GB1429610A - Thin film resistor and a sputtering method of producing the same - Google Patents

Thin film resistor and a sputtering method of producing the same

Info

Publication number
GB1429610A
GB1429610A GB5369974A GB5369974A GB1429610A GB 1429610 A GB1429610 A GB 1429610A GB 5369974 A GB5369974 A GB 5369974A GB 5369974 A GB5369974 A GB 5369974A GB 1429610 A GB1429610 A GB 1429610A
Authority
GB
United Kingdom
Prior art keywords
producing
thin film
same
sputtering method
film resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5369974A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of GB1429610A publication Critical patent/GB1429610A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Electronic Switches (AREA)

Abstract

1429610 Sputtering nitride of Ta-Al FUJITSU Ltd 12 Dec 1974 [27 Dec 1973] 53699/74 Heading C7F A target of Ta-Al ( 30 to 80% Ta) is sputtered in an argon-nitrogen atmosphere to form a resistive film.
GB5369974A 1973-12-27 1974-12-12 Thin film resistor and a sputtering method of producing the same Expired GB1429610A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP741927A JPS555841B2 (en) 1973-12-27 1973-12-27

Publications (1)

Publication Number Publication Date
GB1429610A true GB1429610A (en) 1976-03-24

Family

ID=11515221

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5369974A Expired GB1429610A (en) 1973-12-27 1974-12-12 Thin film resistor and a sputtering method of producing the same

Country Status (4)

Country Link
JP (1) JPS555841B2 (en)
DE (1) DE2461096C3 (en)
FR (1) FR2256515B1 (en)
GB (1) GB1429610A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0851459A2 (en) * 1996-12-27 1998-07-01 Canon Kabushiki Kaisha Charge-reducing film, image forming apparatus and method of manufacturing the same
AU742275B2 (en) * 1996-12-27 2001-12-20 Canon Kabushiki Kaisha Charge-reducing film, image forming apparatus and method of manufacturing the same

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2546675C3 (en) * 1975-10-17 1979-08-02 Siemens Ag, 1000 Berlin Und 8000 Muenchen Method of manufacturing a thin-film circuit
JPS53106496A (en) * 1977-02-28 1978-09-16 Fujitsu Ltd Exothermic element
JP4676780B2 (en) * 2005-02-16 2011-04-27 株式会社神戸製鋼所 Hard coating, laminated hard coating and method for producing the same
JP5179526B2 (en) * 2010-02-03 2013-04-10 株式会社神戸製鋼所 Hard coating, laminated hard coating and method for producing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0851459A2 (en) * 1996-12-27 1998-07-01 Canon Kabushiki Kaisha Charge-reducing film, image forming apparatus and method of manufacturing the same
EP0851459A3 (en) * 1996-12-27 1998-08-26 Canon Kabushiki Kaisha Charge-reducing film, image forming apparatus and method of manufacturing the same
AU742275B2 (en) * 1996-12-27 2001-12-20 Canon Kabushiki Kaisha Charge-reducing film, image forming apparatus and method of manufacturing the same
US6342754B1 (en) 1996-12-27 2002-01-29 Canon Kabushiki Kaisha Charge-reducing film, image forming apparatus including said film and method of manufacturing said image forming apparatus

Also Published As

Publication number Publication date
DE2461096A1 (en) 1975-07-03
JPS555841B2 (en) 1980-02-12
DE2461096C3 (en) 1978-04-06
FR2256515A1 (en) 1975-07-25
DE2461096B2 (en) 1977-07-21
FR2256515B1 (en) 1977-10-28
JPS5096897A (en) 1975-08-01

Similar Documents

Publication Publication Date Title
GB1369863A (en) Piezoelectric materials and the manufacture thereof
CA977306A (en) Transparent sputtered metal oxide films
AU524439B2 (en) Sputtered thin film thermistor
GB1514527A (en) High resistance cermet film and method of making the same
GB1400371A (en) Production of thin films of tantalum
GB1429610A (en) Thin film resistor and a sputtering method of producing the same
CA1023872A (en) Thin film resistors and contacts for circuitry
CA987631A (en) Multiple effect thin film evaporator and method
AU5070073A (en) Food compositions of reduced caloric value and method forthe production thereof
GB1458353A (en)
CA988752A (en) Normal grain growth (110) (001) textured iron-cobalt alloys
USD242694S (en) Electrooptic timepiece face
CA993115A (en) Method of making a thin film having a continuously varying thickness in at least one direction
IE37737B1 (en) Electro-photographic film and method of making same
CA1014889A (en) Sputtered dielectric thin films
GB1055259A (en) Improvements in recording instruments
USD259357S (en) Gun target
GB1249951A (en) Method and apparatus for producing a tantalum nitride film
GB1523841A (en) Process for the production of a thin-film resistor
CA1017278A (en) True replication of soft substrates
CA970556A (en) Electronic measurement and recording distances achieved in sporting events
JPS5310394A (en) Production of diamond thin films
GB1476721A (en) 4-6-methoxy-2-naphthyl-butan-2-one
CA966582A (en) Magnetic thin film shift register
GB1372067A (en) Acoustic surface wave transducers

Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years

Effective date: 19941211