AT373727B - Frequenzwandlerschaltung - Google Patents

Frequenzwandlerschaltung

Info

Publication number
AT373727B
AT373727B AT0346475A AT346475A AT373727B AT 373727 B AT373727 B AT 373727B AT 0346475 A AT0346475 A AT 0346475A AT 346475 A AT346475 A AT 346475A AT 373727 B AT373727 B AT 373727B
Authority
AT
Austria
Prior art keywords
frequency converter
converter switching
switching
frequency
converter
Prior art date
Application number
AT0346475A
Other languages
English (en)
Other versions
ATA346475A (de
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of ATA346475A publication Critical patent/ATA346475A/de
Application granted granted Critical
Publication of AT373727B publication Critical patent/AT373727B/de

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/06Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
    • H03B19/14Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
AT0346475A 1974-05-09 1975-05-06 Frequenzwandlerschaltung AT373727B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5156974A JPS5712303B2 (de) 1974-05-09 1974-05-09

Publications (2)

Publication Number Publication Date
ATA346475A ATA346475A (de) 1983-06-15
AT373727B true AT373727B (de) 1984-02-10

Family

ID=12890586

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0346475A AT373727B (de) 1974-05-09 1975-05-06 Frequenzwandlerschaltung

Country Status (9)

Country Link
US (1) US4040075A (de)
JP (1) JPS5712303B2 (de)
AT (1) AT373727B (de)
CA (1) CA1012612A (de)
DE (1) DE2520282C2 (de)
ES (1) ES437552A1 (de)
FR (1) FR2270713B1 (de)
GB (1) GB1508233A (de)
NL (1) NL7505424A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6265917B1 (en) * 1999-10-22 2001-07-24 Motorola, Inc. Circuit and method for altering the frequency of a signal

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL242787A (de) * 1958-09-05
NL274830A (de) * 1961-04-12
US3289009A (en) * 1963-05-07 1966-11-29 Ibm Switching circuits employing surface potential controlled semiconductor devices
US3335290A (en) * 1964-12-30 1967-08-08 Gen Telephone & Elect Transistorized frequency multiplier and amplifier circuits
US3397326A (en) * 1965-03-30 1968-08-13 Westinghouse Electric Corp Bipolar transistor with field effect biasing means
FR1486264A (de) * 1965-07-08 1967-10-05
BE755418A (fr) * 1970-03-27 1971-02-01 Sakai Tadao Oscillateur de tonalite pour un instrument musical
US3663869A (en) * 1971-01-26 1972-05-16 Westinghouse Electric Corp Bipolar-unipolar transistor structure

Also Published As

Publication number Publication date
ES437552A1 (es) 1977-05-16
AU8065175A (en) 1976-11-04
DE2520282C2 (de) 1982-12-02
US4040075A (en) 1977-08-02
GB1508233A (en) 1978-04-19
ATA346475A (de) 1983-06-15
JPS5712303B2 (de) 1982-03-10
JPS50144386A (de) 1975-11-20
DE2520282A1 (de) 1975-11-20
CA1012612A (en) 1977-06-21
FR2270713A1 (de) 1975-12-05
NL7505424A (nl) 1975-11-11
FR2270713B1 (de) 1980-08-14

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee
ELJ Ceased due to non-payment of the annual fee