GB1371188A - Gas wafer treatments - Google Patents

Gas wafer treatments

Info

Publication number
GB1371188A
GB1371188A GB1859073A GB1859073A GB1371188A GB 1371188 A GB1371188 A GB 1371188A GB 1859073 A GB1859073 A GB 1859073A GB 1859073 A GB1859073 A GB 1859073A GB 1371188 A GB1371188 A GB 1371188A
Authority
GB
United Kingdom
Prior art keywords
reacting
aqueous solution
gallium
concentration
sodium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1859073A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1371188A publication Critical patent/GB1371188A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302Non-deposition formation processes
    • H10P14/6304Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6312Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group III-V semiconductors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302Non-deposition formation processes
    • H10P14/6322Formation by thermal treatments
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
GB1859073A 1972-05-01 1973-04-18 Gas wafer treatments Expired GB1371188A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24887472A 1972-05-01 1972-05-01

Publications (1)

Publication Number Publication Date
GB1371188A true GB1371188A (en) 1974-10-23

Family

ID=22941055

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1859073A Expired GB1371188A (en) 1972-05-01 1973-04-18 Gas wafer treatments

Country Status (7)

Country Link
US (1) US3776789A (https=)
JP (1) JPS5212057B2 (https=)
CA (1) CA980919A (https=)
DE (1) DE2319286C3 (https=)
FR (1) FR2182969B1 (https=)
GB (1) GB1371188A (https=)
IT (1) IT981200B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2413608C2 (de) * 1974-03-21 1982-09-02 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines Halbleiterbauelements
FR2454183A1 (fr) * 1979-04-10 1980-11-07 Jerphagnon Jean Structure de type oxyde-semi-conducteur dans laquelle le semi-conducteur est un compose iii-v et procede de fabrication de cette structure
US7001827B2 (en) * 2003-04-15 2006-02-21 International Business Machines Corporation Semiconductor wafer front side protection
JP2006059535A (ja) * 2004-08-17 2006-03-02 Seiko Instruments Inc 有機電子デバイスの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3342652A (en) * 1964-04-02 1967-09-19 Ibm Chemical polishing of a semi-conductor substrate
CA920285A (en) * 1970-11-30 1973-01-30 L. Hartman Robert Extending the operating life of light emitting p-n junction devices

Also Published As

Publication number Publication date
FR2182969A1 (https=) 1973-12-14
US3776789A (en) 1973-12-04
JPS5212057B2 (https=) 1977-04-04
IT981200B (it) 1974-10-10
CA980919A (en) 1975-12-30
DE2319286A1 (de) 1973-11-22
DE2319286C3 (de) 1981-12-24
DE2319286B2 (de) 1981-02-05
FR2182969B1 (https=) 1977-04-29
JPS4927167A (https=) 1974-03-11

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee