GB1289651A - - Google Patents

Info

Publication number
GB1289651A
GB1289651A GB272170A GB1289651DA GB1289651A GB 1289651 A GB1289651 A GB 1289651A GB 272170 A GB272170 A GB 272170A GB 1289651D A GB1289651D A GB 1289651DA GB 1289651 A GB1289651 A GB 1289651A
Authority
GB
United Kingdom
Prior art keywords
substrate
regions
silicon
apertures
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB272170A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1289651A publication Critical patent/GB1289651A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
GB272170A 1970-01-20 1970-01-20 Expired GB1289651A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB272170 1970-01-20

Publications (1)

Publication Number Publication Date
GB1289651A true GB1289651A (enrdf_load_stackoverflow) 1972-09-20

Family

ID=9744634

Family Applications (1)

Application Number Title Priority Date Filing Date
GB272170A Expired GB1289651A (enrdf_load_stackoverflow) 1970-01-20 1970-01-20

Country Status (1)

Country Link
GB (1) GB1289651A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0005543A1 (en) * 1978-05-19 1979-11-28 Hitachi, Ltd. Photosensor
GB2132017A (en) * 1982-12-16 1984-06-27 Secr Defence Semiconductor device array
GB2450037A (en) * 2004-03-30 2008-12-10 Texas Instruments Inc Dual Metal Schottky Diode
US7902055B2 (en) 2004-03-30 2011-03-08 Texas Instruments Incoprorated Method of manufacturing a dual metal Schottky diode
US20140044925A1 (en) * 2012-08-09 2014-02-13 Hon Hai Precision Industry Co., Ltd. Protective cover made with sapphire and method of manufacturing same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0005543A1 (en) * 1978-05-19 1979-11-28 Hitachi, Ltd. Photosensor
US4255686A (en) 1978-05-19 1981-03-10 Hitachi, Ltd. Storage type photosensor containing silicon and hydrogen
GB2132017A (en) * 1982-12-16 1984-06-27 Secr Defence Semiconductor device array
GB2450037A (en) * 2004-03-30 2008-12-10 Texas Instruments Inc Dual Metal Schottky Diode
GB2450037B (en) * 2004-03-30 2009-05-27 Texas Instruments Inc Schottky diode
US7902055B2 (en) 2004-03-30 2011-03-08 Texas Instruments Incoprorated Method of manufacturing a dual metal Schottky diode
US20140044925A1 (en) * 2012-08-09 2014-02-13 Hon Hai Precision Industry Co., Ltd. Protective cover made with sapphire and method of manufacturing same

Similar Documents

Publication Publication Date Title
GB1070278A (en) Method of producing a semiconductor integrated circuit element
US3722079A (en) Process for forming buried layers to reduce collector resistance in top contact transistors
US3492174A (en) Method of making a semiconductor device
US3775196A (en) Method of selectively diffusing carrier killers into integrated circuits utilizing polycrystalline regions
US3791024A (en) Fabrication of monolithic integrated circuits
US3746587A (en) Method of making semiconductor diodes
US3546542A (en) Integrated high voltage solar cell panel
GB1400313A (en) Method of producing semiconductor device
US3636617A (en) Method for fabricating monolithic light-emitting semiconductor diodes and arrays thereof
JPS5669844A (en) Manufacture of semiconductor device
GB1260434A (en) Monolithic integrated circuit structure and method of fabrication
US2975080A (en) Production of controlled p-n junctions
GB1289651A (enrdf_load_stackoverflow)
US3846198A (en) Method of making semiconductor devices having thin active regions of the semiconductor material
US3636618A (en) Ohmic contact for semiconductor devices
GB1356710A (en) Semiconductor resistor
GB1277973A (en) Semiconductor device
GB1315316A (en) Semiconductor heterojunction device
US3846193A (en) Minimizing cross-talk in l.e.d.arrays
US3471922A (en) Monolithic integrated circuitry with dielectric isolated functional regions
US3821616A (en) Monolithic semiconductor display devices
US3636418A (en) Epitaxial semiconductor device having adherent bonding pads
US3694719A (en) Schottky barrier diode
US3787720A (en) Semiconductor vidicon and process for fabricating same
US3530014A (en) Method of producing gallium arsenide devices

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PE20 Patent expired after termination of 20 years