GB1362692A - Device for storing and transferring information - Google Patents
Device for storing and transferring informationInfo
- Publication number
- GB1362692A GB1362692A GB1113971*[A GB1113971A GB1362692A GB 1362692 A GB1362692 A GB 1362692A GB 1113971 A GB1113971 A GB 1113971A GB 1362692 A GB1362692 A GB 1362692A
- Authority
- GB
- United Kingdom
- Prior art keywords
- conductors
- adjacent
- channels
- information
- straight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 abstract 13
- 239000004065 semiconductor Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 230000004048 modification Effects 0.000 abstract 2
- 238000012986 modification Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000005670 electromagnetic radiation Effects 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
- G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/472—Surface-channel CCD
- H10D44/476—Three-phase CCD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US5635370A | 1970-07-20 | 1970-07-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1362692A true GB1362692A (en) | 1974-08-07 |
Family
ID=22003846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1113971*[A Expired GB1362692A (en) | 1970-07-20 | 1971-07-20 | Device for storing and transferring information |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS55912B1 (enrdf_load_stackoverflow) |
| DE (1) | DE2135748A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2099474B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1362692A (enrdf_load_stackoverflow) |
| NL (1) | NL7106968A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1044825B (it) * | 1971-03-29 | 1980-04-21 | Ibm | Dispositivo semiconduttore a cariche accoppiate caratterizzato da una elevata velocita e da un elevato rendimento di trasferimento |
| GB2022920B (en) * | 1978-06-02 | 1983-02-23 | Sony Corp | Electric charge transfer devices |
| FR2647963B1 (fr) * | 1989-05-30 | 1991-08-16 | Thomson Composants Militaires | Dispositif a transfert de charge a polarisation de substrat par contact redresseur |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3651349A (en) * | 1970-02-16 | 1972-03-21 | Bell Telephone Labor Inc | Monolithic semiconductor apparatus adapted for sequential charge transfer |
-
1971
- 1971-05-21 NL NL7106968A patent/NL7106968A/xx not_active Application Discontinuation
- 1971-07-16 DE DE19712135748 patent/DE2135748A1/de not_active Withdrawn
- 1971-07-20 FR FR7126438A patent/FR2099474B1/fr not_active Expired
- 1971-07-20 JP JP5367071A patent/JPS55912B1/ja active Pending
- 1971-07-20 GB GB1113971*[A patent/GB1362692A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2135748A1 (de) | 1972-01-27 |
| FR2099474B1 (enrdf_load_stackoverflow) | 1976-03-19 |
| JPS55912B1 (enrdf_load_stackoverflow) | 1980-01-10 |
| NL7106968A (enrdf_load_stackoverflow) | 1972-01-24 |
| FR2099474A1 (enrdf_load_stackoverflow) | 1972-03-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |