patent/ES437552A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS50144386A (US06811534-20041102-M00003.png) | 1975-11-20 |
ES437552A1 (es) | 1977-05-16 |
NL7505424A (nl) | 1975-11-11 |
US4040075A (en) | 1977-08-02 |
FR2270713A1 (US06811534-20041102-M00003.png) | 1975-12-05 |
DE2520282C2 (de) | 1982-12-02 |
ATA346475A (de) | 1983-06-15 |
CA1012612A (en) | 1977-06-21 |
AU8065175A (en) | 1976-11-04 |
FR2270713B1 (US06811534-20041102-M00003.png) | 1980-08-14 |
JPS5712303B2 (US06811534-20041102-M00003.png) | 1982-03-10 |
DE2520282A1 (de) | 1975-11-20 |
AT373727B (de) | 1984-02-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |