JPS49107679A - - Google Patents
Info
- Publication number
- JPS49107679A JPS49107679A JP49011565A JP1156574A JPS49107679A JP S49107679 A JPS49107679 A JP S49107679A JP 49011565 A JP49011565 A JP 49011565A JP 1156574 A JP1156574 A JP 1156574A JP S49107679 A JPS49107679 A JP S49107679A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/405—Orientations of crystalline planes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- H10P14/6309—
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- H10P14/6322—
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- H10P14/662—
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- H10P14/69215—
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- H10P14/6923—
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- H10P32/1414—
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- H10P32/171—
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- H10P95/00—
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- H10W20/40—
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US329795A US3915767A (en) | 1973-02-05 | 1973-02-05 | Rapidly responsive transistor with narrowed base |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS49107679A true JPS49107679A (enExample) | 1974-10-12 |
Family
ID=23287051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49011565A Pending JPS49107679A (enExample) | 1973-02-05 | 1974-01-29 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3915767A (enExample) |
| JP (1) | JPS49107679A (enExample) |
| GB (1) | GB1467263A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5359380A (en) * | 1976-11-09 | 1978-05-29 | Nippon Gakki Seizo Kk | Production of transistor |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4006046A (en) * | 1975-04-21 | 1977-02-01 | Trw Inc. | Method for compensating for emitter-push effect in the fabrication of transistors |
| US4063973A (en) * | 1975-11-10 | 1977-12-20 | Tokyo Shibaura Electric Co., Ltd. | Method of making a semiconductor device |
| JPS543479A (en) * | 1977-06-09 | 1979-01-11 | Toshiba Corp | Semiconductor device and its manufacture |
| US4191603A (en) * | 1978-05-01 | 1980-03-04 | International Business Machines Corporation | Making semiconductor structure with improved phosphosilicate glass isolation |
| US4157269A (en) * | 1978-06-06 | 1979-06-05 | International Business Machines Corporation | Utilizing polysilicon diffusion sources and special masking techniques |
| JPS5544713A (en) * | 1978-09-26 | 1980-03-29 | Toshiba Corp | Semiconductor device |
| JPS5586151A (en) * | 1978-12-23 | 1980-06-28 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor integrated circuit |
| US4263066A (en) * | 1980-06-09 | 1981-04-21 | Varian Associates, Inc. | Process for concurrent formation of base diffusion and p+ profile from single source predeposition |
| US4567644A (en) * | 1982-12-20 | 1986-02-04 | Signetics Corporation | Method of making triple diffused ISL structure |
| IT1188309B (it) * | 1986-01-24 | 1988-01-07 | Sgs Microelettrica Spa | Procedimento per la fabbricazione di dispositivi elettronici integrati,in particolare transistori mos a canale p ad alta tensione |
| JP2565317B2 (ja) * | 1986-12-03 | 1996-12-18 | 富士通株式会社 | 半導体装置の製造方法 |
| KR900005123B1 (ko) * | 1987-09-26 | 1990-07-19 | 삼성전자 주식회사 | 바이폴라 트랜지스터의 제조방법 |
| US5236867A (en) * | 1987-11-13 | 1993-08-17 | Matsushita Electronics Corporation | Manufacturing method of contact hole arrangement of a semiconductor device |
| US5008207A (en) * | 1989-09-11 | 1991-04-16 | International Business Machines Corporation | Method of fabricating a narrow base transistor |
| US5132765A (en) * | 1989-09-11 | 1992-07-21 | Blouse Jeffrey L | Narrow base transistor and method of fabricating same |
| US5274267A (en) * | 1992-01-31 | 1993-12-28 | International Business Machines Corporation | Bipolar transistor with low extrinsic base resistance and low noise |
| JP2924417B2 (ja) * | 1992-02-26 | 1999-07-26 | 日本電気株式会社 | 半導体装置 |
| JP3527148B2 (ja) * | 1999-09-24 | 2004-05-17 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6406966B1 (en) * | 2000-11-07 | 2002-06-18 | National Semiconductor Corporation | Uniform emitter formation using selective laser recrystallization |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3664896A (en) * | 1969-07-28 | 1972-05-23 | David M Duncan | Deposited silicon diffusion sources |
| JPS495668B1 (enExample) * | 1970-04-03 | 1974-02-08 | ||
| US3660156A (en) * | 1970-08-19 | 1972-05-02 | Monsanto Co | Semiconductor doping compositions |
| US3673471A (en) * | 1970-10-08 | 1972-06-27 | Fairchild Camera Instr Co | Doped semiconductor electrodes for mos type devices |
| US3759762A (en) * | 1970-10-19 | 1973-09-18 | Motorola Inc | Method of forming integrated circuits utilizing low resistance valueslow temperature deposited oxides and shallow junctions |
| US3753807A (en) * | 1972-02-24 | 1973-08-21 | Bell Canada Northern Electric | Manufacture of bipolar semiconductor devices |
-
1973
- 1973-02-05 US US329795A patent/US3915767A/en not_active Expired - Lifetime
-
1974
- 1974-01-29 JP JP49011565A patent/JPS49107679A/ja active Pending
- 1974-02-05 GB GB532174A patent/GB1467263A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5359380A (en) * | 1976-11-09 | 1978-05-29 | Nippon Gakki Seizo Kk | Production of transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1467263A (en) | 1977-03-16 |
| US3915767A (en) | 1975-10-28 |