GB1362305A - Diode array target for a camera tube - Google Patents
Diode array target for a camera tubeInfo
- Publication number
- GB1362305A GB1362305A GB1026772A GB1026772A GB1362305A GB 1362305 A GB1362305 A GB 1362305A GB 1026772 A GB1026772 A GB 1026772A GB 1026772 A GB1026772 A GB 1026772A GB 1362305 A GB1362305 A GB 1362305A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- silicon
- insulation
- layer
- microns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 abstract 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 abstract 1
- UKUVVAMSXXBMRX-UHFFFAOYSA-N 2,4,5-trithia-1,3-diarsabicyclo[1.1.1]pentane Chemical compound S1[As]2S[As]1S2 UKUVVAMSXXBMRX-UHFFFAOYSA-N 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910005540 GaP Inorganic materials 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Light Receiving Elements (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP46011971A JPS5025311B1 (enrdf_load_stackoverflow) | 1971-03-08 | 1971-03-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1362305A true GB1362305A (en) | 1974-08-07 |
Family
ID=11792486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1026772A Expired GB1362305A (en) | 1971-03-08 | 1972-03-06 | Diode array target for a camera tube |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS5025311B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1362305A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2354631A1 (fr) * | 1976-02-27 | 1978-01-06 | Philips Nv | Tube de prise de vues |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53107580U (enrdf_load_stackoverflow) * | 1977-02-03 | 1978-08-29 | ||
| JPS5492630U (enrdf_load_stackoverflow) * | 1977-12-14 | 1979-06-30 |
-
1971
- 1971-03-08 JP JP46011971A patent/JPS5025311B1/ja active Pending
-
1972
- 1972-03-06 GB GB1026772A patent/GB1362305A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2354631A1 (fr) * | 1976-02-27 | 1978-01-06 | Philips Nv | Tube de prise de vues |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5025311B1 (enrdf_load_stackoverflow) | 1975-08-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3617753A (en) | Semiconductor photoelectric converting device | |
| US4095011A (en) | Electroluminescent semiconductor device with passivation layer | |
| GB1222445A (en) | Improvements in or relating to electron beam light-electric translating arrangements | |
| GB1448285A (en) | Electroluminescent semiconductor device | |
| US3800194A (en) | Photoconductive target of an image tube | |
| US3770988A (en) | Self-registered surface charge launch-receive device and method for making | |
| US3890525A (en) | Photoconductive target of an image pickup tube comprising graded selenium-tellurium layer | |
| GB1362305A (en) | Diode array target for a camera tube | |
| GB1179985A (en) | Method of Preparing Photoconductive Layers of Substrates. | |
| GB1426760A (en) | Electroluminescent semiconductor device | |
| US3755002A (en) | Method of making photoconductive film | |
| DE2036932A1 (de) | Verfahren zur Herstellung Licht emittierender, monolithischer Halbleiterdioden und Anordnungen von ihnen | |
| GB1137803A (en) | Photoconductive devices and the method for manufacturing the same | |
| US3622712A (en) | Device employing selenium-semiconductor heterojunction | |
| US3990095A (en) | Selenium rectifier having hexagonal polycrystalline selenium layer | |
| US3668473A (en) | Photosensitive semi-conductor device | |
| GB1225854A (enrdf_load_stackoverflow) | ||
| GB1198570A (en) | A Photoconductive Target. | |
| US4939561A (en) | Infrared sensor | |
| GB1302206A (enrdf_load_stackoverflow) | ||
| GB1519669A (en) | Photoelectric devise | |
| GB1286231A (en) | An electron multiplication target and an image pickup tube using the same | |
| US4086512A (en) | Camera tube employing silicon-chalcogenide target with heterojunction | |
| GB1289651A (enrdf_load_stackoverflow) | ||
| US3585430A (en) | Gallium arsenide phosphide camera tube target having a semi-insulating layer on the scanned surface |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 435 | Patent endorsed 'licences of right' on the date specified (sect. 35/1949) | ||
| PE20 | Patent expired after termination of 20 years |