GB1414952A - Apparatus for growing crystals from hydrothermal solutions - Google Patents

Apparatus for growing crystals from hydrothermal solutions

Info

Publication number
GB1414952A
GB1414952A GB37974A GB37974A GB1414952A GB 1414952 A GB1414952 A GB 1414952A GB 37974 A GB37974 A GB 37974A GB 37974 A GB37974 A GB 37974A GB 1414952 A GB1414952 A GB 1414952A
Authority
GB
United Kingdom
Prior art keywords
autoclave
zone
crystallisation
enclosed
sections
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB37974A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
V NII SINTEZA MINERALNOGO SYRY
Original Assignee
V NII SINTEZA MINERALNOGO SYRY
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by V NII SINTEZA MINERALNOGO SYRY filed Critical V NII SINTEZA MINERALNOGO SYRY
Priority to GB37974A priority Critical patent/GB1414952A/en
Publication of GB1414952A publication Critical patent/GB1414952A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/18—Quartz

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

1414952 Crystal growing apparatus VSESOJUZNY ORDENA TRUDOVOGO KRASNOGO ZNAMENI NAUCHNO-ISSLEDOVATELSKY INSTITUT SINTEZA MINERALNOGO SYRYA 4 Jan 1974 379/74 Heading BIG Crystals are grown from solutions hydrothermally in a vertically extending autoclave having a crystallisation zone in its top portion and a supply zone in its bottom portion, the autoclave is surrounded by a heat insulation layer, provided with a system of heating elements and enclosed in a thermostatically controlled chamber which is divided into sections each having a heating and thermostatic control system so as to maintain in each section constant and different temperatures in the crystallisation and supply zones of the autoclave. As shown in Fig. 1 the autoclave 1 comprises a crystallisation zone 2, a supply zone 3, heat insulation layers 5 and 6, heating elements 7 enclosed in a thermostatically controlled chamber divided into sections 8, 9 and 10, each of which being provided with a control system 20-29 for maintaining a constant temperature on walls 15 or spaces 17.
GB37974A 1974-01-04 1974-01-04 Apparatus for growing crystals from hydrothermal solutions Expired GB1414952A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB37974A GB1414952A (en) 1974-01-04 1974-01-04 Apparatus for growing crystals from hydrothermal solutions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB37974A GB1414952A (en) 1974-01-04 1974-01-04 Apparatus for growing crystals from hydrothermal solutions

Publications (1)

Publication Number Publication Date
GB1414952A true GB1414952A (en) 1975-11-19

Family

ID=9703388

Family Applications (1)

Application Number Title Priority Date Filing Date
GB37974A Expired GB1414952A (en) 1974-01-04 1974-01-04 Apparatus for growing crystals from hydrothermal solutions

Country Status (1)

Country Link
GB (1) GB1414952A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117568915A (en) * 2023-10-20 2024-02-20 深圳市中金岭南有色金属股份有限公司韶关冶炼厂 Controllable indium phosphide monocrystal growth device and growth method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117568915A (en) * 2023-10-20 2024-02-20 深圳市中金岭南有色金属股份有限公司韶关冶炼厂 Controllable indium phosphide monocrystal growth device and growth method

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee