GB1356515A - Non-crucible zone melting of semiconductor rods - Google Patents
Non-crucible zone melting of semiconductor rodsInfo
- Publication number
- GB1356515A GB1356515A GB3676072A GB3676072A GB1356515A GB 1356515 A GB1356515 A GB 1356515A GB 3676072 A GB3676072 A GB 3676072A GB 3676072 A GB3676072 A GB 3676072A GB 1356515 A GB1356515 A GB 1356515A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rod
- tube
- liquid
- zone melting
- seal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004857 zone melting Methods 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000007788 liquid Substances 0.000 abstract 5
- 239000004411 aluminium Substances 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 230000008878 coupling Effects 0.000 abstract 2
- 238000010168 coupling process Methods 0.000 abstract 2
- 238000005859 coupling reaction Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001128 Sn alloy Inorganic materials 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000003822 epoxy resin Substances 0.000 abstract 1
- 230000005284 excitation Effects 0.000 abstract 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910001092 metal group alloy Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920000647 polyepoxide Polymers 0.000 abstract 1
- -1 polytetrafluoroethylene Polymers 0.000 abstract 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 abstract 1
- 239000004810 polytetrafluoroethylene Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229920002545 silicone oil Polymers 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/26—Stirring of the molten zone
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2143112A DE2143112A1 (de) | 1971-08-27 | 1971-08-27 | Verfahren zur erzielung eines gleichmaessigen radialen widerstandsverlaufs beim herstellen eines halbleiter-einkristallstabes durch tiegelfreies zonenschmelzen |
| DE19712159916 DE2159916A1 (de) | 1971-12-02 | 1971-12-02 | Verfahren zur erzielung eines gleichmaessigen radialen widerstandsverlaufs beim herstellen eines halbleitereinkristallstabes durch tiegelfreies zonenschmelzen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1356515A true GB1356515A (en) | 1974-06-12 |
Family
ID=25761662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3676072A Expired GB1356515A (en) | 1971-08-27 | 1972-08-07 | Non-crucible zone melting of semiconductor rods |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS4832467A (https=) |
| BE (1) | BE788027A (https=) |
| FR (1) | FR2150860B1 (https=) |
| GB (1) | GB1356515A (https=) |
| IT (1) | IT968208B (https=) |
| NL (1) | NL7209160A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2257428C2 (ru) * | 2003-10-27 | 2005-07-27 | Читинский государственный технический университет (Чит ГТУ) | Способ получения однородных монокристаллов |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51145268A (en) * | 1975-06-10 | 1976-12-14 | Nec Home Electronics Ltd | Epitaxial semiconductor device |
-
1972
- 1972-06-30 NL NL7209160A patent/NL7209160A/xx unknown
- 1972-08-07 GB GB3676072A patent/GB1356515A/en not_active Expired
- 1972-08-25 FR FR7230311A patent/FR2150860B1/fr not_active Expired
- 1972-08-25 IT IT2850272A patent/IT968208B/it active
- 1972-08-25 BE BE788027A patent/BE788027A/xx unknown
- 1972-08-28 JP JP8608372A patent/JPS4832467A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2257428C2 (ru) * | 2003-10-27 | 2005-07-27 | Читинский государственный технический университет (Чит ГТУ) | Способ получения однородных монокристаллов |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2150860A1 (https=) | 1973-04-13 |
| NL7209160A (https=) | 1973-03-01 |
| FR2150860B1 (https=) | 1974-08-19 |
| IT968208B (it) | 1974-03-20 |
| JPS4832467A (https=) | 1973-04-28 |
| BE788027A (fr) | 1972-12-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |