GB1354849A - Monolithic memories - Google Patents
Monolithic memoriesInfo
- Publication number
- GB1354849A GB1354849A GB1556072A GB1556072A GB1354849A GB 1354849 A GB1354849 A GB 1354849A GB 1556072 A GB1556072 A GB 1556072A GB 1556072 A GB1556072 A GB 1556072A GB 1354849 A GB1354849 A GB 1354849A
- Authority
- GB
- United Kingdom
- Prior art keywords
- card
- chip
- sector
- bit
- bits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1012—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using codes or arrangements adapted for a specific type of error
- G06F11/1024—Identification of the type of error
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Hardware Redundancy (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15663771A | 1971-06-25 | 1971-06-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1354849A true GB1354849A (en) | 1974-06-05 |
Family
ID=22560395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1556072A Expired GB1354849A (en) | 1971-06-25 | 1972-04-05 | Monolithic memories |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3735368A (enExample) |
| JP (1) | JPS5210613B1 (enExample) |
| AU (1) | AU458408B2 (enExample) |
| BE (1) | BE785380A (enExample) |
| BR (1) | BR7204117D0 (enExample) |
| CA (1) | CA960775A (enExample) |
| CH (1) | CH554052A (enExample) |
| FR (1) | FR2143342B1 (enExample) |
| GB (1) | GB1354849A (enExample) |
| IT (1) | IT950714B (enExample) |
| NL (1) | NL7207823A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2135485A (en) * | 1983-01-21 | 1984-08-30 | Hitachi Ltd | Semiconductor memory device |
| GB2291516A (en) * | 1995-03-28 | 1996-01-24 | Memory Corp Plc | Provision of write capability in partial memory systems |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1377859A (en) * | 1972-08-03 | 1974-12-18 | Catt I | Digital integrated circuits |
| US4044341A (en) * | 1976-03-22 | 1977-08-23 | Rca Corporation | Memory array |
| US4228528B2 (en) * | 1979-02-09 | 1992-10-06 | Memory with redundant rows and columns | |
| WO1982002793A1 (en) * | 1981-02-02 | 1982-08-19 | Otoole James E | Semiconductor memory redundant element identification circuit |
| US4430727A (en) * | 1981-11-10 | 1984-02-07 | International Business Machines Corp. | Storage element reconfiguration |
| US4922451A (en) * | 1987-03-23 | 1990-05-01 | International Business Machines Corporation | Memory re-mapping in a microcomputer system |
| US5031142A (en) * | 1989-02-10 | 1991-07-09 | Intel Corporation | Reset circuit for redundant memory using CAM cells |
| US5088066A (en) * | 1989-02-10 | 1992-02-11 | Intel Corporation | Redundancy decoding circuit using n-channel transistors |
| DE69033438T2 (de) | 1989-04-13 | 2000-07-06 | Sandisk Corp., Santa Clara | Austausch von fehlerhaften Speicherzellen einer EEprommatritze |
| US5051994A (en) * | 1989-04-28 | 1991-09-24 | International Business Machines Corporation | Computer memory module |
| EP0480966B1 (en) * | 1989-07-06 | 1996-05-15 | Mv Limited | A fault tolerant data storage system |
| US5128941A (en) * | 1989-12-20 | 1992-07-07 | Bull Hn Information Systems Inc. | Method of organizing a memory for fault tolerance |
| US4992984A (en) * | 1989-12-28 | 1991-02-12 | International Business Machines Corporation | Memory module utilizing partially defective memory chips |
| US5134616A (en) * | 1990-02-13 | 1992-07-28 | International Business Machines Corporation | Dynamic ram with on-chip ecc and optimized bit and word redundancy |
| GB9023867D0 (en) * | 1990-11-02 | 1990-12-12 | Mv Ltd | Improvements relating to a fault tolerant storage system |
| GB9305801D0 (en) * | 1993-03-19 | 1993-05-05 | Deans Alexander R | Semiconductor memory system |
| US6332183B1 (en) | 1998-03-05 | 2001-12-18 | Micron Technology, Inc. | Method for recovery of useful areas of partially defective synchronous memory components |
| US6314527B1 (en) | 1998-03-05 | 2001-11-06 | Micron Technology, Inc. | Recovery of useful areas of partially defective synchronous memory components |
| US6381708B1 (en) | 1998-04-28 | 2002-04-30 | Micron Technology, Inc. | Method for decoding addresses for a defective memory array |
| US6381707B1 (en) | 1998-04-28 | 2002-04-30 | Micron Technology, Inc. | System for decoding addresses for a defective memory array |
| US6496876B1 (en) | 1998-12-21 | 2002-12-17 | Micron Technology, Inc. | System and method for storing a tag to identify a functional storage location in a memory device |
| US7111190B2 (en) * | 2001-02-23 | 2006-09-19 | Intel Corporation | Method and apparatus for reconfigurable memory |
| US6578157B1 (en) | 2000-03-06 | 2003-06-10 | Micron Technology, Inc. | Method and apparatus for recovery of useful areas of partially defective direct rambus rimm components |
| US7269765B1 (en) | 2000-04-13 | 2007-09-11 | Micron Technology, Inc. | Method and apparatus for storing failing part locations in a module |
| KR102707649B1 (ko) * | 2016-12-22 | 2024-09-20 | 에스케이하이닉스 주식회사 | 에러 정정 코드 회로를 갖는 반도체 메모리 장치 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE620922A (enExample) * | 1961-08-08 | |||
| US3444526A (en) * | 1966-06-08 | 1969-05-13 | Ibm | Storage system using a storage device having defective storage locations |
| US3434116A (en) * | 1966-06-15 | 1969-03-18 | Ibm | Scheme for circumventing bad memory cells |
| US3588830A (en) * | 1968-01-17 | 1971-06-28 | Ibm | System for using a memory having irremediable bad bits |
-
1971
- 1971-06-25 US US00156637A patent/US3735368A/en not_active Expired - Lifetime
-
1972
- 1972-03-24 IT IT22326/72A patent/IT950714B/it active
- 1972-04-05 GB GB1556072A patent/GB1354849A/en not_active Expired
- 1972-04-19 JP JP47038804A patent/JPS5210613B1/ja active Pending
- 1972-06-09 NL NL7207823A patent/NL7207823A/xx not_active Application Discontinuation
- 1972-06-13 CH CH881772A patent/CH554052A/xx not_active IP Right Cessation
- 1972-06-20 FR FR7222688A patent/FR2143342B1/fr not_active Expired
- 1972-06-22 CA CA145,358A patent/CA960775A/en not_active Expired
- 1972-06-23 BR BR4117/72A patent/BR7204117D0/pt unknown
- 1972-06-23 BE BE785380A patent/BE785380A/xx unknown
- 1972-06-26 AU AU43907/72A patent/AU458408B2/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2135485A (en) * | 1983-01-21 | 1984-08-30 | Hitachi Ltd | Semiconductor memory device |
| US4656610A (en) * | 1983-01-21 | 1987-04-07 | Hitachi, Ltd. | Semiconductor memory device having redundancy means |
| GB2291516A (en) * | 1995-03-28 | 1996-01-24 | Memory Corp Plc | Provision of write capability in partial memory systems |
Also Published As
| Publication number | Publication date |
|---|---|
| IT950714B (it) | 1973-06-20 |
| CA960775A (en) | 1975-01-07 |
| DE2230759A1 (de) | 1973-01-11 |
| CH554052A (de) | 1974-09-13 |
| AU4390772A (en) | 1974-01-03 |
| JPS5210613B1 (enExample) | 1977-03-25 |
| BE785380A (fr) | 1972-10-16 |
| US3735368A (en) | 1973-05-22 |
| DE2230759B2 (de) | 1976-12-30 |
| AU458408B2 (en) | 1975-02-27 |
| NL7207823A (enExample) | 1972-12-28 |
| FR2143342A1 (enExample) | 1973-02-02 |
| BR7204117D0 (pt) | 1973-06-14 |
| FR2143342B1 (enExample) | 1978-03-03 |
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| US3897626A (en) | Method of manufacturing a full capacity monolithic memory utilizing defective storage cells | |
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| US11436079B2 (en) | Semiconductor memory devices having enhanced error correction circuits therein | |
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| JP3107240B2 (ja) | メモリモジュール及びその不良ビットテーブル設定方法 | |
| GB1315528A (en) | Data memory | |
| US4878220A (en) | Semiconductor memory device | |
| US4456980A (en) | Semiconductor memory device | |
| GB1311221A (en) | Data processing system stores | |
| EP0689695B1 (en) | Fault tolerant memory system | |
| DE3587145D1 (de) | Puffersystem mit erkennung von lese- oder schreibschaltungsfehlern. | |
| US4584682A (en) | Reconfigurable memory using both address permutation and spare memory elements | |
| US4562576A (en) | Data storage apparatus | |
| US3765001A (en) | Address translation logic which permits a monolithic memory to utilize defective storage cells | |
| JPS593799A (ja) | 稼動中に欠陥部を再配置できるメモリ・システム | |
| US4488298A (en) | Multi-bit error scattering arrangement to provide fault tolerant semiconductor static memories | |
| US4679196A (en) | Semiconductor memory device with a bit error detecting function | |
| US20250077346A1 (en) | Flash memory controller, operating method of flash memory controller, and storage device capable of performing different dimension error correction to protect data | |
| EP0424301A2 (en) | Overlapped data scrubbing with data refreshing | |
| JPS60167051A (ja) | 記憶装置 | |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |