GB1417032A - Cold cathode field electron emitting devices - Google Patents

Cold cathode field electron emitting devices

Info

Publication number
GB1417032A
GB1417032A GB553373A GB553373A GB1417032A GB 1417032 A GB1417032 A GB 1417032A GB 553373 A GB553373 A GB 553373A GB 553373 A GB553373 A GB 553373A GB 1417032 A GB1417032 A GB 1417032A
Authority
GB
United Kingdom
Prior art keywords
cathode
wafer
islands
coating
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB553373A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB1417032A publication Critical patent/GB1417032A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/26—Image pick-up tubes having an input of visible light and electric output
    • H01J31/48—Tubes with amplification of output effected by electron multiplier arrangements within the vacuum space
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/49—Pick-up adapted for an input of electromagnetic radiation other than visible light and having an electric output, e.g. for an input of X-rays, for an input of infrared radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/917—Plural dopants of same conductivity type in same region

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
GB553373A 1972-02-11 1973-02-05 Cold cathode field electron emitting devices Expired GB1417032A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00225517A US3814968A (en) 1972-02-11 1972-02-11 Solid state radiation sensitive field electron emitter and methods of fabrication thereof

Publications (1)

Publication Number Publication Date
GB1417032A true GB1417032A (en) 1975-12-10

Family

ID=22845197

Family Applications (1)

Application Number Title Priority Date Filing Date
GB553373A Expired GB1417032A (en) 1972-02-11 1973-02-05 Cold cathode field electron emitting devices

Country Status (7)

Country Link
US (1) US3814968A (enrdf_load_stackoverflow)
JP (1) JPS5441193B2 (enrdf_load_stackoverflow)
CA (1) CA970821A (enrdf_load_stackoverflow)
DE (1) DE2306149A1 (enrdf_load_stackoverflow)
FR (1) FR2171366B1 (enrdf_load_stackoverflow)
GB (1) GB1417032A (enrdf_load_stackoverflow)
NL (1) NL7301833A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2269048A (en) * 1992-07-03 1994-01-26 Third Generation Technology Li Photoemitters
CN1300818C (zh) * 2003-08-06 2007-02-14 北京大学 一种场发射针尖及其制备方法与应用

Families Citing this family (50)

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Publication number Priority date Publication date Assignee Title
JPS5826138B2 (ja) * 1974-02-16 1983-06-01 三菱電機株式会社 電界放出針状電極群の製造方法
US3970887A (en) * 1974-06-19 1976-07-20 Micro-Bit Corporation Micro-structure field emission electron source
JPS5436828B2 (enrdf_load_stackoverflow) * 1974-08-16 1979-11-12
US3921022A (en) * 1974-09-03 1975-11-18 Rca Corp Field emitting device and method of making same
NL7604569A (nl) * 1976-04-29 1977-11-01 Philips Nv Veldemitterinrichting en werkwijze tot het vormen daarvan.
US4147949A (en) * 1977-01-14 1979-04-03 General Electric Company Apparatus for X-ray radiography
US4156827A (en) * 1978-06-19 1979-05-29 The United States Of America As Represented By The Secretary Of The Army Matrix cathode channel image device
DE2920569A1 (de) * 1979-05-21 1980-12-04 Ibm Deutschland Elektrodenfuehrung fuer metallpapier- drucker
DE3750936T2 (de) * 1986-07-04 1995-05-18 Canon Kk Elektronen-Emitter-Vorrichtung und ihr Herstellungsverfahren.
USRE40566E1 (en) 1987-07-15 2008-11-11 Canon Kabushiki Kaisha Flat panel display including electron emitting device
USRE40062E1 (en) 1987-07-15 2008-02-12 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
USRE39633E1 (en) 1987-07-15 2007-05-15 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
US5013902A (en) * 1989-08-18 1991-05-07 Allard Edward F Microdischarge image converter
US5267884A (en) * 1990-01-29 1993-12-07 Mitsubishi Denki Kabushiki Kaisha Microminiature vacuum tube and production method
JP2968014B2 (ja) * 1990-01-29 1999-10-25 三菱電機株式会社 微小真空管及びその製造方法
US5163328A (en) * 1990-08-06 1992-11-17 Colin Electronics Co., Ltd. Miniature pressure sensor and pressure sensor arrays
US5461280A (en) * 1990-08-29 1995-10-24 Motorola Field emission device employing photon-enhanced electron emission
US5150192A (en) * 1990-09-27 1992-09-22 The United States Of America As Represented By The Secretary Of The Navy Field emitter array
US5627427A (en) * 1991-12-09 1997-05-06 Cornell Research Foundation, Inc. Silicon tip field emission cathodes
US5199917A (en) * 1991-12-09 1993-04-06 Cornell Research Foundation, Inc. Silicon tip field emission cathode arrays and fabrication thereof
US5753130A (en) * 1992-05-15 1998-05-19 Micron Technology, Inc. Method for forming a substantially uniform array of sharp tips
US5391259A (en) * 1992-05-15 1995-02-21 Micron Technology, Inc. Method for forming a substantially uniform array of sharp tips
US5515234A (en) * 1993-06-30 1996-05-07 Texas Instruments Incorporated Antistatic protector and method
JPH09503095A (ja) * 1994-06-30 1997-03-25 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 表示装置
RU2074444C1 (ru) * 1994-07-26 1997-02-27 Евгений Инвиевич Гиваргизов Матричный автоэлектронный катод и электронный прибор для оптического отображения информации
TW289864B (enrdf_load_stackoverflow) 1994-09-16 1996-11-01 Micron Display Tech Inc
US6417605B1 (en) 1994-09-16 2002-07-09 Micron Technology, Inc. Method of preventing junction leakage in field emission devices
US5975975A (en) * 1994-09-16 1999-11-02 Micron Technology, Inc. Apparatus and method for stabilization of threshold voltage in field emission displays
KR100287271B1 (ko) 1994-11-04 2001-04-16 마이크론 테크놀로지 인코포레이티드 저온 산화공정을 사용하여 이미터 사이트를 예리하게 하는 방법
US5759078A (en) * 1995-05-30 1998-06-02 Texas Instruments Incorporated Field emission device with close-packed microtip array
US5585301A (en) * 1995-07-14 1996-12-17 Micron Display Technology, Inc. Method for forming high resistance resistors for limiting cathode current in field emission displays
US5635791A (en) * 1995-08-24 1997-06-03 Texas Instruments Incorporated Field emission device with circular microtip array
US6181308B1 (en) 1995-10-16 2001-01-30 Micron Technology, Inc. Light-insensitive resistor for current-limiting of field emission displays
US5695658A (en) * 1996-03-07 1997-12-09 Micron Display Technology, Inc. Non-photolithographic etch mask for submicron features
US5952771A (en) * 1997-01-07 1999-09-14 Micron Technology, Inc. Micropoint switch for use with field emission display and method for making same
US6103133A (en) * 1997-03-19 2000-08-15 Kabushiki Kaisha Toshiba Manufacturing method of a diamond emitter vacuum micro device
US6174449B1 (en) 1998-05-14 2001-01-16 Micron Technology, Inc. Magnetically patterned etch mask
EP1098347A4 (en) * 1998-06-25 2002-04-17 Hamamatsu Photonics Kk PHOTO CATHODE
US6028322A (en) * 1998-07-22 2000-02-22 Micron Technology, Inc. Double field oxide in field emission display and method
US6235545B1 (en) 1999-02-16 2001-05-22 Micron Technology, Inc. Methods of treating regions of substantially upright silicon-comprising structures, method of treating silicon-comprising emitter structures, methods of forming field emission display devices, and cathode assemblies
US6441542B1 (en) 1999-07-21 2002-08-27 Micron Technology, Inc. Cathode emitter devices, field emission display devices, and methods of detecting infrared light
US6992698B1 (en) * 1999-08-31 2006-01-31 Micron Technology, Inc. Integrated field emission array sensor, display, and transmitter, and apparatus including same
US6469436B1 (en) * 2000-01-14 2002-10-22 Micron Technology, Inc. Radiation shielding for field emitters
WO2003043045A2 (en) * 2001-11-13 2003-05-22 Nanosciences Corporation Photocathode
FR2879342B1 (fr) * 2004-12-15 2008-09-26 Thales Sa Cathode a emission de champ, a commande optique
US20090184638A1 (en) * 2008-01-22 2009-07-23 Micron Technology, Inc. Field emitter image sensor devices, systems, and methods
US9441779B1 (en) 2015-07-01 2016-09-13 Whirlpool Corporation Split hybrid insulation structure for an appliance
US10018406B2 (en) 2015-12-28 2018-07-10 Whirlpool Corporation Multi-layer gas barrier materials for vacuum insulated structure
US10782014B2 (en) 2016-11-11 2020-09-22 Habib Technologies LLC Plasmonic energy conversion device for vapor generation
EP3758041A1 (en) * 2019-06-26 2020-12-30 Hamamatsu Photonics K.K. Electron tube and imaging device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE667169A (enrdf_load_stackoverflow) * 1964-07-21
US3453478A (en) * 1966-05-31 1969-07-01 Stanford Research Inst Needle-type electron source
US3500102A (en) * 1967-05-15 1970-03-10 Us Army Thin electron tube with electron emitters at intersections of crossed conductors
US3466485A (en) * 1967-09-21 1969-09-09 Bell Telephone Labor Inc Cold cathode emitter having a mosaic of closely spaced needles
US3665241A (en) * 1970-07-13 1972-05-23 Stanford Research Inst Field ionizer and field emission cathode structures and methods of production

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2269048A (en) * 1992-07-03 1994-01-26 Third Generation Technology Li Photoemitters
GB2269048B (en) * 1992-07-03 1995-10-04 Third Generation Technology Li Photoemitters
CN1300818C (zh) * 2003-08-06 2007-02-14 北京大学 一种场发射针尖及其制备方法与应用

Also Published As

Publication number Publication date
FR2171366B1 (enrdf_load_stackoverflow) 1976-11-05
DE2306149A1 (de) 1973-08-16
JPS5441193B2 (enrdf_load_stackoverflow) 1979-12-07
US3814968A (en) 1974-06-04
CA970821A (en) 1975-07-08
FR2171366A1 (enrdf_load_stackoverflow) 1973-09-21
JPS4897473A (enrdf_load_stackoverflow) 1973-12-12
NL7301833A (enrdf_load_stackoverflow) 1973-08-14

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee