GB1349574A - Stabilizing semiconductor devices - Google Patents

Stabilizing semiconductor devices

Info

Publication number
GB1349574A
GB1349574A GB2582071*A GB2582071A GB1349574A GB 1349574 A GB1349574 A GB 1349574A GB 2582071 A GB2582071 A GB 2582071A GB 1349574 A GB1349574 A GB 1349574A
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
stabilizing semiconductor
stabilizing
devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2582071*A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB1349574A publication Critical patent/GB1349574A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
GB2582071*A 1970-04-01 1971-04-19 Stabilizing semiconductor devices Expired GB1349574A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2462670A 1970-04-01 1970-04-01

Publications (1)

Publication Number Publication Date
GB1349574A true GB1349574A (en) 1974-04-03

Family

ID=21821569

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2582071*A Expired GB1349574A (en) 1970-04-01 1971-04-19 Stabilizing semiconductor devices

Country Status (5)

Country Link
US (1) US3627589A (enExample)
JP (1) JPS5336313B1 (enExample)
DE (1) DE2114566A1 (enExample)
FR (1) FR2085776B1 (enExample)
GB (1) GB1349574A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030457A3 (en) * 1979-12-05 1981-09-23 Vlsi Technology Research Association Method of manufacturing a semiconductor device and a semiconductor device manufactured by the method

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4144099A (en) * 1977-10-31 1979-03-13 International Business Machines Corporation High performance silicon wafer and fabrication process
US4140548A (en) * 1978-05-19 1979-02-20 Maruman Integrated Circuits Inc. MOS Semiconductor process utilizing a two-layer oxide forming technique
DE2932569C2 (de) * 1979-08-10 1983-04-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Reduzierung der Dichte der schnellen Oberflächenzustände bei MOS-Bauelementen
DE3170327D1 (en) * 1980-11-06 1985-06-05 Nat Res Dev Annealing process for a thin-film semiconductor device and obtained devices
US4784975A (en) * 1986-10-23 1988-11-15 International Business Machines Corporation Post-oxidation anneal of silicon dioxide
US5786231A (en) * 1995-12-05 1998-07-28 Sandia Corporation Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer
US5830575A (en) * 1996-09-16 1998-11-03 Sandia National Laboratories Memory device using movement of protons

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3472703A (en) * 1963-06-06 1969-10-14 Hitachi Ltd Method for producing semiconductor devices
US3453154A (en) * 1966-06-17 1969-07-01 Globe Union Inc Process for establishing low zener breakdown voltages in semiconductor regulators

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030457A3 (en) * 1979-12-05 1981-09-23 Vlsi Technology Research Association Method of manufacturing a semiconductor device and a semiconductor device manufactured by the method
US4376657A (en) 1979-12-05 1983-03-15 Vlsi Technology Research Association Method of making fault-free surface zone in semiconductor devices by step-wise heat treating

Also Published As

Publication number Publication date
FR2085776B1 (enExample) 1977-01-28
US3627589A (en) 1971-12-14
DE2114566A1 (de) 1971-10-21
FR2085776A1 (enExample) 1971-12-31
JPS5336313B1 (enExample) 1978-10-02

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees