FR2120165A1 - - Google Patents

Info

Publication number
FR2120165A1
FR2120165A1 FR7147680A FR7147680A FR2120165A1 FR 2120165 A1 FR2120165 A1 FR 2120165A1 FR 7147680 A FR7147680 A FR 7147680A FR 7147680 A FR7147680 A FR 7147680A FR 2120165 A1 FR2120165 A1 FR 2120165A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7147680A
Other languages
French (fr)
Other versions
FR2120165B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2120165A1 publication Critical patent/FR2120165A1/fr
Application granted granted Critical
Publication of FR2120165B1 publication Critical patent/FR2120165B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
FR7147680A 1970-12-31 1971-12-30 Expired FR2120165B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10325370A 1970-12-31 1970-12-31

Publications (2)

Publication Number Publication Date
FR2120165A1 true FR2120165A1 (enExample) 1972-08-11
FR2120165B1 FR2120165B1 (enExample) 1975-04-18

Family

ID=22294198

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7147680A Expired FR2120165B1 (enExample) 1970-12-31 1971-12-30

Country Status (15)

Country Link
US (1) US3673514A (enExample)
JP (1) JPS558824B1 (enExample)
AU (1) AU467914B2 (enExample)
BE (1) BE777472A (enExample)
CA (1) CA938352A (enExample)
CH (1) CH538218A (enExample)
DE (1) DE2165417A1 (enExample)
ES (1) ES398775A1 (enExample)
FR (1) FR2120165B1 (enExample)
GB (1) GB1380920A (enExample)
HK (1) HK35376A (enExample)
IE (1) IE35941B1 (enExample)
IT (1) IT945840B (enExample)
NL (1) NL7117973A (enExample)
SE (1) SE366151B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3755752A (en) * 1971-04-26 1973-08-28 Raytheon Co Back-to-back semiconductor high frequency device
US3784925A (en) * 1971-10-08 1974-01-08 Rca Corp Broadband apparatus using high efficiency avalanche diodes operative in the anomalous mode
US3829880A (en) * 1973-01-05 1974-08-13 Westinghouse Electric Corp Schottky barrier plasma thyristor circuit
US3945028A (en) * 1973-04-26 1976-03-16 Westinghouse Electric Corporation High speed, high power plasma thyristor circuit
SE373245B (enExample) * 1973-05-07 1975-01-27 Stiftelsen Inst Mikrovags
US3824490A (en) * 1973-06-29 1974-07-16 Bell Telephone Labor Inc Negative resistance devices
US3890630A (en) * 1973-10-09 1975-06-17 Rca Corp Impatt diode
US4623849A (en) 1985-04-02 1986-11-18 Cornell Research Foundation, Inc. Broadband high power IMPATT amplifier circuit
US4894832A (en) * 1988-09-15 1990-01-16 North American Philips Corporation Wide band gap semiconductor light emitting devices
US5243199A (en) * 1990-01-19 1993-09-07 Sumitomo Electric Industries, Ltd. High frequency device
JP4637553B2 (ja) * 2004-11-22 2011-02-23 パナソニック株式会社 ショットキーバリアダイオード及びそれを用いた集積回路
WO2012028652A1 (en) * 2010-09-01 2012-03-08 Vibronical Ag Electronic apparatus and electronic circuit comprising such an electronic apparatus
WO2012055630A1 (en) * 2010-10-25 2012-05-03 Vibronical Ag Electronic apparatus and electronic circuit comprising such an electronic apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3393376A (en) * 1966-04-15 1968-07-16 Texas Instruments Inc Punch-through microwave oscillator
US3439290A (en) * 1965-05-27 1969-04-15 Fujitsu Ltd Gunn-effect oscillator

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3488527A (en) * 1967-09-05 1970-01-06 Fairchild Camera Instr Co Punch-through,microwave negativeresistance device
US3537021A (en) * 1968-09-09 1970-10-27 Bell Telephone Labor Inc Stable frequency-independent two-valley semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3439290A (en) * 1965-05-27 1969-04-15 Fujitsu Ltd Gunn-effect oscillator
US3393376A (en) * 1966-04-15 1968-07-16 Texas Instruments Inc Punch-through microwave oscillator

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
(REVUE AMERICAINE"R.C.A.REVIEW"VOL 30,NO2,JUIN 1969"THE EFFECT OF BARRIER RECOMBINATION ON PRODUCTION OF HOT LECTRONS IN A METAL BY FORWARD BIAS INJECTION IN A SCHOTTKY DIODE". R.WILLIAMS,PAGES 306-313.) *
PRODUCTION OF HOT LECTRONS IN A METAL BY FORWARD BIAS INJECTION IN A SCHOTTKY DIODE". *
R.WILLIAMS,PAGES 306-313.) *
REVUE AMERICAINE"R.C.A.REVIEW"VOL 30,NO2,JUIN 1969"THE EFFECT OF BARRIER RECOMBINATION ON *

Also Published As

Publication number Publication date
CA938352A (en) 1973-12-11
HK35376A (en) 1976-06-18
US3673514A (en) 1972-06-27
FR2120165B1 (enExample) 1975-04-18
IE35941B1 (en) 1976-07-07
GB1380920A (en) 1975-01-15
DE2165417A1 (de) 1972-08-03
AU467914B2 (en) 1975-12-18
AU3743671A (en) 1973-07-05
ES398775A1 (es) 1975-06-01
NL7117973A (enExample) 1972-07-04
CH538218A (de) 1973-06-15
JPS558824B1 (enExample) 1980-03-06
IT945840B (it) 1973-05-10
SE366151B (enExample) 1974-04-08
BE777472A (fr) 1972-04-17

Similar Documents

Publication Publication Date Title
AR204384A1 (enExample)
ATA96471A (enExample)
AU2044470A (enExample)
AU1146470A (enExample)
AU1473870A (enExample)
AU2085370A (enExample)
AU2130570A (enExample)
AU1336970A (enExample)
AU2017870A (enExample)
AU1833270A (enExample)
AU1716970A (enExample)
AU1326870A (enExample)
AU1517670A (enExample)
AU1591370A (enExample)
AU1872870A (enExample)
AU2144270A (enExample)
AU2131570A (enExample)
AU2130770A (enExample)
ATA672271A (enExample)
AU1343870A (enExample)
AU1277070A (enExample)
AU2119370A (enExample)
AU1247570A (enExample)
AU1581370A (enExample)
AU1235770A (enExample)

Legal Events

Date Code Title Description
ST Notification of lapse