GB1437127A - Selective irradiation of gated semiconductor devices to control gate sensitivity - Google Patents

Selective irradiation of gated semiconductor devices to control gate sensitivity

Info

Publication number
GB1437127A
GB1437127A GB3958573A GB3958573A GB1437127A GB 1437127 A GB1437127 A GB 1437127A GB 3958573 A GB3958573 A GB 3958573A GB 3958573 A GB3958573 A GB 3958573A GB 1437127 A GB1437127 A GB 1437127A
Authority
GB
United Kingdom
Prior art keywords
irradiation
gate sensitivity
control gate
devices
aug
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3958573A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB1437127A publication Critical patent/GB1437127A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
GB3958573A 1972-08-25 1973-08-15 Selective irradiation of gated semiconductor devices to control gate sensitivity Expired GB1437127A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00283685A US3840887A (en) 1972-08-25 1972-08-25 Selective irradiation of gated semiconductor devices to control gate sensitivity

Publications (1)

Publication Number Publication Date
GB1437127A true GB1437127A (en) 1976-05-26

Family

ID=23087113

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3958573A Expired GB1437127A (en) 1972-08-25 1973-08-15 Selective irradiation of gated semiconductor devices to control gate sensitivity

Country Status (5)

Country Link
US (1) US3840887A (https=)
JP (1) JPS5619110B2 (https=)
CA (1) CA990861A (https=)
GB (1) GB1437127A (https=)
IT (1) IT994679B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2836796A1 (de) * 1977-08-26 1979-03-08 Gen Electric Verfahren zum veraendern der elektrischen eigenschaften eines unijunktion- transistors sowie das nach diesem verfahren erhaltene produkt

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4177477A (en) * 1974-03-11 1979-12-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor switching device
JPS586312B2 (ja) * 1975-04-04 1983-02-03 三菱電機株式会社 ハンドウタイセイギヨソウチ
US4042947A (en) * 1976-01-06 1977-08-16 Westinghouse Electric Corporation High voltage transistor with high gain
US4076555A (en) * 1976-05-17 1978-02-28 Westinghouse Electric Corporation Irradiation for rapid turn-off reverse blocking diode thyristor
US4240844A (en) * 1978-12-22 1980-12-23 Westinghouse Electric Corp. Reducing the switching time of semiconductor devices by neutron irradiation
US4311534A (en) * 1980-06-27 1982-01-19 Westinghouse Electric Corp. Reducing the reverse recovery charge of thyristors by nuclear irradiation
US4792530A (en) * 1987-03-30 1988-12-20 International Rectifier Corporation Process for balancing forward and reverse characteristic of thyristors
JPH05160391A (ja) * 1991-12-02 1993-06-25 Sankooshiya:Kk サージ防護デバイスの保持電流制御方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5213716A (en) * 1975-07-22 1977-02-02 Canon Inc Multielectrode recorder

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2836796A1 (de) * 1977-08-26 1979-03-08 Gen Electric Verfahren zum veraendern der elektrischen eigenschaften eines unijunktion- transistors sowie das nach diesem verfahren erhaltene produkt

Also Published As

Publication number Publication date
JPS5619110B2 (https=) 1981-05-06
US3840887A (en) 1974-10-08
CA990861A (en) 1976-06-08
IT994679B (it) 1975-10-20
JPS4967582A (https=) 1974-07-01

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee