GB1406760A - Depositing semiconductor material - Google Patents
Depositing semiconductor materialInfo
- Publication number
- GB1406760A GB1406760A GB2355473A GB2355473A GB1406760A GB 1406760 A GB1406760 A GB 1406760A GB 2355473 A GB2355473 A GB 2355473A GB 2355473 A GB2355473 A GB 2355473A GB 1406760 A GB1406760 A GB 1406760A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- hydride
- conductor
- semi
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000000151 deposition Methods 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- 150000004678 hydrides Chemical class 0.000 abstract 4
- 230000008021 deposition Effects 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 150000004820 halides Chemical class 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910000039 hydrogen halide Inorganic materials 0.000 abstract 1
- 239000012433 hydrogen halide Substances 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 238000001947 vapour-phase growth Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7206877A NL7206877A (enrdf_load_stackoverflow) | 1972-05-20 | 1972-05-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1406760A true GB1406760A (en) | 1975-09-17 |
Family
ID=19816097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2355473A Expired GB1406760A (en) | 1972-05-20 | 1973-05-17 | Depositing semiconductor material |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5225295B2 (enrdf_load_stackoverflow) |
| CA (1) | CA990626A (enrdf_load_stackoverflow) |
| DE (1) | DE2324127A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2185445B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1406760A (enrdf_load_stackoverflow) |
| IT (1) | IT985922B (enrdf_load_stackoverflow) |
| NL (1) | NL7206877A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0045600A1 (en) * | 1980-07-28 | 1982-02-10 | Monsanto Company | Improved method for producing semiconductor grade silicon |
| GB2164357A (en) * | 1984-09-13 | 1986-03-19 | Toshiba Ceramics Co | Susceptor for supporting a silicon wafer |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3725598B2 (ja) * | 1996-01-12 | 2005-12-14 | 東芝セラミックス株式会社 | エピタキシャルウェハの製造方法 |
| JP2006070342A (ja) * | 2004-09-03 | 2006-03-16 | Sumitomo Electric Ind Ltd | 気相成膜装置、サセプタおよび気相成膜方法 |
| JP6333646B2 (ja) | 2014-07-08 | 2018-05-30 | ビーエーエスエフ コーティングス ゲゼルシャフト ミット ベシュレンクテル ハフツングＢＡＳＦ Ｃｏａｔｉｎｇｓ ＧｍｂＨ | 二液型塗料組成物及びそれを用いた複層塗膜形成方法 |
-
1972
- 1972-05-20 NL NL7206877A patent/NL7206877A/xx unknown
-
1973
- 1973-05-12 DE DE19732324127 patent/DE2324127A1/de not_active Withdrawn
- 1973-05-15 FR FR7317471A patent/FR2185445B1/fr not_active Expired
- 1973-05-15 CA CA171,410A patent/CA990626A/en not_active Expired
- 1973-05-17 IT IT6843873A patent/IT985922B/it active
- 1973-05-17 GB GB2355473A patent/GB1406760A/en not_active Expired
- 1973-05-17 JP JP5420073A patent/JPS5225295B2/ja not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0045600A1 (en) * | 1980-07-28 | 1982-02-10 | Monsanto Company | Improved method for producing semiconductor grade silicon |
| GB2164357A (en) * | 1984-09-13 | 1986-03-19 | Toshiba Ceramics Co | Susceptor for supporting a silicon wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2185445A1 (enrdf_load_stackoverflow) | 1974-01-04 |
| JPS5225295B2 (enrdf_load_stackoverflow) | 1977-07-06 |
| DE2324127A1 (de) | 1973-12-06 |
| JPS4943572A (enrdf_load_stackoverflow) | 1974-04-24 |
| FR2185445B1 (enrdf_load_stackoverflow) | 1976-06-11 |
| NL7206877A (enrdf_load_stackoverflow) | 1973-11-22 |
| IT985922B (it) | 1974-12-30 |
| CA990626A (en) | 1976-06-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4485128A (en) | Bandgap control in amorphous semiconductors | |
| GB1379414A (en) | Forming an epitaxial layer on a semiconductor substrate | |
| GB1459839A (en) | Dual growth rate method of depositing epitaxial crystalline layers | |
| GB1320773A (en) | Method for forming epitaxial crystals or wafers in selected regions of substraes | |
| GB1299237A (en) | Composite structure of zinc oxide deposited epitaxially on sapphire | |
| GB1173330A (en) | A method for Forming Electrode in Semiconductor Devices | |
| GB1406760A (en) | Depositing semiconductor material | |
| GB1443849A (en) | Method of forming a semiconductor layer by vapour growth | |
| GB1328170A (en) | Epitaxial deposition | |
| GB1226829A (enrdf_load_stackoverflow) | ||
| GB1342542A (en) | Epitaxial deposition | |
| GB1229128A (enrdf_load_stackoverflow) | ||
| GB1255576A (en) | Improvements in or relating to the production of epitaxially grown layers of semiconductor material | |
| JPS53126263A (en) | Method of epitaxially growing gallium arsenide layer on gallium arsenide body | |
| Kikkawa et al. | Effective Si planar doping of GaAs by MOVPE using tertiarybutylarsine | |
| GB1037146A (en) | Improvements in or relating to processes for manufacturing semiconductor cyrstals having at least two layers of different conductivity and/or conductivity type | |
| GB1386900A (en) | Semiconductor layers | |
| GB1518564A (en) | Method for the low pressure pyrolytic deposition of silicon nitride | |
| US3337375A (en) | Semiconductor method and device | |
| JPS57192017A (en) | Epitaxial growing method | |
| JPS5710982A (en) | Amorphous semiconductor thin film | |
| GB1056720A (en) | Improved method of epitaxially vapour depositing semiconductor material | |
| JPS5553415A (en) | Selective epitaxial growing | |
| GB1322347A (en) | Methods of depositing semiconductor material | |
| GB1436999A (en) | Method of depositing aluminium on the surface of a semi- conductor wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |