JPS4943572A - - Google Patents

Info

Publication number
JPS4943572A
JPS4943572A JP5420073A JP5420073A JPS4943572A JP S4943572 A JPS4943572 A JP S4943572A JP 5420073 A JP5420073 A JP 5420073A JP 5420073 A JP5420073 A JP 5420073A JP S4943572 A JPS4943572 A JP S4943572A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5420073A
Other languages
Japanese (ja)
Other versions
JPS5225295B2 (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4943572A publication Critical patent/JPS4943572A/ja
Publication of JPS5225295B2 publication Critical patent/JPS5225295B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP5420073A 1972-05-20 1973-05-17 Expired JPS5225295B2 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7206877A NL7206877A (enrdf_load_stackoverflow) 1972-05-20 1972-05-20

Publications (2)

Publication Number Publication Date
JPS4943572A true JPS4943572A (enrdf_load_stackoverflow) 1974-04-24
JPS5225295B2 JPS5225295B2 (enrdf_load_stackoverflow) 1977-07-06

Family

ID=19816097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5420073A Expired JPS5225295B2 (enrdf_load_stackoverflow) 1972-05-20 1973-05-17

Country Status (7)

Country Link
JP (1) JPS5225295B2 (enrdf_load_stackoverflow)
CA (1) CA990626A (enrdf_load_stackoverflow)
DE (1) DE2324127A1 (enrdf_load_stackoverflow)
FR (1) FR2185445B1 (enrdf_load_stackoverflow)
GB (1) GB1406760A (enrdf_load_stackoverflow)
IT (1) IT985922B (enrdf_load_stackoverflow)
NL (1) NL7206877A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006070342A (ja) * 2004-09-03 2006-03-16 Sumitomo Electric Ind Ltd 気相成膜装置、サセプタおよび気相成膜方法
KR20170030554A (ko) 2014-07-08 2017-03-17 바스프 코팅스 게엠베하 2성분 페인트 조성물 및 그를 사용한 다층 코팅 형성 방법

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3166609D1 (en) * 1980-07-28 1984-11-15 Monsanto Co Improved method for producing semiconductor grade silicon
JPS6169116A (ja) * 1984-09-13 1986-04-09 Toshiba Ceramics Co Ltd シリコンウエハ−の連続ｃｖｄコ−テイング用サセプター
JP3725598B2 (ja) * 1996-01-12 2005-12-14 東芝セラミックス株式会社 エピタキシャルウェハの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006070342A (ja) * 2004-09-03 2006-03-16 Sumitomo Electric Ind Ltd 気相成膜装置、サセプタおよび気相成膜方法
KR20170030554A (ko) 2014-07-08 2017-03-17 바스프 코팅스 게엠베하 2성분 페인트 조성물 및 그를 사용한 다층 코팅 형성 방법

Also Published As

Publication number Publication date
JPS5225295B2 (enrdf_load_stackoverflow) 1977-07-06
FR2185445A1 (enrdf_load_stackoverflow) 1974-01-04
GB1406760A (en) 1975-09-17
NL7206877A (enrdf_load_stackoverflow) 1973-11-22
FR2185445B1 (enrdf_load_stackoverflow) 1976-06-11
CA990626A (en) 1976-06-08
IT985922B (it) 1974-12-30
DE2324127A1 (de) 1973-12-06

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