GB1414228A - Semiconductor storage devices - Google Patents

Semiconductor storage devices

Info

Publication number
GB1414228A
GB1414228A GB1091073A GB1091073A GB1414228A GB 1414228 A GB1414228 A GB 1414228A GB 1091073 A GB1091073 A GB 1091073A GB 1091073 A GB1091073 A GB 1091073A GB 1414228 A GB1414228 A GB 1414228A
Authority
GB
United Kingdom
Prior art keywords
electrode
electrodes
storage
charge
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1091073A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1414228A publication Critical patent/GB1414228A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Led Devices (AREA)
  • Semiconductor Memories (AREA)
  • Facsimile Heads (AREA)
GB1091073A 1972-04-25 1973-03-06 Semiconductor storage devices Expired GB1414228A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24730072A 1972-04-25 1972-04-25

Publications (1)

Publication Number Publication Date
GB1414228A true GB1414228A (en) 1975-11-19

Family

ID=22934384

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1091073A Expired GB1414228A (en) 1972-04-25 1973-03-06 Semiconductor storage devices

Country Status (10)

Country Link
JP (1) JPS5212073B2 (enrdf_load_stackoverflow)
CA (1) CA1003106A (enrdf_load_stackoverflow)
CH (1) CH546461A (enrdf_load_stackoverflow)
DE (1) DE2319714A1 (enrdf_load_stackoverflow)
ES (1) ES413258A1 (enrdf_load_stackoverflow)
FR (1) FR2181850B1 (enrdf_load_stackoverflow)
GB (1) GB1414228A (enrdf_load_stackoverflow)
IT (1) IT979035B (enrdf_load_stackoverflow)
NL (1) NL7305263A (enrdf_load_stackoverflow)
SE (1) SE389573B (enrdf_load_stackoverflow)

Cited By (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1351307A1 (fr) * 2002-03-28 2003-10-08 Innovative Silicon SA Procédé de commande d'un dispositif semi-conducteur
US6873539B1 (en) 2001-06-18 2005-03-29 Pierre Fazan Semiconductor device
US6912150B2 (en) 2003-05-13 2005-06-28 Lionel Portman Reference current generator, and method of programming, adjusting and/or operating same
US6982918B2 (en) 2002-04-18 2006-01-03 Pierre Fazan Data storage device and refreshing method for use with such device
US7061050B2 (en) 2002-04-18 2006-06-13 Innovative Silicon S.A. Semiconductor device utilizing both fully and partially depleted devices
US7085156B2 (en) 2003-05-13 2006-08-01 Innovative Silicon S.A. Semiconductor memory device and method of operating same
US7085153B2 (en) 2003-05-13 2006-08-01 Innovative Silicon S.A. Semiconductor memory cell, array, architecture and device, and method of operating same
US7177175B2 (en) 2003-09-24 2007-02-13 Innovative Silicon S.A. Low power programming technique for a floating body memory transistor, memory cell, and memory array
US7251164B2 (en) 2004-11-10 2007-07-31 Innovative Silicon S.A. Circuitry for and method of improving statistical distribution of integrated circuits
US7301803B2 (en) 2004-12-22 2007-11-27 Innovative Silicon S.A. Bipolar reading technique for a memory cell having an electrically floating body transistor
US7301838B2 (en) 2004-12-13 2007-11-27 Innovative Silicon S.A. Sense amplifier circuitry and architecture to write data into and/or read from memory cells
US7335934B2 (en) 2003-07-22 2008-02-26 Innovative Silicon S.A. Integrated circuit device, and method of fabricating same
US7355916B2 (en) 2005-09-19 2008-04-08 Innovative Silicon S.A. Method and circuitry to generate a reference current for reading a memory cell, and device implementing same
US7476939B2 (en) 2004-11-04 2009-01-13 Innovative Silicon Isi Sa Memory cell having an electrically floating body transistor and programming technique therefor
US7492632B2 (en) 2006-04-07 2009-02-17 Innovative Silicon Isi Sa Memory array having a programmable word length, and method of operating same
US7542345B2 (en) 2006-02-16 2009-06-02 Innovative Silicon Isi Sa Multi-bit memory cell having electrically floating body transistor, and method of programming and reading same
US7542340B2 (en) 2006-07-11 2009-06-02 Innovative Silicon Isi Sa Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
US7606066B2 (en) 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US7606098B2 (en) 2006-04-18 2009-10-20 Innovative Silicon Isi Sa Semiconductor memory array architecture with grouped memory cells, and method of controlling same
US7683430B2 (en) 2005-12-19 2010-03-23 Innovative Silicon Isi Sa Electrically floating body memory cell and array, and method of operating or controlling same
US7924630B2 (en) 2008-10-15 2011-04-12 Micron Technology, Inc. Techniques for simultaneously driving a plurality of source lines
US7933142B2 (en) 2006-05-02 2011-04-26 Micron Technology, Inc. Semiconductor memory cell and array using punch-through to program and read same
US7933140B2 (en) 2008-10-02 2011-04-26 Micron Technology, Inc. Techniques for reducing a voltage swing
US7947543B2 (en) 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7957206B2 (en) 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US8014195B2 (en) 2008-02-06 2011-09-06 Micron Technology, Inc. Single transistor memory cell
US8064274B2 (en) 2007-05-30 2011-11-22 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8069377B2 (en) 2006-06-26 2011-11-29 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating the same
US8085594B2 (en) 2007-06-01 2011-12-27 Micron Technology, Inc. Reading technique for memory cell with electrically floating body transistor
US8139418B2 (en) 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
US8174881B2 (en) 2009-11-24 2012-05-08 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor device
US8189376B2 (en) 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US8194487B2 (en) 2007-09-17 2012-06-05 Micron Technology, Inc. Refreshing data of memory cells with electrically floating body transistors
US8199595B2 (en) 2009-09-04 2012-06-12 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8213226B2 (en) 2008-12-05 2012-07-03 Micron Technology, Inc. Vertical transistor memory cell and array
US8223574B2 (en) 2008-11-05 2012-07-17 Micron Technology, Inc. Techniques for block refreshing a semiconductor memory device
US8264041B2 (en) 2007-01-26 2012-09-11 Micron Technology, Inc. Semiconductor device with electrically floating body
US8310893B2 (en) 2009-12-16 2012-11-13 Micron Technology, Inc. Techniques for reducing impact of array disturbs in a semiconductor memory device
US8315099B2 (en) 2009-07-27 2012-11-20 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8319294B2 (en) 2009-02-18 2012-11-27 Micron Technology, Inc. Techniques for providing a source line plane
US8349662B2 (en) 2007-12-11 2013-01-08 Micron Technology, Inc. Integrated circuit having memory cell array, and method of manufacturing same
US8369177B2 (en) 2010-03-05 2013-02-05 Micron Technology, Inc. Techniques for reading from and/or writing to a semiconductor memory device
US8411524B2 (en) 2010-05-06 2013-04-02 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
US8411513B2 (en) 2010-03-04 2013-04-02 Micron Technology, Inc. Techniques for providing a semiconductor memory device having hierarchical bit lines
US8416636B2 (en) 2010-02-12 2013-04-09 Micron Technology, Inc. Techniques for controlling a semiconductor memory device
US8498157B2 (en) 2009-05-22 2013-07-30 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8508994B2 (en) 2009-04-30 2013-08-13 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8518774B2 (en) 2007-03-29 2013-08-27 Micron Technology, Inc. Manufacturing process for zero-capacitor random access memory circuits
US8531878B2 (en) 2011-05-17 2013-09-10 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8536628B2 (en) 2007-11-29 2013-09-17 Micron Technology, Inc. Integrated circuit having memory cell array including barriers, and method of manufacturing same
US8537610B2 (en) 2009-07-10 2013-09-17 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8547738B2 (en) 2010-03-15 2013-10-01 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8576631B2 (en) 2010-03-04 2013-11-05 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8710566B2 (en) 2009-03-04 2014-04-29 Micron Technology, Inc. Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
US8748959B2 (en) 2009-03-31 2014-06-10 Micron Technology, Inc. Semiconductor memory device
US8773933B2 (en) 2012-03-16 2014-07-08 Micron Technology, Inc. Techniques for accessing memory cells
US9559216B2 (en) 2011-06-06 2017-01-31 Micron Technology, Inc. Semiconductor memory device and method for biasing same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5428578A (en) * 1977-08-08 1979-03-03 Clarion Co Ltd Semiconductor memory

Cited By (127)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7239549B2 (en) 2001-06-18 2007-07-03 Innovative Silicon S.A. Semiconductor device
US6873539B1 (en) 2001-06-18 2005-03-29 Pierre Fazan Semiconductor device
US7541616B2 (en) 2001-06-18 2009-06-02 Innovative Silicon Isi Sa Semiconductor device
US6925006B2 (en) 2001-06-18 2005-08-02 Innovative Silicon S.A. Semiconductor device
US6930918B2 (en) 2001-06-18 2005-08-16 Innovative Silicon S.A. Semiconductor device
US6934186B2 (en) 2001-06-18 2005-08-23 Innovative Silicon S.A. Semiconductor device
US6937516B2 (en) 2001-06-18 2005-08-30 Innovative Silicon S.A. Semiconductor device
US6969662B2 (en) 2001-06-18 2005-11-29 Pierre Fazan Semiconductor device
US7732816B2 (en) 2001-06-18 2010-06-08 Innovative Silicon Isi Sa Semiconductor device
US7280399B2 (en) 2001-06-18 2007-10-09 Innovative Silicon S.A. Semiconductor device
EP1351307A1 (fr) * 2002-03-28 2003-10-08 Innovative Silicon SA Procédé de commande d'un dispositif semi-conducteur
US7061050B2 (en) 2002-04-18 2006-06-13 Innovative Silicon S.A. Semiconductor device utilizing both fully and partially depleted devices
US7170807B2 (en) 2002-04-18 2007-01-30 Innovative Silicon S.A. Data storage device and refreshing method for use with such device
US7514748B2 (en) 2002-04-18 2009-04-07 Innovative Silicon Isi Sa Semiconductor device
US7342842B2 (en) 2002-04-18 2008-03-11 Innovative Silicon, S.A. Data storage device and refreshing method for use with such device
US6982918B2 (en) 2002-04-18 2006-01-03 Pierre Fazan Data storage device and refreshing method for use with such device
US7085153B2 (en) 2003-05-13 2006-08-01 Innovative Silicon S.A. Semiconductor memory cell, array, architecture and device, and method of operating same
US7359229B2 (en) 2003-05-13 2008-04-15 Innovative Silicon S.A. Semiconductor memory device and method of operating same
US7187581B2 (en) 2003-05-13 2007-03-06 Innovative Silicon S.A. Semiconductor memory device and method of operating same
US7085156B2 (en) 2003-05-13 2006-08-01 Innovative Silicon S.A. Semiconductor memory device and method of operating same
US7733693B2 (en) 2003-05-13 2010-06-08 Innovative Silicon Isi Sa Semiconductor memory device and method of operating same
US6980461B2 (en) 2003-05-13 2005-12-27 Innovative Silicon S.A. Reference current generator, and method of programming, adjusting and/or operating same
US6912150B2 (en) 2003-05-13 2005-06-28 Lionel Portman Reference current generator, and method of programming, adjusting and/or operating same
US7736959B2 (en) 2003-07-22 2010-06-15 Innovative Silicon Isi Sa Integrated circuit device, and method of fabricating same
US7335934B2 (en) 2003-07-22 2008-02-26 Innovative Silicon S.A. Integrated circuit device, and method of fabricating same
US7184298B2 (en) 2003-09-24 2007-02-27 Innovative Silicon S.A. Low power programming technique for a floating body memory transistor, memory cell, and memory array
US7177175B2 (en) 2003-09-24 2007-02-13 Innovative Silicon S.A. Low power programming technique for a floating body memory transistor, memory cell, and memory array
US7476939B2 (en) 2004-11-04 2009-01-13 Innovative Silicon Isi Sa Memory cell having an electrically floating body transistor and programming technique therefor
US7251164B2 (en) 2004-11-10 2007-07-31 Innovative Silicon S.A. Circuitry for and method of improving statistical distribution of integrated circuits
US7486563B2 (en) 2004-12-13 2009-02-03 Innovative Silicon Isi Sa Sense amplifier circuitry and architecture to write data into and/or read from memory cells
US7301838B2 (en) 2004-12-13 2007-11-27 Innovative Silicon S.A. Sense amplifier circuitry and architecture to write data into and/or read from memory cells
US7477540B2 (en) 2004-12-22 2009-01-13 Innovative Silicon Isi Sa Bipolar reading technique for a memory cell having an electrically floating body transistor
US7301803B2 (en) 2004-12-22 2007-11-27 Innovative Silicon S.A. Bipolar reading technique for a memory cell having an electrically floating body transistor
US8873283B2 (en) 2005-09-07 2014-10-28 Micron Technology, Inc. Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US10418091B2 (en) 2005-09-07 2019-09-17 Ovonyx Memory Technology, Llc Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US7606066B2 (en) 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US11031069B2 (en) 2005-09-07 2021-06-08 Ovonyx Memory Technology, Llc Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US7499358B2 (en) 2005-09-19 2009-03-03 Innovative Silicon Isi Sa Method and circuitry to generate a reference current for reading a memory cell, and device implementing same
US7355916B2 (en) 2005-09-19 2008-04-08 Innovative Silicon S.A. Method and circuitry to generate a reference current for reading a memory cell, and device implementing same
US7683430B2 (en) 2005-12-19 2010-03-23 Innovative Silicon Isi Sa Electrically floating body memory cell and array, and method of operating or controlling same
US7542345B2 (en) 2006-02-16 2009-06-02 Innovative Silicon Isi Sa Multi-bit memory cell having electrically floating body transistor, and method of programming and reading same
US7940559B2 (en) 2006-04-07 2011-05-10 Micron Technology, Inc. Memory array having a programmable word length, and method of operating same
US7492632B2 (en) 2006-04-07 2009-02-17 Innovative Silicon Isi Sa Memory array having a programmable word length, and method of operating same
US8134867B2 (en) 2006-04-07 2012-03-13 Micron Technology, Inc. Memory array having a programmable word length, and method of operating same
US7606098B2 (en) 2006-04-18 2009-10-20 Innovative Silicon Isi Sa Semiconductor memory array architecture with grouped memory cells, and method of controlling same
US7933142B2 (en) 2006-05-02 2011-04-26 Micron Technology, Inc. Semiconductor memory cell and array using punch-through to program and read same
US8295078B2 (en) 2006-05-02 2012-10-23 Micron Technology, Inc. Semiconductor memory cell and array using punch-through to program and read same
US8069377B2 (en) 2006-06-26 2011-11-29 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating the same
US8402326B2 (en) 2006-06-26 2013-03-19 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating same
US7542340B2 (en) 2006-07-11 2009-06-02 Innovative Silicon Isi Sa Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
US7969779B2 (en) 2006-07-11 2011-06-28 Micron Technology, Inc. Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
US8395937B2 (en) 2006-07-11 2013-03-12 Micron Technology, Inc. Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
US8492209B2 (en) 2007-01-26 2013-07-23 Micron Technology, Inc. Semiconductor device with electrically floating body
US8796770B2 (en) 2007-01-26 2014-08-05 Micron Technology, Inc. Semiconductor device with electrically floating body
US8264041B2 (en) 2007-01-26 2012-09-11 Micron Technology, Inc. Semiconductor device with electrically floating body
US9276000B2 (en) 2007-03-29 2016-03-01 Micron Technology, Inc. Manufacturing process for zero-capacitor random access memory circuits
US8518774B2 (en) 2007-03-29 2013-08-27 Micron Technology, Inc. Manufacturing process for zero-capacitor random access memory circuits
US8064274B2 (en) 2007-05-30 2011-11-22 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US9257155B2 (en) 2007-05-30 2016-02-09 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8659956B2 (en) 2007-05-30 2014-02-25 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8085594B2 (en) 2007-06-01 2011-12-27 Micron Technology, Inc. Reading technique for memory cell with electrically floating body transistor
US8659948B2 (en) 2007-06-01 2014-02-25 Micron Technology, Inc. Techniques for reading a memory cell with electrically floating body transistor
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US8797819B2 (en) 2007-09-17 2014-08-05 Micron Technology, Inc. Refreshing data of memory cells with electrically floating body transistors
US8446794B2 (en) 2007-09-17 2013-05-21 Micron Technology, Inc. Refreshing data of memory cells with electrically floating body transistors
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US10304837B2 (en) 2007-11-29 2019-05-28 Ovonyx Memory Technology, Llc Integrated circuit having memory cell array including barriers, and method of manufacturing same
US11081486B2 (en) 2007-11-29 2021-08-03 Ovonyx Memory Technology, Llc Integrated circuit having memory cell array including barriers, and method of manufacturing same
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US8189376B2 (en) 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US8274849B2 (en) 2008-04-04 2012-09-25 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US7957206B2 (en) 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US8790968B2 (en) 2008-09-25 2014-07-29 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7947543B2 (en) 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US9553186B2 (en) 2008-09-25 2017-01-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
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US9064730B2 (en) 2009-03-04 2015-06-23 Micron Technology, Inc. Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
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US8139418B2 (en) 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
US8861247B2 (en) 2009-04-27 2014-10-14 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
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US8400811B2 (en) 2009-04-27 2013-03-19 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device having ganged carrier injection lines
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US9240496B2 (en) 2009-04-30 2016-01-19 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8792276B2 (en) 2009-04-30 2014-07-29 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8508994B2 (en) 2009-04-30 2013-08-13 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8498157B2 (en) 2009-05-22 2013-07-30 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8982633B2 (en) 2009-05-22 2015-03-17 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8537610B2 (en) 2009-07-10 2013-09-17 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8817534B2 (en) 2009-07-10 2014-08-26 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9331083B2 (en) 2009-07-10 2016-05-03 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9679612B2 (en) 2009-07-27 2017-06-13 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8947965B2 (en) 2009-07-27 2015-02-03 Micron Technology Inc. Techniques for providing a direct injection semiconductor memory device
US8964461B2 (en) 2009-07-27 2015-02-24 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
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US8315099B2 (en) 2009-07-27 2012-11-20 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8199595B2 (en) 2009-09-04 2012-06-12 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8174881B2 (en) 2009-11-24 2012-05-08 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor device
US8760906B2 (en) 2009-11-24 2014-06-24 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor memory device
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Also Published As

Publication number Publication date
DE2319714A1 (de) 1973-11-15
CH546461A (de) 1974-02-28
JPS4922882A (enrdf_load_stackoverflow) 1974-02-28
SE389573B (sv) 1976-11-08
ES413258A1 (es) 1976-01-01
CA1003106A (en) 1977-01-04
IT979035B (it) 1974-09-30
JPS5212073B2 (enrdf_load_stackoverflow) 1977-04-04
FR2181850A1 (enrdf_load_stackoverflow) 1973-12-07
NL7305263A (enrdf_load_stackoverflow) 1973-10-29
FR2181850B1 (enrdf_load_stackoverflow) 1978-05-26

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