GB1359707A - Transistor for operation at very high frequencies and a method for the manufacture thereof - Google Patents
Transistor for operation at very high frequencies and a method for the manufacture thereofInfo
- Publication number
- GB1359707A GB1359707A GB3200071A GB3200071A GB1359707A GB 1359707 A GB1359707 A GB 1359707A GB 3200071 A GB3200071 A GB 3200071A GB 3200071 A GB3200071 A GB 3200071A GB 1359707 A GB1359707 A GB 1359707A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- transistor
- ion
- wafer
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR707025558A FR2096876B1 (enExample) | 1970-07-09 | 1970-07-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1359707A true GB1359707A (en) | 1974-07-10 |
Family
ID=9058531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3200071A Expired GB1359707A (en) | 1970-07-09 | 1971-07-07 | Transistor for operation at very high frequencies and a method for the manufacture thereof |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR2096876B1 (enExample) |
| GB (1) | GB1359707A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0012838A1 (de) * | 1978-12-22 | 1980-07-09 | International Business Machines Corporation | Ionenquelle, insbesondere für Ionenimplantationsanlagen |
| EP0021140A1 (de) * | 1979-06-29 | 1981-01-07 | International Business Machines Corporation | Ionenquelle in einer Vakuumkammer und Verfahren zum Betrieb derselben |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2027986B (en) * | 1978-07-31 | 1983-01-19 | Philips Electronic Associated | Infra-red detectors |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1228754A (enExample) * | 1967-05-26 | 1971-04-21 |
-
1970
- 1970-07-09 FR FR707025558A patent/FR2096876B1/fr not_active Expired
-
1971
- 1971-07-07 GB GB3200071A patent/GB1359707A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0012838A1 (de) * | 1978-12-22 | 1980-07-09 | International Business Machines Corporation | Ionenquelle, insbesondere für Ionenimplantationsanlagen |
| EP0021140A1 (de) * | 1979-06-29 | 1981-01-07 | International Business Machines Corporation | Ionenquelle in einer Vakuumkammer und Verfahren zum Betrieb derselben |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2096876A1 (enExample) | 1972-03-03 |
| FR2096876B1 (enExample) | 1973-08-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |