GB1403913A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB1403913A GB1403913A GB5183672A GB5183672A GB1403913A GB 1403913 A GB1403913 A GB 1403913A GB 5183672 A GB5183672 A GB 5183672A GB 5183672 A GB5183672 A GB 5183672A GB 1403913 A GB1403913 A GB 1403913A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- silica
- wafer
- tin oxide
- thick
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 11
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 4
- 229910001887 tin oxide Inorganic materials 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 239000000203 mixture Substances 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- DAMJCWMGELCIMI-UHFFFAOYSA-N benzyl n-(2-oxopyrrolidin-3-yl)carbamate Chemical compound C=1C=CC=CC=1COC(=O)NC1CCNC1=O DAMJCWMGELCIMI-UHFFFAOYSA-N 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- PWEVMPIIOJUPRI-UHFFFAOYSA-N dimethyltin Chemical compound C[Sn]C PWEVMPIIOJUPRI-UHFFFAOYSA-N 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
1403913 Semi-conductor devices OMRON TATEISI ELECTRONICS CO 9 Nov 1972 [10 Nov 1971 10 March 1972] 51836/72 Heading H1K A rectifying interface in a diode is formed between a semi-conductor body and a layer of tin oxide separated from it by a layer of insulation 15-500 Š thick. Suitable materials are silicon, germanium and gallium arsenide for the body and silica, silicon nitride and germanium oxide for the insulation layer. The embodiment is based on a monocrystalline wafer of 1 ohm. cm. N type silicon 200 Á thick. After washing in dilute hydrofluoric acid to remove or render uniform any surface oxide the wafer is heated at 520‹ C. on a quartz substrate in a flowing mixture of water vapour and an oxidizing gas, e.g. air or oxygen, typically for 5 minutes, to form a 20 Š thick silica layer, and then in a mixture of dimethyl tin and inert gas to deposit tin oxide the conductivity of which may be improved by including antimony trichloride in the mixture, to which water vapour may also be added to speed up the deposition. If a P type silicon wafer is used deposition is effected at a higher temperature or the deposit subsequently heat treated. A passivated device is provided by forming the silica in an aperture in a thicker layer on to which the tin oxide extends. Contact electrodes are deposited on the wafer and the tin oxide. The rectifying characteristics are compared with those of devices in which the silica layer is absent or not intentionally formed. The reverse breakdown voltage is higher and shows less variation between devices. In addition the device is photoresponsive and the dependence of this response on the thickness of the silica layer is discussed.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP46090139A JPS5226437B2 (en) | 1971-11-10 | 1971-11-10 | |
| JP47025021A JPS5113631B2 (en) | 1972-03-10 | 1972-03-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1403913A true GB1403913A (en) | 1975-08-28 |
Family
ID=26362623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5183672A Expired GB1403913A (en) | 1971-11-10 | 1972-11-09 | Semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| CA (1) | CA992187A (en) |
| DE (1) | DE2255025C3 (en) |
| FR (1) | FR2159442B1 (en) |
| GB (1) | GB1403913A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3528108A1 (en) * | 1985-08-06 | 1987-02-19 | Sengewald Karl H | Packaging, in particular vacuum-tight packaging for easily spoiled food |
| US5288338A (en) * | 1990-05-23 | 1994-02-22 | Mitsubishi Denki Kabushiki Kaisha | Solar cell and method of producing the solar cell |
| DE4116695C2 (en) * | 1990-05-23 | 1994-11-24 | Mitsubishi Electric Corp | Tandem solar cell and manufacturing process for the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1452611A (en) * | 1963-10-30 | 1966-04-15 | Olivetti & Co Spa | Solid state electronic device |
| US3546540A (en) * | 1969-01-27 | 1970-12-08 | Conductron Corp | Control system |
-
1972
- 1972-11-09 CA CA156,066A patent/CA992187A/en not_active Expired
- 1972-11-09 GB GB5183672A patent/GB1403913A/en not_active Expired
- 1972-11-10 DE DE19722255025 patent/DE2255025C3/en not_active Expired
- 1972-11-10 FR FR7239847A patent/FR2159442B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2255025A1 (en) | 1973-05-17 |
| FR2159442A1 (en) | 1973-06-22 |
| FR2159442B1 (en) | 1977-09-02 |
| DE2255025C3 (en) | 1980-09-25 |
| DE2255025B2 (en) | 1976-07-08 |
| CA992187A (en) | 1976-06-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |