GB1380920A - Electric circuits including semiconductor negative resistance diodes - Google Patents

Electric circuits including semiconductor negative resistance diodes

Info

Publication number
GB1380920A
GB1380920A GB6066471A GB6066471A GB1380920A GB 1380920 A GB1380920 A GB 1380920A GB 6066471 A GB6066471 A GB 6066471A GB 6066471 A GB6066471 A GB 6066471A GB 1380920 A GB1380920 A GB 1380920A
Authority
GB
United Kingdom
Prior art keywords
voltage
diode
semi
barrier
transit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6066471A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1380920A publication Critical patent/GB1380920A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
  • Amplifiers (AREA)
GB6066471A 1970-12-31 1971-12-30 Electric circuits including semiconductor negative resistance diodes Expired GB1380920A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10325370A 1970-12-31 1970-12-31

Publications (1)

Publication Number Publication Date
GB1380920A true GB1380920A (en) 1975-01-15

Family

ID=22294198

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6066471A Expired GB1380920A (en) 1970-12-31 1971-12-30 Electric circuits including semiconductor negative resistance diodes

Country Status (15)

Country Link
US (1) US3673514A (enExample)
JP (1) JPS558824B1 (enExample)
AU (1) AU467914B2 (enExample)
BE (1) BE777472A (enExample)
CA (1) CA938352A (enExample)
CH (1) CH538218A (enExample)
DE (1) DE2165417A1 (enExample)
ES (1) ES398775A1 (enExample)
FR (1) FR2120165B1 (enExample)
GB (1) GB1380920A (enExample)
HK (1) HK35376A (enExample)
IE (1) IE35941B1 (enExample)
IT (1) IT945840B (enExample)
NL (1) NL7117973A (enExample)
SE (1) SE366151B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2790304C1 (ru) * 2022-06-07 2023-02-16 Федеральное государственное бюджетное учреждение науки Физико-технологический институт имени К.А. Валиева Российской академии наук Пролетный диод с переменной инжекцией для генерации и детектирования терагерцового излучения

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3755752A (en) * 1971-04-26 1973-08-28 Raytheon Co Back-to-back semiconductor high frequency device
US3784925A (en) * 1971-10-08 1974-01-08 Rca Corp Broadband apparatus using high efficiency avalanche diodes operative in the anomalous mode
US3829880A (en) * 1973-01-05 1974-08-13 Westinghouse Electric Corp Schottky barrier plasma thyristor circuit
US3945028A (en) * 1973-04-26 1976-03-16 Westinghouse Electric Corporation High speed, high power plasma thyristor circuit
SE373245B (enExample) * 1973-05-07 1975-01-27 Stiftelsen Inst Mikrovags
US3824490A (en) * 1973-06-29 1974-07-16 Bell Telephone Labor Inc Negative resistance devices
US3890630A (en) * 1973-10-09 1975-06-17 Rca Corp Impatt diode
US4623849A (en) 1985-04-02 1986-11-18 Cornell Research Foundation, Inc. Broadband high power IMPATT amplifier circuit
US4894832A (en) * 1988-09-15 1990-01-16 North American Philips Corporation Wide band gap semiconductor light emitting devices
US5243199A (en) * 1990-01-19 1993-09-07 Sumitomo Electric Industries, Ltd. High frequency device
JP4637553B2 (ja) * 2004-11-22 2011-02-23 パナソニック株式会社 ショットキーバリアダイオード及びそれを用いた集積回路
WO2012028652A1 (en) * 2010-09-01 2012-03-08 Vibronical Ag Electronic apparatus and electronic circuit comprising such an electronic apparatus
WO2012055630A1 (en) * 2010-10-25 2012-05-03 Vibronical Ag Electronic apparatus and electronic circuit comprising such an electronic apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1516754B1 (de) * 1965-05-27 1972-06-08 Fujitsu Ltd Halbleitervorrichtung
US3393376A (en) * 1966-04-15 1968-07-16 Texas Instruments Inc Punch-through microwave oscillator
US3488527A (en) * 1967-09-05 1970-01-06 Fairchild Camera Instr Co Punch-through,microwave negativeresistance device
US3537021A (en) * 1968-09-09 1970-10-27 Bell Telephone Labor Inc Stable frequency-independent two-valley semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2790304C1 (ru) * 2022-06-07 2023-02-16 Федеральное государственное бюджетное учреждение науки Физико-технологический институт имени К.А. Валиева Российской академии наук Пролетный диод с переменной инжекцией для генерации и детектирования терагерцового излучения

Also Published As

Publication number Publication date
FR2120165A1 (enExample) 1972-08-11
CA938352A (en) 1973-12-11
HK35376A (en) 1976-06-18
US3673514A (en) 1972-06-27
FR2120165B1 (enExample) 1975-04-18
IE35941B1 (en) 1976-07-07
DE2165417A1 (de) 1972-08-03
AU467914B2 (en) 1975-12-18
AU3743671A (en) 1973-07-05
ES398775A1 (es) 1975-06-01
NL7117973A (enExample) 1972-07-04
CH538218A (de) 1973-06-15
JPS558824B1 (enExample) 1980-03-06
IT945840B (it) 1973-05-10
SE366151B (enExample) 1974-04-08
BE777472A (fr) 1972-04-17

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee