IT1031239B - Processo per la preparazione di un materiale resistivo po limeric ad azione positiva altamente semsiolie all azione di un fascio di elettroni - Google Patents

Processo per la preparazione di un materiale resistivo po limeric ad azione positiva altamente semsiolie all azione di un fascio di elettroni

Info

Publication number
IT1031239B
IT1031239B IT19691/75A IT1969175A IT1031239B IT 1031239 B IT1031239 B IT 1031239B IT 19691/75 A IT19691/75 A IT 19691/75A IT 1969175 A IT1969175 A IT 1969175A IT 1031239 B IT1031239 B IT 1031239B
Authority
IT
Italy
Prior art keywords
action
semiolious
limeric
bundle
electrons
Prior art date
Application number
IT19691/75A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1031239B publication Critical patent/IT1031239B/it

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
IT19691/75A 1974-03-25 1975-01-29 Processo per la preparazione di un materiale resistivo po limeric ad azione positiva altamente semsiolie all azione di un fascio di elettroni IT1031239B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/454,058 US3996393A (en) 1974-03-25 1974-03-25 Positive polymeric electron beam resists of very great sensitivity

Publications (1)

Publication Number Publication Date
IT1031239B true IT1031239B (it) 1979-04-30

Family

ID=23803126

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19691/75A IT1031239B (it) 1974-03-25 1975-01-29 Processo per la preparazione di un materiale resistivo po limeric ad azione positiva altamente semsiolie all azione di un fascio di elettroni

Country Status (6)

Country Link
US (1) US3996393A (it)
JP (1) JPS5135863B2 (it)
DE (1) DE2512745A1 (it)
FR (1) FR2265809B1 (it)
GB (1) GB1500529A (it)
IT (1) IT1031239B (it)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4103064A (en) * 1976-01-09 1978-07-25 Dios, Inc. Microdevice substrate and method for making micropattern devices
JPS5350681A (en) * 1976-10-19 1978-05-09 Matsushita Electric Ind Co Ltd Solvent for electron beam resist
FR2394833A1 (fr) * 1977-06-17 1979-01-12 Thomson Csf Resine de masquage positive presentant une sensibilite amelioree a l'irradiation electronique, et methode de fabrication d'une telle resine
US4289845A (en) * 1978-05-22 1981-09-15 Bell Telephone Laboratories, Inc. Fabrication based on radiation sensitive resists and related products
US4208211A (en) * 1978-05-23 1980-06-17 Bell Telephone Laboratories, Incorporated Fabrication based on radiation sensitive resists and related products
JPS5511217A (en) * 1978-07-10 1980-01-26 Nippon Telegr & Teleph Corp <Ntt> Pattern forming method using radiation sensitive high polymer
JPS5828571B2 (ja) * 1978-07-20 1983-06-16 沖電気工業株式会社 微細加工用レジスト形成方法
US4262081A (en) * 1979-11-21 1981-04-14 Bell Telephone Laboratories, Incorporated Fabrication based on radiation sensitive resists of halo-alkyl styrene polymers
NL8101200A (nl) * 1981-03-12 1982-10-01 Philips Nv Werkwijze voor het aanbrengen van een resistmateriaal op een drager en resist-materiaal.
ES525880A0 (es) * 1982-09-28 1985-03-01 Exxon Research Engineering Co Un metodo de aumentar la sensibilidad de una capa protectora positiva de polimero
JPH0562431U (ja) * 1992-01-30 1993-08-20 日本マタイ株式会社 荷物積載用パレット
US9002343B2 (en) * 2007-08-10 2015-04-07 International Business Machines Corporation Disabling a mobile phone suspected of being a trigger for a bomb
US20100203450A1 (en) * 2009-02-11 2010-08-12 International Business Machines Corporation Photoresist compositions and methods of use
US9625815B2 (en) * 2013-09-27 2017-04-18 Intel Corporation Exposure activated chemically amplified directed self-assembly (DSA) for back end of line (BEOL) pattern cutting and plugging
CN117215150A (zh) * 2023-08-24 2023-12-12 道夫新材料(惠州)有限公司 电子束光刻胶及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3535137A (en) * 1967-01-13 1970-10-20 Ibm Method of fabricating etch resistant masks
US3779806A (en) * 1972-03-24 1973-12-18 Ibm Electron beam sensitive polymer t-butyl methacrylate resist
US3932352A (en) * 1974-03-22 1976-01-13 The United States Of America As Represented By The Secretary Of Agriculture Photodegradable plastic composition containing a N-halo imide

Also Published As

Publication number Publication date
DE2512745A1 (de) 1975-10-09
JPS50126424A (it) 1975-10-04
JPS5135863B2 (it) 1976-10-05
GB1500529A (en) 1978-02-08
FR2265809B1 (it) 1978-03-10
US3996393A (en) 1976-12-07
FR2265809A1 (it) 1975-10-24

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