GB1500529A - Etch resistant mask - Google Patents
Etch resistant maskInfo
- Publication number
- GB1500529A GB1500529A GB6918/75A GB691875A GB1500529A GB 1500529 A GB1500529 A GB 1500529A GB 6918/75 A GB6918/75 A GB 6918/75A GB 691875 A GB691875 A GB 691875A GB 1500529 A GB1500529 A GB 1500529A
- Authority
- GB
- United Kingdom
- Prior art keywords
- film
- areas
- million
- molecular weight
- average molecular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 abstract 2
- 238000010894 electron beam technology Methods 0.000 abstract 2
- 229920000642 polymer Polymers 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229920001577 copolymer Polymers 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 abstract 1
- 238000006116 polymerization reaction Methods 0.000 abstract 1
- 239000004926 polymethyl methacrylate Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/454,058 US3996393A (en) | 1974-03-25 | 1974-03-25 | Positive polymeric electron beam resists of very great sensitivity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1500529A true GB1500529A (en) | 1978-02-08 |
Family
ID=23803126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB6918/75A Expired GB1500529A (en) | 1974-03-25 | 1975-02-19 | Etch resistant mask |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3996393A (enExample) |
| JP (1) | JPS5135863B2 (enExample) |
| DE (1) | DE2512745A1 (enExample) |
| FR (1) | FR2265809B1 (enExample) |
| GB (1) | GB1500529A (enExample) |
| IT (1) | IT1031239B (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4103064A (en) * | 1976-01-09 | 1978-07-25 | Dios, Inc. | Microdevice substrate and method for making micropattern devices |
| JPS5350681A (en) * | 1976-10-19 | 1978-05-09 | Matsushita Electric Ind Co Ltd | Solvent for electron beam resist |
| FR2394833A1 (fr) * | 1977-06-17 | 1979-01-12 | Thomson Csf | Resine de masquage positive presentant une sensibilite amelioree a l'irradiation electronique, et methode de fabrication d'une telle resine |
| US4289845A (en) * | 1978-05-22 | 1981-09-15 | Bell Telephone Laboratories, Inc. | Fabrication based on radiation sensitive resists and related products |
| US4208211A (en) * | 1978-05-23 | 1980-06-17 | Bell Telephone Laboratories, Incorporated | Fabrication based on radiation sensitive resists and related products |
| JPS5511217A (en) * | 1978-07-10 | 1980-01-26 | Nippon Telegr & Teleph Corp <Ntt> | Pattern forming method using radiation sensitive high polymer |
| JPS5828571B2 (ja) * | 1978-07-20 | 1983-06-16 | 沖電気工業株式会社 | 微細加工用レジスト形成方法 |
| US4262081A (en) * | 1979-11-21 | 1981-04-14 | Bell Telephone Laboratories, Incorporated | Fabrication based on radiation sensitive resists of halo-alkyl styrene polymers |
| NL8101200A (nl) * | 1981-03-12 | 1982-10-01 | Philips Nv | Werkwijze voor het aanbrengen van een resistmateriaal op een drager en resist-materiaal. |
| ES525880A0 (es) * | 1982-09-28 | 1985-03-01 | Exxon Research Engineering Co | Un metodo de aumentar la sensibilidad de una capa protectora positiva de polimero |
| JPH0562431U (ja) * | 1992-01-30 | 1993-08-20 | 日本マタイ株式会社 | 荷物積載用パレット |
| US9002343B2 (en) * | 2007-08-10 | 2015-04-07 | International Business Machines Corporation | Disabling a mobile phone suspected of being a trigger for a bomb |
| US20100203450A1 (en) * | 2009-02-11 | 2010-08-12 | International Business Machines Corporation | Photoresist compositions and methods of use |
| US9625815B2 (en) * | 2013-09-27 | 2017-04-18 | Intel Corporation | Exposure activated chemically amplified directed self-assembly (DSA) for back end of line (BEOL) pattern cutting and plugging |
| CN117215150A (zh) * | 2023-08-24 | 2023-12-12 | 道夫新材料(惠州)有限公司 | 电子束光刻胶及其制备方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3535137A (en) * | 1967-01-13 | 1970-10-20 | Ibm | Method of fabricating etch resistant masks |
| US3779806A (en) * | 1972-03-24 | 1973-12-18 | Ibm | Electron beam sensitive polymer t-butyl methacrylate resist |
| US3932352A (en) * | 1974-03-22 | 1976-01-13 | The United States Of America As Represented By The Secretary Of Agriculture | Photodegradable plastic composition containing a N-halo imide |
-
1974
- 1974-03-25 US US05/454,058 patent/US3996393A/en not_active Expired - Lifetime
-
1975
- 1975-01-24 FR FR7502848A patent/FR2265809B1/fr not_active Expired
- 1975-01-29 IT IT19691/75A patent/IT1031239B/it active
- 1975-02-07 JP JP50015525A patent/JPS5135863B2/ja not_active Expired
- 1975-02-19 GB GB6918/75A patent/GB1500529A/en not_active Expired
- 1975-03-22 DE DE19752512745 patent/DE2512745A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US3996393A (en) | 1976-12-07 |
| FR2265809A1 (enExample) | 1975-10-24 |
| IT1031239B (it) | 1979-04-30 |
| JPS5135863B2 (enExample) | 1976-10-05 |
| JPS50126424A (enExample) | 1975-10-04 |
| DE2512745A1 (de) | 1975-10-09 |
| FR2265809B1 (enExample) | 1978-03-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1500529A (en) | Etch resistant mask | |
| Hatzakis | PMMA copolymers as high sensitivity electron resists | |
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| US3594243A (en) | Formation of polymeric resists | |
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| US3520685A (en) | Etching silicon dioxide by direct photolysis | |
| US3458313A (en) | High resolution developing of photosensitive resists | |
| US3985915A (en) | Use of nitrocellulose containing 10.5 to 12% nitrogen as electron beam positive resists | |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |