GB1467263A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1467263A
GB1467263A GB532174A GB532174A GB1467263A GB 1467263 A GB1467263 A GB 1467263A GB 532174 A GB532174 A GB 532174A GB 532174 A GB532174 A GB 532174A GB 1467263 A GB1467263 A GB 1467263A
Authority
GB
United Kingdom
Prior art keywords
layer
region
contact
emitter
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB532174A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of GB1467263A publication Critical patent/GB1467263A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/6309—
    • H10P14/6322—
    • H10P14/662—
    • H10P14/69215—
    • H10P14/6923—
    • H10P32/1414—
    • H10P32/171—
    • H10P95/00—
    • H10W20/40—

Landscapes

  • Bipolar Transistors (AREA)
GB532174A 1973-02-05 1974-02-05 Semiconductor device Expired GB1467263A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US329795A US3915767A (en) 1973-02-05 1973-02-05 Rapidly responsive transistor with narrowed base

Publications (1)

Publication Number Publication Date
GB1467263A true GB1467263A (en) 1977-03-16

Family

ID=23287051

Family Applications (1)

Application Number Title Priority Date Filing Date
GB532174A Expired GB1467263A (en) 1973-02-05 1974-02-05 Semiconductor device

Country Status (3)

Country Link
US (1) US3915767A (enExample)
JP (1) JPS49107679A (enExample)
GB (1) GB1467263A (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4006046A (en) * 1975-04-21 1977-02-01 Trw Inc. Method for compensating for emitter-push effect in the fabrication of transistors
US4063973A (en) * 1975-11-10 1977-12-20 Tokyo Shibaura Electric Co., Ltd. Method of making a semiconductor device
JPS5359380A (en) * 1976-11-09 1978-05-29 Nippon Gakki Seizo Kk Production of transistor
JPS543479A (en) * 1977-06-09 1979-01-11 Toshiba Corp Semiconductor device and its manufacture
US4191603A (en) * 1978-05-01 1980-03-04 International Business Machines Corporation Making semiconductor structure with improved phosphosilicate glass isolation
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
JPS5544713A (en) * 1978-09-26 1980-03-29 Toshiba Corp Semiconductor device
JPS5586151A (en) * 1978-12-23 1980-06-28 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor integrated circuit
US4263066A (en) * 1980-06-09 1981-04-21 Varian Associates, Inc. Process for concurrent formation of base diffusion and p+ profile from single source predeposition
US4567644A (en) * 1982-12-20 1986-02-04 Signetics Corporation Method of making triple diffused ISL structure
IT1188309B (it) * 1986-01-24 1988-01-07 Sgs Microelettrica Spa Procedimento per la fabbricazione di dispositivi elettronici integrati,in particolare transistori mos a canale p ad alta tensione
JP2565317B2 (ja) * 1986-12-03 1996-12-18 富士通株式会社 半導体装置の製造方法
KR900005123B1 (ko) * 1987-09-26 1990-07-19 삼성전자 주식회사 바이폴라 트랜지스터의 제조방법
US5236867A (en) * 1987-11-13 1993-08-17 Matsushita Electronics Corporation Manufacturing method of contact hole arrangement of a semiconductor device
US5008207A (en) * 1989-09-11 1991-04-16 International Business Machines Corporation Method of fabricating a narrow base transistor
US5132765A (en) * 1989-09-11 1992-07-21 Blouse Jeffrey L Narrow base transistor and method of fabricating same
US5274267A (en) * 1992-01-31 1993-12-28 International Business Machines Corporation Bipolar transistor with low extrinsic base resistance and low noise
JP2924417B2 (ja) * 1992-02-26 1999-07-26 日本電気株式会社 半導体装置
JP3527148B2 (ja) * 1999-09-24 2004-05-17 日本電気株式会社 半導体装置の製造方法
US6406966B1 (en) * 2000-11-07 2002-06-18 National Semiconductor Corporation Uniform emitter formation using selective laser recrystallization

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3664896A (en) * 1969-07-28 1972-05-23 David M Duncan Deposited silicon diffusion sources
JPS495668B1 (enExample) * 1970-04-03 1974-02-08
US3660156A (en) * 1970-08-19 1972-05-02 Monsanto Co Semiconductor doping compositions
US3673471A (en) * 1970-10-08 1972-06-27 Fairchild Camera Instr Co Doped semiconductor electrodes for mos type devices
US3759762A (en) * 1970-10-19 1973-09-18 Motorola Inc Method of forming integrated circuits utilizing low resistance valueslow temperature deposited oxides and shallow junctions
US3753807A (en) * 1972-02-24 1973-08-21 Bell Canada Northern Electric Manufacture of bipolar semiconductor devices

Also Published As

Publication number Publication date
JPS49107679A (enExample) 1974-10-12
US3915767A (en) 1975-10-28

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee