GB1376336A - Transistors - Google Patents

Transistors

Info

Publication number
GB1376336A
GB1376336A GB5425571A GB5425571A GB1376336A GB 1376336 A GB1376336 A GB 1376336A GB 5425571 A GB5425571 A GB 5425571A GB 5425571 A GB5425571 A GB 5425571A GB 1376336 A GB1376336 A GB 1376336A
Authority
GB
United Kingdom
Prior art keywords
collector
base
collector region
region
auxiliary emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5425571A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1376336A publication Critical patent/GB1376336A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10P95/00

Landscapes

  • Bipolar Transistors (AREA)
GB5425571A 1970-11-25 1971-11-23 Transistors Expired GB1376336A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702058070 DE2058070A1 (de) 1970-11-25 1970-11-25 Transistor mit grosser Stromdichte

Publications (1)

Publication Number Publication Date
GB1376336A true GB1376336A (en) 1974-12-04

Family

ID=5789116

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5425571A Expired GB1376336A (en) 1970-11-25 1971-11-23 Transistors

Country Status (5)

Country Link
DE (1) DE2058070A1 (enExample)
FR (1) FR2115260A1 (enExample)
GB (1) GB1376336A (enExample)
IT (1) IT941773B (enExample)
NL (1) NL7116158A (enExample)

Also Published As

Publication number Publication date
DE2058070A1 (de) 1972-06-15
IT941773B (it) 1973-03-10
NL7116158A (enExample) 1972-05-29
FR2115260A1 (enExample) 1972-07-07

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees