FR2200622A1 - - Google Patents

Info

Publication number
FR2200622A1
FR2200622A1 FR7332820A FR7332820A FR2200622A1 FR 2200622 A1 FR2200622 A1 FR 2200622A1 FR 7332820 A FR7332820 A FR 7332820A FR 7332820 A FR7332820 A FR 7332820A FR 2200622 A1 FR2200622 A1 FR 2200622A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7332820A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of FR2200622A1 publication Critical patent/FR2200622A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/918—Special or nonstandard dopant
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
FR7332820A 1972-09-14 1973-09-12 Withdrawn FR2200622A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722244992 DE2244992B2 (de) 1972-09-14 1972-09-14 Verfahren zum herstellen homogen dotierter zonen in halbleiterbauelementen

Publications (1)

Publication Number Publication Date
FR2200622A1 true FR2200622A1 (fr) 1974-04-19

Family

ID=5856250

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7332820A Withdrawn FR2200622A1 (fr) 1972-09-14 1973-09-12

Country Status (7)

Country Link
US (1) US3856586A (fr)
JP (1) JPS5212541B2 (fr)
BR (1) BR7306340D0 (fr)
DE (1) DE2244992B2 (fr)
FR (1) FR2200622A1 (fr)
GB (1) GB1445432A (fr)
SE (1) SE387774B (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2610942C2 (de) * 1976-03-16 1983-04-28 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines Halbleiterbauelements mit in einem Halbleiterkörper monolithisch integrierten Halbleiterelementeinheiten
JPS55140437A (en) * 1979-04-17 1980-11-01 Canon Inc Sheet feeder
US5129965A (en) * 1990-07-20 1992-07-14 Nippon Steel Corporation Method of producing grain oriented silicon steel sheets each having a low watt loss and a mirror surface
US6838321B2 (en) * 2002-09-26 2005-01-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor substrate with defects reduced or removed and method of manufacturing the same, and semiconductor device capable of bidirectionally retaining breakdown voltage and method of manufacturing the same
US7592642B1 (en) 2003-09-25 2009-09-22 T-Ram Semiconductor, Inc. Thyristor-based semiconductor device with indium-carbon implant and method of fabrication
US7195959B1 (en) * 2004-10-04 2007-03-27 T-Ram Semiconductor, Inc. Thyristor-based semiconductor device and method of fabrication
US9595678B2 (en) * 2010-07-23 2017-03-14 Basf Se Dye solar cell with improved stability

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2954308A (en) * 1956-05-21 1960-09-27 Ibm Semiconductor impurity diffusion
US3476993A (en) * 1959-09-08 1969-11-04 Gen Electric Five layer and junction bridging terminal switching device
US3573115A (en) * 1968-04-22 1971-03-30 Int Rectifier Corp Sealed tube diffusion process
US3549434A (en) * 1968-09-19 1970-12-22 Gen Electric Low resisitivity group iib-vib compounds and method of formation
US3798084A (en) * 1972-08-11 1974-03-19 Ibm Simultaneous diffusion processing

Also Published As

Publication number Publication date
SE387774B (sv) 1976-09-13
JPS5212541B2 (fr) 1977-04-07
DE2244992B2 (de) 1976-02-05
JPS4966276A (fr) 1974-06-27
BR7306340D0 (pt) 1974-07-11
GB1445432A (en) 1976-08-11
US3856586A (en) 1974-12-24
DE2244992A1 (de) 1974-04-04

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Legal Events

Date Code Title Description
ST Notification of lapse