FR2085776A1 - - Google Patents

Info

Publication number
FR2085776A1
FR2085776A1 FR7111581A FR7111581A FR2085776A1 FR 2085776 A1 FR2085776 A1 FR 2085776A1 FR 7111581 A FR7111581 A FR 7111581A FR 7111581 A FR7111581 A FR 7111581A FR 2085776 A1 FR2085776 A1 FR 2085776A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7111581A
Other languages
French (fr)
Other versions
FR2085776B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2085776A1 publication Critical patent/FR2085776A1/fr
Application granted granted Critical
Publication of FR2085776B1 publication Critical patent/FR2085776B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
FR7111581A 1970-04-01 1971-04-01 Expired FR2085776B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2462670A 1970-04-01 1970-04-01

Publications (2)

Publication Number Publication Date
FR2085776A1 true FR2085776A1 (enExample) 1971-12-31
FR2085776B1 FR2085776B1 (enExample) 1977-01-28

Family

ID=21821569

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7111581A Expired FR2085776B1 (enExample) 1970-04-01 1971-04-01

Country Status (5)

Country Link
US (1) US3627589A (enExample)
JP (1) JPS5336313B1 (enExample)
DE (1) DE2114566A1 (enExample)
FR (1) FR2085776B1 (enExample)
GB (1) GB1349574A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4144099A (en) * 1977-10-31 1979-03-13 International Business Machines Corporation High performance silicon wafer and fabrication process
US4140548A (en) * 1978-05-19 1979-02-20 Maruman Integrated Circuits Inc. MOS Semiconductor process utilizing a two-layer oxide forming technique
DE2932569C2 (de) * 1979-08-10 1983-04-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Reduzierung der Dichte der schnellen Oberflächenzustände bei MOS-Bauelementen
JPS5680139A (en) * 1979-12-05 1981-07-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
DE3170327D1 (en) * 1980-11-06 1985-06-05 Nat Res Dev Annealing process for a thin-film semiconductor device and obtained devices
US4784975A (en) * 1986-10-23 1988-11-15 International Business Machines Corporation Post-oxidation anneal of silicon dioxide
US5786231A (en) * 1995-12-05 1998-07-28 Sandia Corporation Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer
US5830575A (en) * 1996-09-16 1998-11-03 Sandia National Laboratories Memory device using movement of protons

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3472703A (en) * 1963-06-06 1969-10-14 Hitachi Ltd Method for producing semiconductor devices
US3453154A (en) * 1966-06-17 1969-07-01 Globe Union Inc Process for establishing low zener breakdown voltages in semiconductor regulators

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
FR2085776B1 (enExample) 1977-01-28
US3627589A (en) 1971-12-14
DE2114566A1 (de) 1971-10-21
GB1349574A (en) 1974-04-03
JPS5336313B1 (enExample) 1978-10-02

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Legal Events

Date Code Title Description
ST Notification of lapse