GB1344437A - Apparatus for the liquid-phase epitaxial growth of multilayer wafers - Google Patents

Apparatus for the liquid-phase epitaxial growth of multilayer wafers

Info

Publication number
GB1344437A
GB1344437A GB1028672A GB1028672A GB1344437A GB 1344437 A GB1344437 A GB 1344437A GB 1028672 A GB1028672 A GB 1028672A GB 1028672 A GB1028672 A GB 1028672A GB 1344437 A GB1344437 A GB 1344437A
Authority
GB
United Kingdom
Prior art keywords
boat
substrate
solution
gallium
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1028672A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1344437A publication Critical patent/GB1344437A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/062—Vertical dipping system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB1028672A 1971-03-05 1972-03-06 Apparatus for the liquid-phase epitaxial growth of multilayer wafers Expired GB1344437A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1206771A JPS53271B1 (xx) 1971-03-05 1971-03-05

Publications (1)

Publication Number Publication Date
GB1344437A true GB1344437A (en) 1974-01-23

Family

ID=11795240

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1028672A Expired GB1344437A (en) 1971-03-05 1972-03-06 Apparatus for the liquid-phase epitaxial growth of multilayer wafers

Country Status (6)

Country Link
US (1) US3783825A (xx)
JP (1) JPS53271B1 (xx)
CA (1) CA953618A (xx)
FR (1) FR2128642B1 (xx)
GB (1) GB1344437A (xx)
NL (1) NL7202844A (xx)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1414060A (en) * 1972-07-28 1975-11-12 Matsushita Electronics Corp Semoconductor devices
CH541353A (de) * 1972-11-20 1973-09-15 Ibm Vorrichtung zum epitaktischen Abscheiden von Halbleitermaterial durch Flüssigphasenepitaxie aus mindestens zwei Lösungen
JPS5213510B2 (xx) * 1973-02-26 1977-04-14
DE2346198A1 (de) * 1973-07-27 1975-05-07 Siemens Ag Verfahren zur herstellung gelb leuchtender galliumphosphid-dioden
US4012242A (en) * 1973-11-14 1977-03-15 International Rectifier Corporation Liquid epitaxy technique
JPS50119566A (xx) * 1974-03-01 1975-09-19
US3963536A (en) * 1974-11-18 1976-06-15 Rca Corporation Method of making electroluminescent semiconductor devices
FR2296264A1 (fr) * 1974-12-24 1976-07-23 Radiotechnique Compelec Procede de realisation de dispositif semi-conducteur a heterojonction
US4052252A (en) * 1975-04-04 1977-10-04 Rca Corporation Liquid phase epitaxial growth with interfacial temperature difference
DE2553113C3 (de) * 1975-11-26 1982-04-08 Philips Patentverwaltung Gmbh, 2000 Hamburg Vorrichtung zum Züchten von Einkristallen aus schmelzflüssigen Lösungen
DE2653049C3 (de) * 1976-11-23 1979-10-04 Philips Patentverwaltung Gmbh, 2000 Hamburg Vorrichtung zur Flüssigphasenepitaxie
DE2847091C3 (de) * 1978-10-28 1982-03-25 Siemens AG, 1000 Berlin und 8000 München Verfahren und Vorrichtung zur Herstellung von Ga↓1↓-↓x↓Al↓x↓ AS:Si-Epitaxieschichten
US4236947A (en) * 1979-05-21 1980-12-02 General Electric Company Fabrication of grown-in p-n junctions using liquid phase epitaxial growth of silicon
US4214550A (en) * 1979-05-21 1980-07-29 Rca Corporation Apparatus for the deposition of a material from a liquid phase
FR2470810A1 (fr) * 1979-12-07 1981-06-12 Labo Electronique Physique Procede de fabrication de structures semi-conductrices par croissance epitaxiale en phase liquide et structures obtenues
US4384398A (en) * 1981-10-26 1983-05-24 Bell Telephone Laboratories, Incorporated Elimination of silicon pyramids from epitaxial crystals of GaAs and GaAlAs
DE3628673A1 (de) * 1986-08-23 1988-03-03 Hans J Scheel Verfahren und vorrichtung zum beschichten von substraten mit mehreren schichten
US5264190A (en) * 1990-04-19 1993-11-23 Mitsubishi Denki Kabushiki Kaisha Liquid phase epitaxial film growth apparatus
US5098867A (en) * 1990-11-13 1992-03-24 Samsung Electronics Co., Ltd. Heat treatment for compound semiconductor wafer
JP3007202B2 (ja) * 1991-09-12 2000-02-07 日新製鋼株式会社 多層エピタキシャル成長結晶の製造方法及び製造装置
US7233517B2 (en) * 2002-10-15 2007-06-19 Nanochip, Inc. Atomic probes and media for high density data storage
