GB1374721A - Information storage - Google Patents

Information storage

Info

Publication number
GB1374721A
GB1374721A GB3101172A GB3101172A GB1374721A GB 1374721 A GB1374721 A GB 1374721A GB 3101172 A GB3101172 A GB 3101172A GB 3101172 A GB3101172 A GB 3101172A GB 1374721 A GB1374721 A GB 1374721A
Authority
GB
United Kingdom
Prior art keywords
region
iii
electrode
diffused
storage region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3101172A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1374721A publication Critical patent/GB1374721A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/22—Subject matter not provided for in other groups of this subclass including field-effect components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)

Abstract

1374721 Semi-conductor memory elements INTERNATIONAL BUSINESS MACHINES CORP 3 July 1972 [6 July 1971 (2)] 31011/72 Addition to 1374009 Heading H1K In a memory element in which binary information is represented by the flow of charge between a storage region III of a semi-conductor body 1 and a diffused region 3 making a PN junction with the body 1, a single electrode 32 is capacitively coupled both to the storage region III and to a gate region II between the regions 3 and III. The threshold voltage required on the electrode 32 to induce an inversion layer in the underlying semi-conductor material is lower for the storage region III than for the gate region II, with the result that the inversion layer in the region III may be selectively connected to or isolated from the diffused region 3 by an inversion channel in the region II. Two alternative modes of operation employing this facility and termed respectively "reach-through" and "clear" modes are described. The difference in inversion threshold between the regions is achieved in the illustrated embodiment by the provision at region II of a diffused or ion implanted zone 25 of the same conductivity type as but higher conductivity than the body 1. In a modification of this embodiment the higher conductivity zone defining the region II completely surrounds the diffused region 3. Other methods of achieving the required threshold difference are by providing a thicker oxide insulation 30 between the electrode 32 and the gate region II than between the electrode 32 and the storage region III, by providing a nitrideon-oxide insulation above the storage region III and oxide alone above the gate region II, or by providing an Al electrode above the gate region II and an Al-on-doped polycrystalline Si above the storage region III.
GB3101172A 1971-07-06 1972-07-03 Information storage Expired GB1374721A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15986071A 1971-07-06 1971-07-06
US15990771A 1971-07-06 1971-07-06

Publications (1)

Publication Number Publication Date
GB1374721A true GB1374721A (en) 1974-11-20

Family

ID=26856384

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3101172A Expired GB1374721A (en) 1971-07-06 1972-07-03 Information storage

Country Status (3)

Country Link
GB (1) GB1374721A (en)
NL (1) NL7209362A (en)
SE (1) SE384944B (en)

Also Published As

Publication number Publication date
SE384944B (en) 1976-05-24
NL7209362A (en) 1973-01-09

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee