GB1340653A - Fet read-only storage matrix - Google Patents
Fet read-only storage matrixInfo
- Publication number
- GB1340653A GB1340653A GB2434572A GB2434572A GB1340653A GB 1340653 A GB1340653 A GB 1340653A GB 2434572 A GB2434572 A GB 2434572A GB 2434572 A GB2434572 A GB 2434572A GB 1340653 A GB1340653 A GB 1340653A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- constituting
- substrate
- read
- strips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011159 matrix material Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19712128014 DE2128014A1 (de) | 1971-06-05 | 1971-06-05 | Halbleiterfestwertspeicher |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1340653A true GB1340653A (en) | 1973-12-12 |
Family
ID=5809957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2434572A Expired GB1340653A (en) | 1971-06-05 | 1972-05-24 | Fet read-only storage matrix |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE2128014A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2140542A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1340653A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2270795A (en) * | 1992-09-18 | 1994-03-23 | Texas Instruments Ltd | Trimming integrated circuits |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1456608A (en) * | 1973-08-23 | 1976-11-24 | Ibm | Read only memory |
| US4507757A (en) * | 1982-03-23 | 1985-03-26 | Texas Instruments Incorporated | Avalanche fuse element in programmable memory |
| US4507756A (en) * | 1982-03-23 | 1985-03-26 | Texas Instruments Incorporated | Avalanche fuse element as programmable device |
-
1971
- 1971-06-05 DE DE19712128014 patent/DE2128014A1/de active Granted
-
1972
- 1972-05-24 GB GB2434572A patent/GB1340653A/en not_active Expired
- 1972-06-01 FR FR7220515A patent/FR2140542A1/fr not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2270795A (en) * | 1992-09-18 | 1994-03-23 | Texas Instruments Ltd | Trimming integrated circuits |
| GB2270795B (en) * | 1992-09-18 | 1995-02-15 | Texas Instruments Ltd | Improvements in or relating to the trimming of integrated circuits |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2128014B2 (enrdf_load_stackoverflow) | 1978-10-05 |
| DE2128014A1 (de) | 1972-12-14 |
| DE2128014C3 (enrdf_load_stackoverflow) | 1979-05-31 |
| FR2140542A1 (enrdf_load_stackoverflow) | 1973-01-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4385308A (en) | Non-volatile semiconductor memory device | |
| US4476547A (en) | DRAM with interleaved folded bit lines | |
| US4319342A (en) | One device field effect transistor (FET) AC stable random access memory (RAM) array | |
| US4513397A (en) | Electrically alterable, nonvolatile floating gate memory device | |
| GB1496119A (en) | Integrated semiconductor structure | |
| GB1485138A (en) | Field-effect transistors | |
| EP0085550A3 (en) | Electrically-programmable and electrically-erasable mos memory device | |
| US4240845A (en) | Method of fabricating random access memory device | |
| GB1535615A (en) | Semiconductor devices | |
| GB1480940A (en) | Memory cell | |
| GB1322990A (en) | Integrated circuit devices | |
| US4978635A (en) | Method of making a semiconductor memory device | |
| GB1383981A (en) | Electrically alterable floating gate device and method for altering same | |
| GB1340653A (en) | Fet read-only storage matrix | |
| US4618876A (en) | Electrically alterable, nonvolatile floating gate memory device | |
| JPS5718356A (en) | Semiconductor memory storage | |
| US4080590A (en) | Capacitor storage memory | |
| US4219834A (en) | One-device monolithic random access memory and method of fabricating same | |
| US4014036A (en) | Single-electrode charge-coupled random access memory cell | |
| GB1466007A (en) | Data storage apparatus employing variable threshold field effect semiconductor devices | |
| GB1502334A (en) | Semiconductor data storage arrangements | |
| GB1422586A (en) | Integrated circuits | |
| US4984199A (en) | Semiconductor memory cells having common contact hole | |
| GB2006523A (en) | Dynamic RAM memory and vertical charge coupled dynamic storage cell therefor | |
| JPS55150267A (en) | Semiconductor memory cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |