GB1349275A - Circuit arrangement for producing pulses - Google Patents

Circuit arrangement for producing pulses

Info

Publication number
GB1349275A
GB1349275A GB2553971*A GB2553971A GB1349275A GB 1349275 A GB1349275 A GB 1349275A GB 2553971 A GB2553971 A GB 2553971A GB 1349275 A GB1349275 A GB 1349275A
Authority
GB
United Kingdom
Prior art keywords
transistor
pulses
temperature
base
amplitude
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2553971*A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1349275A publication Critical patent/GB1349275A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/06—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element
    • G11C11/06007—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element using a single aperture or single magnetic closed circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Control Of Electrical Variables (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Amplifiers (AREA)
  • Logic Circuits (AREA)

Abstract

1349275 Transistor circuits; pulse amplitude modulation SIEMENS AG 19 April 1971 [25 March 1970] 25539/71 Headings H3T and H4L [Also in Division G1] In a circuit arrangement for producing current pulses of which the amplitude is dependent on the magnitude of a reference voltage, a series circuit comprises the emitter-collector path of a transistor 1 and first and second resistances 5 and 10 connected one on either side of the collectoremitter path, the second resistance 10 is lower in value than the first resistance 5 at least in the ratio 1 : 2, the base of the transistor 1 is connectable to a point of constant potential through a switching device 2 when the device 2 receives pulses and a further device 3, arranged to operate as a forward biased diode, is connected between the base of the transistor 1 and a point 8 for receiving the reference voltage and the further device 3 is arranged so that in operation the voltage across it varies with temperature in a similar manner to the base and emitter voltage of the transistor. Positive pulses applied at 9 to a transistor 2 cause the transistor 1 to conduct and produce current pulses i in the load 5. The amplitude of these pulses depends on the rereference voltage applied between 7 and 8. The current pulses i may be maintained constant independent of temperature or the amplitude of these pulses may be regulated depending on the temperature or depending on another quantity. Variations in the base-emitter voltage of the transistor 1 due to temperature are stabilized by a forward biased diode (6, Fig. 1, not shown) or as shown the emitter-base junction of a transistor 3 which is accommodated in the same housing as the transistor 1. As shown the amplitude of the current pulses i is regulated depending on temperature by a reference voltage obtained from a diode 12 which acts as a temperature responsive resistor. This circuit may be used as a current driver for providing inhibit current pulses to the inhibit line of a matrix store.
GB2553971*A 1970-03-25 1971-04-19 Circuit arrangement for producing pulses Expired GB1349275A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702014351 DE2014351A1 (en) 1970-03-25 1970-03-25 Circuit arrangement for regulating a current

Publications (1)

Publication Number Publication Date
GB1349275A true GB1349275A (en) 1974-04-03

Family

ID=5766250

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2553971*A Expired GB1349275A (en) 1970-03-25 1971-04-19 Circuit arrangement for producing pulses

Country Status (9)

Country Link
US (1) US3702946A (en)
AT (1) AT305434B (en)
BE (1) BE764531A (en)
CH (1) CH520446A (en)
DE (1) DE2014351A1 (en)
FR (1) FR2085030A5 (en)
GB (1) GB1349275A (en)
LU (1) LU62832A1 (en)
NL (1) NL7103807A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4160934A (en) * 1977-08-11 1979-07-10 Bell Telephone Laboratories, Incorporated Current control circuit for light emitting diode
JPS62130018A (en) * 1985-12-02 1987-06-12 Hitachi Ltd Semiconductor electronic circuit
DE3624586A1 (en) * 1986-07-21 1988-01-28 Siemens Ag Constant current source
DE4200681A1 (en) * 1992-01-14 1993-07-15 Bosch Gmbh Robert CIRCUIT ARRANGEMENT FOR UNDERVOLTAGE DETECTION

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR91357E (en) * 1964-03-04 1968-10-23
US3250922A (en) * 1964-06-12 1966-05-10 Hughes Aircraft Co Current driver for core memory apparatus
US3421102A (en) * 1965-06-10 1969-01-07 Tektronix Inc Direct coupled temperature compensated amplifier
US3518458A (en) * 1967-06-23 1970-06-30 Mallory & Co Inc P R Decoupling means for integrated circuit
US3532909A (en) * 1968-01-17 1970-10-06 Ibm Transistor logic scheme with current logic levels adapted for monolithic fabrication
US3534279A (en) * 1968-08-12 1970-10-13 Rca Corp High current transistor amplifier stage operable with low current biasing

Also Published As

Publication number Publication date
AT305434B (en) 1973-02-26
LU62832A1 (en) 1971-08-24
BE764531A (en) 1971-08-16
CH520446A (en) 1972-03-15
US3702946A (en) 1972-11-14
DE2014351A1 (en) 1971-11-11
FR2085030A5 (en) 1971-12-17
NL7103807A (en) 1971-09-28

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Legal Events

Date Code Title Description
CSNS Application of which complete specification have been accepted and published, but patent is not sealed