GB1403913A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB1403913A GB1403913A GB5183672A GB5183672A GB1403913A GB 1403913 A GB1403913 A GB 1403913A GB 5183672 A GB5183672 A GB 5183672A GB 5183672 A GB5183672 A GB 5183672A GB 1403913 A GB1403913 A GB 1403913A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- silica
- wafer
- tin oxide
- thick
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/18—Photovoltaic cells having only Schottky potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Light Receiving Elements (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP46090139A JPS5226437B2 (cg-RX-API-DMAC10.html) | 1971-11-10 | 1971-11-10 | |
| JP47025021A JPS5113631B2 (cg-RX-API-DMAC10.html) | 1972-03-10 | 1972-03-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1403913A true GB1403913A (en) | 1975-08-28 |
Family
ID=26362623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5183672A Expired GB1403913A (en) | 1971-11-10 | 1972-11-09 | Semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| CA (1) | CA992187A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2255025C3 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2159442B1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1403913A (cg-RX-API-DMAC10.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3528108A1 (de) * | 1985-08-06 | 1987-02-19 | Sengewald Karl H | Verpackung, insbesondere vakuumdichte verpackung fuer leicht verderbliche lebensmittel |
| US5288338A (en) * | 1990-05-23 | 1994-02-22 | Mitsubishi Denki Kabushiki Kaisha | Solar cell and method of producing the solar cell |
| DE4116695C2 (de) * | 1990-05-23 | 1994-11-24 | Mitsubishi Electric Corp | Tandem-Solarzelle und Herstellungsverfahren für dieselbe |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1452611A (fr) * | 1963-10-30 | 1966-04-15 | Olivetti & Co Spa | Dispositif électronique à l'état solide |
| US3546540A (en) * | 1969-01-27 | 1970-12-08 | Conductron Corp | Control system |
-
1972
- 1972-11-09 CA CA156,066A patent/CA992187A/en not_active Expired
- 1972-11-09 GB GB5183672A patent/GB1403913A/en not_active Expired
- 1972-11-10 DE DE2255025A patent/DE2255025C3/de not_active Expired
- 1972-11-10 FR FR7239847A patent/FR2159442B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2159442B1 (cg-RX-API-DMAC10.html) | 1977-09-02 |
| DE2255025A1 (de) | 1973-05-17 |
| DE2255025B2 (de) | 1976-07-08 |
| FR2159442A1 (cg-RX-API-DMAC10.html) | 1973-06-22 |
| CA992187A (en) | 1976-06-29 |
| DE2255025C3 (de) | 1980-09-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Deal et al. | Characteristics of the surface‐state charge (Qss) of thermally oxidized silicon | |
| Hu | Properties of amorphous silicon nitride films | |
| US3089793A (en) | Semiconductor devices and methods of making them | |
| US4199384A (en) | Method of making a planar semiconductor on insulating substrate device utilizing the deposition of a dual dielectric layer between device islands | |
| US4261095A (en) | Self aligned schottky guard ring | |
| US3386163A (en) | Method for fabricating insulated-gate field effect transistor | |
| US3492174A (en) | Method of making a semiconductor device | |
| US4344985A (en) | Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer | |
| US3745072A (en) | Semiconductor device fabrication | |
| US2974073A (en) | Method of making phosphorus diffused silicon semiconductor devices | |
| GB1422033A (en) | Method of manufacturing a semiconductor device | |
| US3746587A (en) | Method of making semiconductor diodes | |
| US3535600A (en) | Mos varactor diode | |
| GB1400313A (en) | Method of producing semiconductor device | |
| US4001873A (en) | Semiconductor device | |
| US3410736A (en) | Method of forming a glass coating on semiconductors | |
| US3447238A (en) | Method of making a field effect transistor by diffusion,coating with an oxide and placing a metal layer on the oxide | |
| GB1356710A (en) | Semiconductor resistor | |
| US3541676A (en) | Method of forming field-effect transistors utilizing doped insulators as activator source | |
| JPS6459866A (en) | Manufacture of mos transistor | |
| US3471922A (en) | Monolithic integrated circuitry with dielectric isolated functional regions | |
| US3473093A (en) | Semiconductor device having compensated barrier zones between n-p junctions | |
| US4696095A (en) | Process for isolation using self-aligned diffusion process | |
| GB1461943A (en) | Semi-conductor devices | |
| US3303069A (en) | Method of manufacturing semiconductor devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |