IT994679B - Procedimento per modificare la sensibilita d innesco di dispositi vi semiconduttori a porta - Google Patents
Procedimento per modificare la sensibilita d innesco di dispositi vi semiconduttori a portaInfo
- Publication number
- IT994679B IT994679B IT69547/73A IT6954773A IT994679B IT 994679 B IT994679 B IT 994679B IT 69547/73 A IT69547/73 A IT 69547/73A IT 6954773 A IT6954773 A IT 6954773A IT 994679 B IT994679 B IT 994679B
- Authority
- IT
- Italy
- Prior art keywords
- semiconducting
- modifying
- procedure
- door devices
- triggering sensitivity
- Prior art date
Links
- 230000035945 sensitivity Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00283685A US3840887A (en) | 1972-08-25 | 1972-08-25 | Selective irradiation of gated semiconductor devices to control gate sensitivity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT994679B true IT994679B (it) | 1975-10-20 |
Family
ID=23087113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT69547/73A IT994679B (it) | 1972-08-25 | 1973-08-24 | Procedimento per modificare la sensibilita d innesco di dispositi vi semiconduttori a porta |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3840887A (it) |
| JP (1) | JPS5619110B2 (it) |
| CA (1) | CA990861A (it) |
| GB (1) | GB1437127A (it) |
| IT (1) | IT994679B (it) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4177477A (en) * | 1974-03-11 | 1979-12-04 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor switching device |
| JPS586312B2 (ja) * | 1975-04-04 | 1983-02-03 | 三菱電機株式会社 | ハンドウタイセイギヨソウチ |
| US4042947A (en) * | 1976-01-06 | 1977-08-16 | Westinghouse Electric Corporation | High voltage transistor with high gain |
| US4076555A (en) * | 1976-05-17 | 1978-02-28 | Westinghouse Electric Corporation | Irradiation for rapid turn-off reverse blocking diode thyristor |
| GB1599230A (en) * | 1977-08-26 | 1981-09-30 | Gen Electric | Unijunction transistors |
| US4240844A (en) * | 1978-12-22 | 1980-12-23 | Westinghouse Electric Corp. | Reducing the switching time of semiconductor devices by neutron irradiation |
| US4311534A (en) * | 1980-06-27 | 1982-01-19 | Westinghouse Electric Corp. | Reducing the reverse recovery charge of thyristors by nuclear irradiation |
| US4792530A (en) * | 1987-03-30 | 1988-12-20 | International Rectifier Corporation | Process for balancing forward and reverse characteristic of thyristors |
| JPH05160391A (ja) * | 1991-12-02 | 1993-06-25 | Sankooshiya:Kk | サージ防護デバイスの保持電流制御方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5213716A (en) * | 1975-07-22 | 1977-02-02 | Canon Inc | Multielectrode recorder |
-
1972
- 1972-08-25 US US00283685A patent/US3840887A/en not_active Expired - Lifetime
-
1973
- 1973-08-14 CA CA178,817A patent/CA990861A/en not_active Expired
- 1973-08-15 GB GB3958573A patent/GB1437127A/en not_active Expired
- 1973-08-24 JP JP9452173A patent/JPS5619110B2/ja not_active Expired
- 1973-08-24 IT IT69547/73A patent/IT994679B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| US3840887A (en) | 1974-10-08 |
| GB1437127A (en) | 1976-05-26 |
| CA990861A (en) | 1976-06-08 |
| JPS5619110B2 (it) | 1981-05-06 |
| JPS4967582A (it) | 1974-07-01 |
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