GB1342487A - Electrical connectors - Google Patents

Electrical connectors

Info

Publication number
GB1342487A
GB1342487A GB2902673A GB2902670A GB1342487A GB 1342487 A GB1342487 A GB 1342487A GB 2902673 A GB2902673 A GB 2902673A GB 2902670 A GB2902670 A GB 2902670A GB 1342487 A GB1342487 A GB 1342487A
Authority
GB
United Kingdom
Prior art keywords
substrate
film
anodizable material
oct
anodizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2902673A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8535869A external-priority patent/JPS5123854B1/ja
Priority claimed from JP8707269A external-priority patent/JPS5754942B1/ja
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Publication of GB1342487A publication Critical patent/GB1342487A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/022—Anodisation on selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB2902673A 1969-10-25 1970-10-23 Electrical connectors Expired GB1342487A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8535869A JPS5123854B1 (https=) 1969-10-25 1969-10-25
JP8707269A JPS5754942B1 (https=) 1969-10-30 1969-10-30

Publications (1)

Publication Number Publication Date
GB1342487A true GB1342487A (en) 1974-01-03

Family

ID=26426376

Family Applications (2)

Application Number Title Priority Date Filing Date
GB2902673A Expired GB1342487A (en) 1969-10-25 1970-10-23 Electrical connectors
GB5048370A Expired GB1342486A (en) 1969-10-25 1970-10-23 Electrical connections

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB5048370A Expired GB1342486A (en) 1969-10-25 1970-10-23 Electrical connections

Country Status (7)

Country Link
US (1) US3741880A (https=)
DE (2) DE2052424C3 (https=)
FR (1) FR2066471A5 (https=)
GB (2) GB1342487A (https=)
HK (2) HK28876A (https=)
MY (2) MY7600037A (https=)
NL (1) NL172388B (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3939047A (en) * 1971-11-15 1976-02-17 Nippon Electric Co., Ltd. Method for fabricating electrode structure for a semiconductor device having a shallow junction
US3827949A (en) * 1972-03-29 1974-08-06 Ibm Anodic oxide passivated planar aluminum metallurgy system and method of producing
JPS557019B2 (https=) * 1972-05-10 1980-02-21
JPS4995591A (https=) * 1973-01-12 1974-09-10
JPS4995592A (https=) * 1973-01-12 1974-09-10
US3864217A (en) * 1974-01-21 1975-02-04 Nippon Electric Co Method of fabricating a semiconductor device
US3918148A (en) * 1974-04-15 1975-11-11 Ibm Integrated circuit chip carrier and method for forming the same
US3882000A (en) * 1974-05-09 1975-05-06 Bell Telephone Labor Inc Formation of composite oxides on III-V semiconductors
FR2285716A1 (fr) * 1974-09-18 1976-04-16 Radiotechnique Compelec Procede pour la fabrication d'un dispositif semi-conducteur comportant une configuration de conducteurs et dispositif fabrique par ce procede
US3971710A (en) * 1974-11-29 1976-07-27 Ibm Anodized articles and process of preparing same
US4056681A (en) * 1975-08-04 1977-11-01 International Telephone And Telegraph Corporation Self-aligning package for integrated circuits
US4045302A (en) * 1976-07-08 1977-08-30 Burroughs Corporation Multilevel metallization process
US4158613A (en) * 1978-12-04 1979-06-19 Burroughs Corporation Method of forming a metal interconnect structure for integrated circuits
US4161430A (en) * 1978-12-04 1979-07-17 Burroughs Corporation Method of forming integrated circuit metal interconnect structure employing molybdenum on aluminum
DE2902665A1 (de) * 1979-01-24 1980-08-07 Siemens Ag Verfahren zum herstellen von integrierten mos-schaltungen in silizium-gate- technologie
FR2510307A1 (fr) * 1981-07-24 1983-01-28 Hitachi Ltd Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif
US4517616A (en) * 1982-04-12 1985-05-14 Memorex Corporation Thin film magnetic recording transducer having embedded pole piece design
US4391849A (en) * 1982-04-12 1983-07-05 Memorex Corporation Metal oxide patterns with planar surface
JPS60132353A (ja) * 1983-12-20 1985-07-15 Mitsubishi Electric Corp 半導体装置の製造方法
US4936957A (en) * 1988-03-28 1990-06-26 The United States Of America As Represented By The Secretary Of The Air Force Thin film oxide dielectric structure and method
US5141603A (en) * 1988-03-28 1992-08-25 The United States Of America As Represented By The Secretary Of The Air Force Capacitor method for improved oxide dielectric
US5098860A (en) * 1990-05-07 1992-03-24 The Boeing Company Method of fabricating high-density interconnect structures having tantalum/tantalum oxide layers
LT4425B (lt) 1995-04-28 1998-12-28 Monika Paszkowska Termodinaminis aspiracinis vožtuvas
JP4882229B2 (ja) * 2004-09-08 2012-02-22 株式会社デンソー 半導体装置およびその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1048424A (en) * 1963-08-28 1966-11-16 Int Standard Electric Corp Improvements in or relating to semiconductor devices
US3337426A (en) 1964-06-04 1967-08-22 Gen Dynamics Corp Process for fabricating electrical circuits

Also Published As

Publication number Publication date
FR2066471A5 (https=) 1971-08-06
US3741880A (en) 1973-06-26
DE2052424B2 (de) 1979-03-22
DE2052424A1 (de) 1971-09-30
NL172388B (nl) 1983-03-16
HK28876A (en) 1976-05-28
DE2052424C3 (de) 1979-11-15
GB1342486A (en) 1974-01-03
MY7600038A (en) 1976-12-31
HK28976A (en) 1976-05-28
NL7015610A (https=) 1971-04-27
DE2066108C2 (de) 1985-04-04
MY7600037A (en) 1976-12-31

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years