GB1339384A - Method for the manufacturing of a semiconductor device - Google Patents
Method for the manufacturing of a semiconductor deviceInfo
- Publication number
- GB1339384A GB1339384A GB3623272A GB3623272A GB1339384A GB 1339384 A GB1339384 A GB 1339384A GB 3623272 A GB3623272 A GB 3623272A GB 3623272 A GB3623272 A GB 3623272A GB 1339384 A GB1339384 A GB 1339384A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrode
- layer
- silicon
- aug
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 238000012216 screening Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2139631A DE2139631C3 (de) | 1971-08-07 | 1971-08-07 | Verfahren zum Herstellen eines Halbleiterbauelements, bei dem der Rand einer Diffusionszone auf den Rand einer polykristallinen Siliciumelektrode ausgerichtet ist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1339384A true GB1339384A (en) | 1973-12-05 |
Family
ID=5816091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3623272A Expired GB1339384A (en) | 1971-08-07 | 1972-08-03 | Method for the manufacturing of a semiconductor device |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS4829370A (it) |
| AU (1) | AU4513372A (it) |
| DE (1) | DE2139631C3 (it) |
| FR (1) | FR2148439B1 (it) |
| GB (1) | GB1339384A (it) |
| IT (1) | IT963314B (it) |
| ZA (1) | ZA724729B (it) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5131255B1 (it) * | 1971-02-27 | 1976-09-06 | ||
| GB1540450A (en) * | 1975-10-29 | 1979-02-14 | Intel Corp | Self-aligning double polycrystalline silicon etching process |
| JPS56130497A (en) * | 1980-03-19 | 1981-10-13 | Toyota Motor Corp | Formation of pattern or the like utilizing electro-deposition coating |
| US4318759A (en) * | 1980-07-21 | 1982-03-09 | Data General Corporation | Retro-etch process for integrated circuits |
| JPS6137998A (ja) * | 1984-07-27 | 1986-02-22 | Seiko Instr & Electronics Ltd | 時計文字板の製造方法 |
-
1971
- 1971-08-07 DE DE2139631A patent/DE2139631C3/de not_active Expired
-
1972
- 1972-07-11 ZA ZA724729A patent/ZA724729B/xx unknown
- 1972-07-25 IT IT27361/72A patent/IT963314B/it active
- 1972-07-27 FR FR7227021A patent/FR2148439B1/fr not_active Expired
- 1972-07-31 AU AU45133/72A patent/AU4513372A/en not_active Expired
- 1972-08-03 GB GB3623272A patent/GB1339384A/en not_active Expired
- 1972-08-07 JP JP47079014A patent/JPS4829370A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2139631A1 (de) | 1973-03-01 |
| FR2148439A1 (it) | 1973-03-23 |
| ZA724729B (en) | 1973-04-25 |
| DE2139631C3 (de) | 1979-05-10 |
| FR2148439B1 (it) | 1976-03-12 |
| IT963314B (it) | 1974-01-10 |
| JPS4829370A (it) | 1973-04-18 |
| DE2139631B2 (de) | 1978-08-31 |
| AU4513372A (en) | 1974-02-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |