Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D44/00—Charge transfer devices
  • H10D44/40—Charge-coupled devices [CCD]
  • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
  • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
  • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
  • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
  • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D44/00—Charge transfer devices
  • H10D44/40—Charge-coupled devices [CCD]
  • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
  • H10D44/472—Surface-channel CCD
  • H10D44/476—Three-phase CCD
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID

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• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Solid State Image Pick-Up Elements (AREA)
• Semiconductor Memories (AREA)

Applications Claiming Priority (1)

Publications (2)

Family

ID=22003846

Family Applications (1)

Country Status (5)

Cited By (2)

Families Citing this family (1)

Citations (1)

• 1971
  • 1971-05-21 NL NL7106968A patent/NL7106968A/xx not_active Application Discontinuation
  • 1971-07-16 DE DE19712135748 patent/DE2135748A1/de not_active Withdrawn
  • 1971-07-20 JP JP5367071A patent/JPS55912B1/ja active Pending
  • 1971-07-20 GB GB1113971*[A patent/GB1362692A/en not_active Expired
  • 1971-07-20 FR FR7126438A patent/FR2099474B1/fr not_active Expired

Patent Citations (1)

Non-Patent Citations (3)

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