GB1403913A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1403913A
GB1403913A GB5183672A GB5183672A GB1403913A GB 1403913 A GB1403913 A GB 1403913A GB 5183672 A GB5183672 A GB 5183672A GB 5183672 A GB5183672 A GB 5183672A GB 1403913 A GB1403913 A GB 1403913A
Authority
GB
United Kingdom
Prior art keywords
layer
silica
wafer
tin oxide
thick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5183672A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP46090139A external-priority patent/JPS5226437B2/ja
Priority claimed from JP47025021A external-priority patent/JPS5113631B2/ja
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Publication of GB1403913A publication Critical patent/GB1403913A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/62Capacitors having potential barriers
    • H10D1/66Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/103Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Formation Of Insulating Films (AREA)
  • Light Receiving Elements (AREA)
GB5183672A 1971-11-10 1972-11-09 Semiconductor device Expired GB1403913A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP46090139A JPS5226437B2 (enrdf_load_stackoverflow) 1971-11-10 1971-11-10
JP47025021A JPS5113631B2 (enrdf_load_stackoverflow) 1972-03-10 1972-03-10

Publications (1)

Publication Number Publication Date
GB1403913A true GB1403913A (en) 1975-08-28

Family

ID=26362623

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5183672A Expired GB1403913A (en) 1971-11-10 1972-11-09 Semiconductor device

Country Status (4)

Country Link
CA (1) CA992187A (enrdf_load_stackoverflow)
DE (1) DE2255025C3 (enrdf_load_stackoverflow)
FR (1) FR2159442B1 (enrdf_load_stackoverflow)
GB (1) GB1403913A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3528108A1 (de) * 1985-08-06 1987-02-19 Sengewald Karl H Verpackung, insbesondere vakuumdichte verpackung fuer leicht verderbliche lebensmittel
DE4116695C2 (de) * 1990-05-23 1994-11-24 Mitsubishi Electric Corp Tandem-Solarzelle und Herstellungsverfahren für dieselbe
US5288338A (en) * 1990-05-23 1994-02-22 Mitsubishi Denki Kabushiki Kaisha Solar cell and method of producing the solar cell

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1452611A (fr) * 1963-10-30 1966-04-15 Olivetti & Co Spa Dispositif électronique à l'état solide
US3546540A (en) * 1969-01-27 1970-12-08 Conductron Corp Control system

Also Published As

Publication number Publication date
DE2255025A1 (de) 1973-05-17
DE2255025C3 (de) 1980-09-25
CA992187A (en) 1976-06-29
DE2255025B2 (de) 1976-07-08
FR2159442A1 (enrdf_load_stackoverflow) 1973-06-22
FR2159442B1 (enrdf_load_stackoverflow) 1977-09-02

Similar Documents

Publication Publication Date Title
Deal et al. Characteristics of the surface‐state charge (Qss) of thermally oxidized silicon
US3177100A (en) Depositing epitaxial layer of silicon from a vapor mixture of sih4 and h3
US4261095A (en) Self aligned schottky guard ring
US3386163A (en) Method for fabricating insulated-gate field effect transistor
US3492174A (en) Method of making a semiconductor device
US4344985A (en) Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer
US3745072A (en) Semiconductor device fabrication
US2974073A (en) Method of making phosphorus diffused silicon semiconductor devices
GB1422033A (en) Method of manufacturing a semiconductor device
US3746587A (en) Method of making semiconductor diodes
US3535600A (en) Mos varactor diode
US4001873A (en) Semiconductor device
US3410736A (en) Method of forming a glass coating on semiconductors
US3447238A (en) Method of making a field effect transistor by diffusion,coating with an oxide and placing a metal layer on the oxide
GB1356710A (en) Semiconductor resistor
US3541676A (en) Method of forming field-effect transistors utilizing doped insulators as activator source
GB1403913A (en) Semiconductor device
JPS6459866A (en) Manufacture of mos transistor
US3471922A (en) Monolithic integrated circuitry with dielectric isolated functional regions
US4696095A (en) Process for isolation using self-aligned diffusion process
GB1461943A (en) Semi-conductor devices
US3303069A (en) Method of manufacturing semiconductor devices
GB968106A (en) Improvements in or relating to semiconductor devices
US4099997A (en) Method of fabricating a semiconductor device
US3457125A (en) Passivation of semiconductor devices

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee