GB1445432A - Method of producing homogeneously doped regions in semiconductor components - Google Patents

Method of producing homogeneously doped regions in semiconductor components

Info

Publication number
GB1445432A
GB1445432A GB3423673A GB3423673A GB1445432A GB 1445432 A GB1445432 A GB 1445432A GB 3423673 A GB3423673 A GB 3423673A GB 3423673 A GB3423673 A GB 3423673A GB 1445432 A GB1445432 A GB 1445432A
Authority
GB
United Kingdom
Prior art keywords
diffusion
type
silicon
region
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3423673A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to IN2285/CAL/73A priority Critical patent/IN138039B/en
Publication of GB1445432A publication Critical patent/GB1445432A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/918—Special or nonstandard dopant
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thyristors (AREA)
  • Recrystallisation Techniques (AREA)
GB3423673A 1972-09-14 1973-07-18 Method of producing homogeneously doped regions in semiconductor components Expired GB1445432A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
IN2285/CAL/73A IN138039B (enExample) 1973-07-18 1973-10-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722244992 DE2244992B2 (de) 1972-09-14 1972-09-14 Verfahren zum herstellen homogen dotierter zonen in halbleiterbauelementen

Publications (1)

Publication Number Publication Date
GB1445432A true GB1445432A (en) 1976-08-11

Family

ID=5856250

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3423673A Expired GB1445432A (en) 1972-09-14 1973-07-18 Method of producing homogeneously doped regions in semiconductor components

Country Status (7)

Country Link
US (1) US3856586A (enExample)
JP (1) JPS5212541B2 (enExample)
BR (1) BR7306340D0 (enExample)
DE (1) DE2244992B2 (enExample)
FR (1) FR2200622A1 (enExample)
GB (1) GB1445432A (enExample)
SE (1) SE387774B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2610942C2 (de) * 1976-03-16 1983-04-28 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines Halbleiterbauelements mit in einem Halbleiterkörper monolithisch integrierten Halbleiterelementeinheiten
JPS55140437A (en) * 1979-04-17 1980-11-01 Canon Inc Sheet feeder
US5129965A (en) * 1990-07-20 1992-07-14 Nippon Steel Corporation Method of producing grain oriented silicon steel sheets each having a low watt loss and a mirror surface
US6838321B2 (en) * 2002-09-26 2005-01-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor substrate with defects reduced or removed and method of manufacturing the same, and semiconductor device capable of bidirectionally retaining breakdown voltage and method of manufacturing the same
US7592642B1 (en) 2003-09-25 2009-09-22 T-Ram Semiconductor, Inc. Thyristor-based semiconductor device with indium-carbon implant and method of fabrication
US7195959B1 (en) * 2004-10-04 2007-03-27 T-Ram Semiconductor, Inc. Thyristor-based semiconductor device and method of fabrication
US9595678B2 (en) * 2010-07-23 2017-03-14 Basf Se Dye solar cell with improved stability

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2954308A (en) * 1956-05-21 1960-09-27 Ibm Semiconductor impurity diffusion
US3476993A (en) * 1959-09-08 1969-11-04 Gen Electric Five layer and junction bridging terminal switching device
US3573115A (en) * 1968-04-22 1971-03-30 Int Rectifier Corp Sealed tube diffusion process
US3549434A (en) * 1968-09-19 1970-12-22 Gen Electric Low resisitivity group iib-vib compounds and method of formation
US3798084A (en) * 1972-08-11 1974-03-19 Ibm Simultaneous diffusion processing

Also Published As

Publication number Publication date
DE2244992B2 (de) 1976-02-05
SE387774B (sv) 1976-09-13
FR2200622A1 (enExample) 1974-04-19
BR7306340D0 (pt) 1974-07-11
JPS4966276A (enExample) 1974-06-27
JPS5212541B2 (enExample) 1977-04-07
DE2244992A1 (de) 1974-04-04
US3856586A (en) 1974-12-24

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee