GB1289651A - - Google Patents

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Publication number
GB1289651A
GB1289651A GB1289651DA GB1289651A GB 1289651 A GB1289651 A GB 1289651A GB 1289651D A GB1289651D A GB 1289651DA GB 1289651 A GB1289651 A GB 1289651A
Authority
GB
United Kingdom
Prior art keywords
substrate
regions
silicon
apertures
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1289651A publication Critical patent/GB1289651A/en
Expired legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233Manufacture of photoelectric screens or charge-storage screens
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36Photoelectric screens; Charge-storage screens
    • H01J29/39Charge-storage screens
    • H01J29/45Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Led Devices (AREA)

Abstract

1289651 Image pick-up tubes; semi-conductor arrays TOKYO SHIBAURA ELECTRIC CO Ltd 20 Jan 1970 2721/70 Headings H1D and H1K The target of an image pick-up tube comprises an array of junctions on a semi-conductor layer supported by a monocrystalline insulating transparent substrate. In Fig. 3 a mono crystalline layer 11 of N-type silicon 20 microns thick is formed on a sapphire substrate 10 and covered with an insulating layer 12 of silicon dioxide formed with an array of apertures through which P-type material is diffused to form regions 13 in which N-type regions 16 are formed. A gold coating 15 is deposited round the periphery to form an electrode. In a modification, Fig. 1 (not shown), the regions 16 are omitted and in a modification of this diode arrangement (Fig. 2, not shown) the regions 13 extend right through to the substrate. The N-P-N arrangement shown in Fig. 3 may also be modified by extending the regions 13 and 16 right through to the substrate (Fig. 4, not shown). In another arrangement, Fig. 5F, the sapphire substrate has its upper and lower surfaces selected to be the (0001) faces and a nickel layer 21 of 0.5 micron thickness is formed on the substrate and etched to provide a pattern of apertures 10 microns diameter at a pitch of 15 microns. N-type monocrystalline silicon 3 microns thick is deposited at 22a over the substrate whilst the deposits at 22b over the nickel are polycrystalline. An apertured silicon oxide layer 23 covers the surface and boron is diffused through the apertures to form P-type regions 26 to a depth of 0.5 micron. The layer 21 may be of silicon oxide or chromium oxide or may be omitted. In a modification, Fig. 6 (not shown), islands of silicon are formed on the substrate and surrounded by metal or semiconductor, after which the apertured insulating layer is formed and P-type material diffused through the apertures. In a further arrangement, Fig. 7, metal islands 33 are deposited in the apertures in the insulating layer 32 to form Schottky junctions and are coated with a second metal at 35; the first metal may be gold, platinum, tungsten, nickel, molybdenum, titanium or aluminium and the second metal gold, titanium or tungsten. The substrate may be of spinel, quartz, magnesia or calcium fluoride instead of sapphire and may include an impurity to give selective transmission of light; cobalt improves violet transmission, chromium green, and copper infra-red. The semi-conductor material may be gallium arsenide or phosphide instead of silicon.
GB1289651D 1970-01-20 1970-01-20 Expired GB1289651A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB272170 1970-01-20

Publications (1)

Publication Number Publication Date
GB1289651A true GB1289651A (en) 1972-09-20

Family

ID=9744634

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1289651D Expired GB1289651A (en) 1970-01-20 1970-01-20

Country Status (1)

Country Link
GB (1) GB1289651A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0005543A1 (en) * 1978-05-19 1979-11-28 Hitachi, Ltd. Photosensor
GB2132017A (en) * 1982-12-16 1984-06-27 Secr Defence Semiconductor device array
GB2450037A (en) * 2004-03-30 2008-12-10 Texas Instruments Inc Dual Metal Schottky Diode
US7902055B2 (en) 2004-03-30 2011-03-08 Texas Instruments Incoprorated Method of manufacturing a dual metal Schottky diode
US20140044925A1 (en) * 2012-08-09 2014-02-13 Hon Hai Precision Industry Co., Ltd. Protective cover made with sapphire and method of manufacturing same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0005543A1 (en) * 1978-05-19 1979-11-28 Hitachi, Ltd. Photosensor
GB2132017A (en) * 1982-12-16 1984-06-27 Secr Defence Semiconductor device array
GB2450037A (en) * 2004-03-30 2008-12-10 Texas Instruments Inc Dual Metal Schottky Diode
GB2450037B (en) * 2004-03-30 2009-05-27 Texas Instruments Inc Schottky diode
US7902055B2 (en) 2004-03-30 2011-03-08 Texas Instruments Incoprorated Method of manufacturing a dual metal Schottky diode
US20140044925A1 (en) * 2012-08-09 2014-02-13 Hon Hai Precision Industry Co., Ltd. Protective cover made with sapphire and method of manufacturing same

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Legal Events

Date Code Title Description
PS Patent sealed
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PE20 Patent expired after termination of 20 years