US20050243592A1 (en) * 2004-04-16 2005-11-03 Rust Thomas F High density data storage device having eraseable bit cells
US20060291271A1 (en) * 2005-06-24 2006-12-28 Nanochip, Inc. High density data storage devices having servo indicia formed in a patterned media
US20070008867A1 (en) * 2005-07-08 2007-01-11 Nanochip, Inc. High density data storage devices with a lubricant layer comprised of a field of polymer chains
US20070008865A1 (en) * 2005-07-08 2007-01-11 Nanochip, Inc. High density data storage devices with polarity-dependent memory switching media
US20070290282A1 (en) * 2006-06-15 2007-12-20 Nanochip, Inc. Bonded chip assembly with a micro-mover for microelectromechanical systems
US20080001075A1 (en) * 2006-06-15 2008-01-03 Nanochip, Inc. Memory stage for a probe storage device
US20070291623A1 (en) * 2006-06-15 2007-12-20 Nanochip, Inc. Cantilever with control of vertical and lateral position of contact probe tip
US20080074792A1 (en) * 2006-09-21 2008-03-27 Nanochip, Inc. Control scheme for a memory device
US20080074984A1 (en) * 2006-09-21 2008-03-27 Nanochip, Inc. Architecture for a Memory Device
US20080175033A1 (en) * 2007-01-19 2008-07-24 Nanochip, Inc. Method and system for improving domain stability in a ferroelectric media
US20080174918A1 (en) * 2007-01-19 2008-07-24 Nanochip, Inc. Method and system for writing and reading a charge-trap media with a probe tip
US20080233672A1 (en) * 2007-03-20 2008-09-25 Nanochip, Inc. Method of integrating mems structures and cmos structures using oxide fusion bonding
US20080232228A1 (en) * 2007-03-20 2008-09-25 Nanochip, Inc. Systems and methods of writing and reading a ferro-electric media with a probe tip
US20080316897A1 (en) * 2007-06-19 2008-12-25 Nanochip, Inc. Methods of treating a surface of a ferroelectric media
US20080318086A1 (en) * 2007-06-19 2008-12-25 Nanochip, Inc. Surface-treated ferroelectric media for use in systems for storing information
US7626846B2 (en) * 2007-07-16 2009-12-01 Nanochip, Inc. Method and media for improving ferroelectric domain stability in an information storage device
US20090201015A1 (en) * 2008-02-12 2009-08-13 Nanochip, Inc. Method and device for detecting ferroelectric polarization
US20090213492A1 (en) * 2008-02-22 2009-08-27 Nanochip, Inc. Method of improving stability of domain polarization in ferroelectric thin films
US20090294028A1 (en) * 2008-06-03 2009-12-03 Nanochip, Inc. Process for fabricating high density storage device with high-temperature media
US20100002563A1 (en) * 2008-07-01 2010-01-07 Nanochip, Inc. Media with tetragonally-strained recording layer having improved surface roughness
US20100039919A1 (en) * 2008-08-15 2010-02-18 Nanochip, Inc. Cantilever Structure for Use in Seek-and-Scan Probe Storage
US20100068509A1 (en) * 2008-09-17 2010-03-18 Nanochip, Inc. Media having improved surface smoothness and methods for making the same
US20100085863A1 (en) * 2008-10-07 2010-04-08 Nanochip, Inc. Retuning of ferroelectric media built-in-bias

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1248999A (en) * 1968-09-27 1971-10-06 Matsushita Electric Ind Co Ltd Apparatus for epitaxial growth from the liquid state
US3565702A (en) * 1969-02-14 1971-02-23 Rca Corp Depositing successive epitaxial semiconductive layers from the liquid phase
NL6916855A (xx) * 1969-02-19 1970-08-21
US3665888A (en) * 1970-03-16 1972-05-30 Bell Telephone Labor Inc Horizontal liquid phase crystal growth apparatus
US3697330A (en) * 1970-03-27 1972-10-10 Sperry Rand Corp Liquid epitaxy method and apparatus
US3677228A (en) * 1970-04-17 1972-07-18 Bell Telephone Labor Inc Crystal growth apparatus

Also Published As

Publication number Publication date
NL7202844A (xx) 1972-09-07
DE2210371B2 (de) 1975-06-05
JPS53271B1 (xx) 1978-01-06
FR2128642B1 (xx) 1974-09-13
US3783825A (en) 1974-01-08
CA953618A (en) 1974-08-27
FR2128642A1 (xx) 1972-10-20
DE2210371A1 (de) 1972-10-05

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PE20 Patent expired after termination of 20 years