GB1493814A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1493814A
GB1493814A GB46514/74A GB4651474A GB1493814A GB 1493814 A GB1493814 A GB 1493814A GB 46514/74 A GB46514/74 A GB 46514/74A GB 4651474 A GB4651474 A GB 4651474A GB 1493814 A GB1493814 A GB 1493814A
Authority
GB
United Kingdom
Prior art keywords
metal
semiconductor
oct
leadthrough
recrystallized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB46514/74A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB1493814A publication Critical patent/GB1493814A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40Crystalline structures
    • H10D62/405Orientations of crystalline planes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481Internal lead connections, e.g. via connections, feedthrough structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Bipolar Transistors (AREA)
GB46514/74A 1973-10-30 1974-10-28 Semiconductor devices Expired GB1493814A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41129573A 1973-10-30 1973-10-30

Publications (1)

Publication Number Publication Date
GB1493814A true GB1493814A (en) 1977-11-30

Family

ID=23628360

Family Applications (1)

Application Number Title Priority Date Filing Date
GB46514/74A Expired GB1493814A (en) 1973-10-30 1974-10-28 Semiconductor devices

Country Status (6)

Country Link
JP (1) JPS5080788A (enrdf_load_stackoverflow)
CA (1) CA1020290A (enrdf_load_stackoverflow)
DE (1) DE2450902A1 (enrdf_load_stackoverflow)
FR (1) FR2249443B1 (enrdf_load_stackoverflow)
GB (1) GB1493814A (enrdf_load_stackoverflow)
SE (1) SE396846B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2136203A (en) * 1983-03-02 1984-09-12 Standard Telephones Cables Ltd Through-wafer integrated circuit connections

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4042448A (en) * 1975-11-26 1977-08-16 General Electric Company Post TGZM surface etch
JPS57153446A (en) * 1981-03-17 1982-09-22 Nec Corp Semiconductor device for integrated circuit
JPS5853859A (ja) * 1981-09-26 1983-03-30 Matsushita Electric Ind Co Ltd 集積型薄膜素子の製造方法
JPS5857015U (ja) * 1981-10-14 1983-04-18 東芝テック株式会社 直管形螢光灯器具

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2136203A (en) * 1983-03-02 1984-09-12 Standard Telephones Cables Ltd Through-wafer integrated circuit connections

Also Published As

Publication number Publication date
FR2249443B1 (enrdf_load_stackoverflow) 1978-09-29
CA1020290A (en) 1977-11-01
SE396846B (sv) 1977-10-03
JPS5080788A (enrdf_load_stackoverflow) 1975-07-01
DE2450902A1 (de) 1975-05-07
FR2249443A1 (enrdf_load_stackoverflow) 1975-05-23
SE7413675L (enrdf_load_stackoverflow) 1975-05-02

Similar Documents

Publication Publication Date Title
GB1493829A (en) Semiconductors
IT7830247A0 (it) Apparecchiatura per depositare uno strato epitassiale di materiale semiconduttore monocristallino.
CA1010576A (en) Heat sink cooled power semiconductor device assembly having liquid metal interface
CA1002920A (en) Device for monitoring and adjusting the temperature of multiple cooling circuits
GB1493814A (en) Semiconductor devices
ES393035A1 (es) Un dispositivo semiconductor.
AU2091376A (en) Low temperature silicon thyristor
JPS5544743A (en) Manufacture of semiconductor device
NL7709714A (nl) Werkwijze voor de vervaardiging van epitaxiale lagen op monokristallijne substraten volgens de vloeistof-schuifepitaxie.
GB1074726A (en) Improvements in or relating to the manufacture of semiconductor structures
JPS5236980A (en) Heat sink for semiconductor devices
JPS5264284A (en) Semiconductor device
JPS534473A (en) Silicon semiconductor device
JPS5326663A (en) Manu facture of semiconductor device
JPS5329082A (en) Semiconductor device
CA996845A (en) N-type silicon carbide monocrystal
GB748847A (en) Improvements in or relating to thermocouples
GB1493827A (en) Semiconductors
JPS526081A (en) Semiconductor wafer
LUTKOV et al. Investigation of the thermal and electrical conductivities of silicified graphites(Si and silicon carbide effects on silicided graphite thermal and electrical conductivities)
JPS5287374A (en) Soi type semiconductor device
JPS53147476A (en) Semiconductor device
CA859941A (en) Control of carrier lifetime in silicon devices by the epitaxy growth technique
DONATH et al. Review of semiconductor and mechanical scanning methods to satisfy the switching requirements of spaceborne telemetry and instrumentation systems
JPS52132784A (en) Integrating circuit

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee