GB1447184A - Method of thermally oxidising silicon - Google Patents

Method of thermally oxidising silicon

Info

Publication number
GB1447184A
GB1447184A GB99574A GB99574A GB1447184A GB 1447184 A GB1447184 A GB 1447184A GB 99574 A GB99574 A GB 99574A GB 99574 A GB99574 A GB 99574A GB 1447184 A GB1447184 A GB 1447184A
Authority
GB
United Kingdom
Prior art keywords
silicon
minutes
carbon tetrachloride
stream
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB99574A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1447184A publication Critical patent/GB1447184A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
GB99574A 1973-03-24 1974-01-09 Method of thermally oxidising silicon Expired GB1447184A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2314746A DE2314746C2 (de) 1973-03-24 1973-03-24 Verfahren zum thermischen Oxydieren von Silicium unter Zusatz einer Chlorkohlenstoffverbindung

Publications (1)

Publication Number Publication Date
GB1447184A true GB1447184A (en) 1976-08-25

Family

ID=5875788

Family Applications (1)

Application Number Title Priority Date Filing Date
GB99574A Expired GB1447184A (en) 1973-03-24 1974-01-09 Method of thermally oxidising silicon

Country Status (6)

Country Link
JP (1) JPS5247305B2 (de)
CA (1) CA1020849A (de)
DE (1) DE2314746C2 (de)
FR (1) FR2222312B1 (de)
GB (1) GB1447184A (de)
IT (1) IT1003483B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5690528A (en) * 1979-12-22 1981-07-22 Chiyou Lsi Gijutsu Kenkyu Kumiai Surface treatment of semiconductor device
US5139869A (en) * 1988-09-01 1992-08-18 Wolfgang Euen Thin dielectric layer on a substrate
US5268311A (en) * 1988-09-01 1993-12-07 International Business Machines Corporation Method for forming a thin dielectric layer on a substrate
EP0356557B1 (de) * 1988-09-01 1994-12-21 International Business Machines Corporation Dünne dielektrische Schicht auf einem Substrat und Verfahren zu deren Herstellung

Also Published As

Publication number Publication date
JPS5247305B2 (de) 1977-12-01
IT1003483B (it) 1976-06-10
FR2222312B1 (de) 1976-12-03
DE2314746A1 (de) 1974-09-26
CA1020849A (en) 1977-11-15
FR2222312A1 (de) 1974-10-18
JPS5010081A (de) 1975-02-01
DE2314746C2 (de) 1983-11-17

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee